• Title/Summary/Keyword: BGR

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Nutritional and antioxidative properties of black goat meat cuts

  • Kim, Hye-Jin;Kim, Hee-Jin;Jang, Aera
    • Asian-Australasian Journal of Animal Sciences
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    • v.32 no.9
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    • pp.1423-1429
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    • 2019
  • Objective: In this study, we evaluated the nutritional value and antioxidant activity of black goat loin (BGL) and black goat rump (BGR) meat. Methods: We evaluated the proximate compositions, collagen and mineral contents, and fatty acid compositions of BGL and BGR with respect to their nutritional value. The levels of bioactive compounds such as L-carnitine, creatine, creatinine, carnosine, and anserine were also measured. The ferric reducing antioxidant power (FRAP), 2,2-azinobis (3-ethylbenzothiazoline-6-sulfonic acid) (ABTS) radical scavenging, and oxygen radical absorption capacity (ORAC) were assessed to evaluate the antioxidant activity of BGL and BGR. Results: BGR showed higher collagen, Fe, Ca, P, and Na contents than did BGL (p<0.05). Notably, the Ca/P ratio was high in both BGR and BGL (1.82 and 1.54, respectively), thus satisfying the recommendation that the Ca/P ratio is between 1 and 2. BGL showed a significantly higher content of desirable fatty acids (stearic acid and total unsaturated fatty acids) than did BGR. In addition, the levels of creatine, carnosine, and anserine in BGL were higher than those in BGR (p<0.05). There was no significant difference in the antioxidant activity between BGL and BGR, as assessed by FRAP (both $15.92{\mu}mol$ Trolox equivalent [TE]/g of dry matter [DM]), ABTS (12.51 and $12.90{\mu}mol\;TE/g\;DM$, respectively), and ORAC (101.25 and $99.06{\mu}mol\;TE/g\;DM$, respectively) assays. Conclusion: This was a primary study conducted to evaluate the differences in nutritional value and antioxidant activity between loin and rump cuts of black goat meat. Our results provide fundamental knowledge that can help understand the properties of black goat meat.

Use of Serological-Based Assay for the Detection of Pepper yellow leaf curl Indonesia virus

  • Hidayat, Sri Hendrastuti;Haryadi, Dedek;Nurhayati, Endang
    • The Plant Pathology Journal
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    • v.25 no.4
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    • pp.328-332
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    • 2009
  • Diseases caused by Pepper yellow leaf curl virus infection is considered to be emerging plant diseases in Indonesia in the last five years. One key factor for disease management is the availability of accurate detection of the virus in plants. Polyclonal antibody for Pepper yellow leaf curl Indonesia virus-Bogor (PYLCIV-Bgr) was produced for detection of the virus using I-ELISA and DIBA methods. The antibody was able to detect PYLCIV-Bgr from infected plants up to dilution 1/16,384 and cross reaction was not observed with Cucumber mosaic virus (CMV), Tobacco mosaic virus (TMV), and Chilli veinal mottle virus (ChiVMV). Positive reaction was readily detected in membrane containing Begomovirus samples from Yogyakarta (Kaliurang and Kulonprogo) and West Java (Bogor and Segunung). Infection of PYLCIV-Bgr in chillipepper, tomato, and Ageratum conyzoides was also confirmed using polyclonal antibody for PYLCIV-Bgr in DIBA. Polyclonal antibody for PYLCIV-Bgr is suggested to be included in disease management approach due to its good detection level.

