• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.671-674
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• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.24-27
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• 2008

For the development of superconducting fault current limiters(SFCLs) having large current capacity, we fabricated an SFCL element that consists of Bi-2212 superconductor and Cu-Ni alloy tubes. First, Ag was plated on the surface of the Bi-2212 for the enhancement of soldering process. On the Ag-plated Bi-2212 tube, a Cu-Ni alloy tube was soldered using optimized solders and soldering conditions. The BSCCO/Cu-Ni composite was processed mechanically to have a helical shape for the improvement of the SFCL characteristics. The total current path of the SFCL element was 1330 mm long with 12 turns, and had critical current of 340 A at 77 K. Finally, we carried out the fault test using the fabricated SFCL element. It showed successful current limiting performance under the fault condition of 50 $V_{rms}$ and 5.5 kA. From the results, the rated voltage of the SFCL element was decided to be 0.4 V/cm, and the power capacity was 12 kVA at 77 K. The fabrication process of the SFCL and the fault test results will be presented.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.538-541
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• 2003

BSCCO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cases, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and PO$_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.397-400
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• 1999

We have fabricated BSCCO 2223 by modified two powder process and investigated 2223 phase formation and grain growth. Phase evolution and reactivity of 2223 were remarkably sensitive to size of 2212 grains and liquid phase. Larger size of 2212 phase increased liquid formation temperature. The Avrami relation was well suited for describing the kinetics of grain growth in BSCCO 2223.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.173-177
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• 2002

High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCOphases with T$\sub$sub/ and pO$_3$ are established in the 2212 and 2223 phases come out as stable phases depending on T$\sub$sub/ and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs\` free energy change for single Bi2212 or Bi2223 phase, were performed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.300-303
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• 2001

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.78-78
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• 2008

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.536-539
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• 2007

BSCCO am films fabricated by using the evaporation method at various substrate temperatures, Tsub and ozone gas pressures $PO_3$. Despite setting the composition of thin film Bi2223, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature. This demonstrates the existence of mixed crystal composition where the phases of Bi2201, Bi2212 and Bi2223 are mixed in the crystal structure; and the single-phase film of each phase exist in a very rezone of temperature and gas pressure.

• Progress in Superconductivity
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• v.8 no.1
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• pp.108-112
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• 2006

We fabricated Bi-2212/$SrSO_4$ bulk superconductors by the casting process and evaluated the effects of the powder mixing method and annealing temperature on the texture, microstructure, and critical current. In the process, the Bi-2212 powders were mixed with $SrSO_4$ by hand-mixing(HM) and planetary ball milling(PBM) method and then the powder mixtures were melted at $1100^{\circ}C{\sim}1200^{\circ}C$, solidified, and annealed. We observed that the rod made by the PBM had a more homogeneous microstructure and smaller $SrSO_4$ and second phases than that of the rod made by the HM, resulting in increased $I_c$. The $I_c$ of the rod also depended on the annealing temperature and the highest $I_c$ was obtained to be 200 A when prepared by HM at $1200^{\circ}C$ and annealed at $810^{\circ}C$ which is probably due to the moderate density and 2212 texture and the smaller and less second phase compared to that at higher temperature. The possible causes of the variations of $I_c$ with the powder mixing method and annealing temperature were related to the microstructural evolution based on the SEM, EPMA, and DTA analyses.