• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.27-30
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• 2007

The gigahertz oscillator behavior of double-walled boron-nitride nanotube (BNNT) was investigated by using classical molecular dynamics simulations. The BNNT oscillator characteristics were compared to carbon-nanotube (CNT) and hybrid-C@BNNT oscillators. The results show that the BNNT oscillators are higher than the van der Waals force of the CNT oscillator. Since the frictional effects of BNNT oscillators are higher than that of a CNT oscillator, the damping factors of BNNT and hybrid oscillators are higher than that of a CNT oscillator.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.23-25
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.59-62
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• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds. The instability of the 4-88-4 defect generates the structural transformation into BNNTs with no defect at about 1500 K.

• Journal of the Korean Magnetics Society
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• v.19 no.2
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• pp.43-46
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• 2009

The magnetic and structural properties of the (8, 0) BN nanotubes with transition metals (TM) of Fe, Co, or Ni substitution for B or N were investigated using a first-principles calculation. It was found that TM substitution makes the cross section being distorted and the bond length TM-B or TM-N being longer than that of the original B-N one. The magnetic moment is larger for the TM substitution for B than one for N, and it is mainly due to the 3d electrons of TM atoms.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Journal of Powder Materials
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• v.25 no.2
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• pp.120-125
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• 2018

Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.