• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.639-644
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• 1988

The physical and dielectric properties of complex perovskite compound Sr(Mg1/3Nb1/3)O3-Ba(Mg1/3Nb2/3)O3-Ba(Mg1/3Ta2/3)O3(BMT) system were investigated as a function of composition. As the mole ratio of BMN was increased, lattice parameter ratio c/a was slightly increased, and density was increased in SMN-BMN system. However, in BMN-BMT system, lattice parameter ratio c/a and density were decreased with increasing the mole ratio of BMN. Dielectric constant, dielectric loss at $25^{\circ}C$ and 100kHz, and temperature coefficient of resonant frequency, the dependence of temperature in capacitance were increased with increasing the mole ratio of BMN in SMN-BMN-BMT system. These result can be explained according to the degree of order=disorder and dielectric constant.

• Tunnel and Underground Space
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• v.29 no.6
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• pp.367-378
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• 2019

As the development of IT technology, the way to manage the underground construction site in real time using wireless network communication is being considered. Underground space is limited area compared to the ground site due to the enclosed communication environment and spatial characteristics. BMN (Bluetooth Mesh Networking) technology is a recently introduced wireless communication technology that bluetooth device acts as a repeater to form a networking mesh and monitor individual devices. This article examines the areas to be considered for analyzing the applicability of BMN technology to underground spaces, and the cases studies of wireless communication monitoring systems currently being developed. And the BMN technology which is being developed for the underground application is also introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.208-211
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• 2000

Ba(Mg$_{1}$3/$Nb_{2/3}$)O$_3$ powders were synthesised from mechanochemically treated mixtures of Ba(OH)$_2$. 8$H_2O$, MgO and Nb$_2$O$_{5}$. Perovskite BMN powder of nanosized particles was successfully synthesized by using mechanochemical methods. Density and dielectric constant of samples with mechanochemical methods showed higher values than those of conventional processing.ng.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.153-156
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• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1000-1004
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• 1996

A random walk simulation was used to determine the triplet exciton density and annihilation rate for a two dimensional lattice of naphthalene choleic acid with small amount of β-methylnaphthalene (BMN). The results demonstrate that energy transfer efficiency (α) increases as density increases and the annihilation begins to become significant at triplet exciton densities higher then 10-3/sites. Another simulation was carried out to determine annihilation rate and unimolecular decay rate in the absence of BMN. The results indicate that the annihilation rate is equal to the unimolecular decay rate at the density of 1.2×10-3/sites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.478-484
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• 2000

The structural changes and the microwave dielectric properties of $Ba_{1-x}$/A$_{x}$/(Mg$_{1}$3//Nb$_{2}$3/)O$_3$(A=Sr, Ca=x0, 0.2, 0.4, 0.6, 0.8, 1.0) were investigated. The densities of samples are gradually decreased with increasing x(BMN=6.1, SMN=5.22 and CMN=4.26 g/m$^3$)The crystal structure of BMN was untilting of oxygen octahedral. The structural changes of BSMN showed the antiphase tilting at x>0.4, and those of BCMN showed the antiphase tilting at 0.20.8. The variation of dielectric constant with Sr was small(BMN=32, SMN=30) However the variation with Ca was large the highest value was 42 at Ca=0.2(CMN=25) The maximum quality factor was 68,000 GHz at Sr=0.2 and the minimum quality factor was 3,000 GHz at Ca=0.2 (BMN=35,000, SMN=20,000 and CMN=23,000 GHz) The temperature coefficients of resonant frequency of BSMN were about 2 times larger than those of BCMN in all composition.ion.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.105-107
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• 1988

The dielectric properties of complex perovskite compound Sr$(Mg_{1/3}Mb_{2/3})$$O_3$-Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$(BMN) system were investigated as a function of composition and sintering time. In the case of the specimens sintered at $1650^{\circ}C$ for same time, dielectric constant and dielectric loss were increased with increasing the mole ratio of BMN. The maximum temperature coefficient of resonant frequency was found in composition Ba$(Mg_{{1/3}Nb_{2/3})$$O_3$. In the case of the specimens with same composition, dielectric constant and dielectric loss were slightly increased with increasing the sintering time. As the sintering time was increased, the temperature coefficient of resonant frequency for SMN was slightly increased, however, that of BMN and ($Sr_{1/2}Ba_{1/2}$) ($Mg_{1/3}Ta_{2/3}$)$O_3$ was largely depended on sintering time.