• Title/Summary/Keyword: BH

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Nonlinear digital position control of brushless DC motors for direct drive robot (브러쉬없는 직류전동기의 비선형 디지탈 위치제어)

  • 홍기철;남광희
    • 제어로봇시스템학회:학술대회논문집
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    • 1990.10a
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    • pp.252-257
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    • 1990
  • For the position control of BL-DC motors, 2.phi.-3.phi. conversion unit, hysteresis band device, and PWM pulse generation are required. By utilizing a single-chip processor INTEL 8097BH, we cover all required functions. As a result, no analogue device is employed in this control scheme, so that it makes BL-DC motor controller simple and flexible. Furthermore, the single-chip processor is utilized for the nonlinear coordinate transformation which is necessary for the linearization of the motor system.

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Semicontinuous Production of Red Pigment by Immobilized Cells of Bacillus sp BH-99 Using Column Bioreactor

  • Ryu, Beung-Ho
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.8 no.1
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    • pp.19-22
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    • 2003
  • The semicontinuous production of red pigment by immobilized cells of Bacillus sp. B H-99 was investigated in comparison with free cells. The red pigment produced highest productivity under the conditions of aeration of 0.2 mL/min and 2 mm diameter of gel beads by using 3.0% sodium alginate. Semicontinuous production by immobilized cells showed the highest productivity with replacement of fresh production medium in every 72 h for fourth fermentation cycle following the conditions of red pigment productivity.

On the Characteristics of a Full Bridge Inverter with low Pass LC Filter (저역통과 LC필터를 가진 전브리지형 인버터의 특성에 관하여)

  • Park, J.G.;Chung, J.Y.;Nam, T.K.;Roh, Y.O.
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.342-344
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    • 1994
  • In this paper, the dynamic characteristics of the existing filter is analyzed to obtain a sinewave current from full bridge inverter with low pass LC filter. The Chevshev's filter, which is most typical low pass filter, is adopted for this investigation and driven controller of full bridge inverter used EV8097BH one-chi p controller.

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Identification of Bak-like Protein cDNA (Bak-like 단백질을 code하는 cDNA의 동정)

  • 김진경
    • YAKHAK HOEJI
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    • v.45 no.4
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    • pp.426-430
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    • 2001
  • Cells are eliminated in a variety of physiological settings by apoptosis, a genetically encoded process of cellular suicide. Bak, a member of the Bcl-2 protein family, accelerates apoptosis by an unknown mechanism. We have found a novel cDNA encoding a 101 amino acid protein possessing a Bak-like in our full-length cDNA bank. Bak-like shares the conserved domains BHI and 2 with other proapoptotic proteins but lacks the BH3 domain. Bak-like is expressed in a wide variety of tissues. Like Bak, Bak-like gene product primarily enhances apoptotic cell death following an appropriate stimulus.

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Mild and Efficient Reduction of α,β-Unsaturated Carbonyl Compounds, α-Diketones and Acyloins with Sodium Borohydride/Dowex1-x8 System

  • Zeynizadeh, Behzad;Shirini, Farhad
    • Bulletin of the Korean Chemical Society
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    • v.24 no.3
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    • pp.295-298
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    • 2003
  • α,β-Unsaturated aldehydes and ketones are regioselectively reduced to the corresponding allylic alcohols with /Dowex1-x8 system in THF at room temperature. This system is also efficient for the conversion of α-diketones and acyloins to the vicinal diols in refluxing THF.

An Analysis of the Kink in BH Laser Diodes Based on the Spatial Hole Burning Model (Spatial Hole Burning 모델에 기초한 매립형 Laser Diode의 Kink에 대한 연구)

  • 임종형;한영수;김상배
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.6
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    • pp.134-142
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    • 1994
  • A kink due to the lasing of the first transverse mode in laser diodes is investigated using rate equations based on the spatial hole burning model. An analytic expression for the kink power is derived and the result agrees well with experimental results. It is also shown that the position of a kink can be identified in the electrical derivative characteristics as well as in light output vs, current characteristics.

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나노선 구조를 갖는 쇼트키 장벽 MOSFET과 MOSFET의 특성 비교

  • Jeong, Hyo-Eun;Lee, Jae-Hyeon
    • Proceeding of EDISON Challenge
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    • 2013.04a
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    • pp.234-237
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    • 2013
  • 본 논문에서는 실리콘 나노선 구조를 갖는 모스펫 (Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs)과 쇼트키 장벽 트랜지스터 (Schottky-Barrier(SB) MOSFETs, SB-MOSFETs)의 전기적인 특성을 양자역학적 시뮬레이션 계산을 통해 비교하였다. 쇼트키 장벽 높이 (Schottky Barrier, ${\phi}_{SBH}$)에 따른 SB-MOSFETs의 터널링 특성을 분석하고, 소스/드레인 (S/D) 길이가 변함에 따라 달라지는 S/D 저항을 계산하여, ${\phi}_{SBH}$가 0eV인 SB-MOSFETs의 On과 Off $I_D$ 비율 ($I_{ON}/I_{OFF}$)이 MOSFETs보다 개선될 수 있음을 보였다.

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