A CMOS Bandgap Reference Voltage Generator for a CMOS Active Pixel Sensor Imager

  • Kim, Kwang-Hyun;Cho, Gyu-Seong;Kim, Young-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.71-75
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    • 2004
  • This paper proposes a new bandgap reference (BGR) circuit which takes advantage of a cascode current mirror biasing to reduce the V$\_$ref/ variation, and sizing technique, which utilizes two related ratio numbers k and N, to reduce the PNP BJT area. The proposed BGR is designed and fabricated on a test chip with a goal to provide a reference voltage to the 10 bit A/D(4-4-4 pipeline architecture) converter of the CMOS Active Pixel Sensor (APS) imager to be used in X-ray imaging. The basic temperature variation effect on V$\_$ref/ of the BGR has a maximum delta of 6 mV over the temperature range of 25$^{\circ}C$ to 70$^{\circ}C$. To verify that the proposed BGR has radiation hardness for the X-ray imaging application, total ionization dose (TID) effect under Co-60 exposure conditions has been evaluated. The measured V$\_$ref/ variation under the radiation condition has a maximum delta of 33 mV over the range of 0 krad to 100 krad. For the given voltage, temperature, and radiation, the BGR has been satisfied well within the requirement of the target 10 bit A/D converter.

A Design of 18 MHz Relaxation Oscillator with ±1 % Accuracy Based on Temperature Sensor (Temperature Sensor 기반 ±1 % 이내의 주파수 정확도를 가지는 18 MHz Relaxation Oscillator의 설계)

  • Kim, Sang Yun;Lee, Ju Ri;Lee, Dong Soo;Park, Hyung Gu;Kim, Hong Jin;Lee, Kang-Yoon
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.5
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    • pp.39-44
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    • 2013
  • In this paper, a Relaxation Oscillator with temperature compensation using BGR and ADC is presented. The current to determine the frequency of Relaxation Oscillator can be controlled. By adjusting the current according to the temperature using the code that is output from the ADC and BGR, was to compensate the output frequency of the temperature. It is fabricated in a 0.35 ${\mu}m$ CMOS process with an active area of $240{\mu}m{\times}210{\mu}m$. Current consumption is 600 ${\mu}A$ from a 5 V and the rate of change of the output frequency with temperature shows about ${\pm}1%$.

A CMOS Bandgap Reference Voltage/Current Bias Generator And Its Responses for Temperature and Radiation (CMOS Bandgap 기준 전압/전류 발생기 및 방사능 응답)

  • Lim, Gyu-Ho;Yu, Seong-Han;Heo, Jin-Seok;Kim, Kwang-Hyun;Jeon, Sung-Chae;Huh, Young;Kim, Young-Hee;Cho, Gyu-Seong
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1093-1096
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    • 2003
  • 본 논문에서는, CMOS APS Image Sensor 내에 포함되어 회로의 면적을 줄인 새롭게 제안된 CMOS Bandgap Reference Bias Generator (BGR)를 온도 및 방사능에 대한 응답을 실험하였다. 제안된 BGR 회로의 설계 목표는 V/sub DD/는 2.5V이상이고, V/sub ref/는 0.75V ± 0.5mV 마진을 가지게 하는 것이다. 제안된 BGR회로는 Level Shifter를 갖는 Differential OP-amp단과 Feedback-Loop를 가지는 Cascode Current Mirror를 사용하여 저전압에서도 동작을 가능하게 하였으며, 높은 출력저항 특성을 가지도록 하였다. 제안된 BGR회로는 하이닉스 0.18㎛ ( triple well two-poly five-metal ) CMOS 공정을 이용하여 Test Chip을 제작하였다. 온도의 변화와 Co-60 노출조건 하에서 Total ionization dose (TID) effect된 BGR회로의 V/sub ref/를 측정하여, 이를 평가하였다. 온도에 대한 반응은, 25℃ 일 때의 V/sub ref/에 대해, 각각 45 ℃에서 0.128%. 70℃에서 0.768% 변화하였다. 그리고 온도가 25℃일 때 50krad와 100krad의 방사능을 조사 하였을 경우, V/sub ref/는 각각 2.466%, 그리고 4.612% 변화하였다.

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BGRcast: A Disease Forecast Model to Support Decision-making for Chemical Sprays to Control Bacterial Grain Rot of Rice

  • Lee, Yong Hwan;Ko, Sug-Ju;Cha, Kwang-Hong;Park, Eun Woo
    • The Plant Pathology Journal
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    • v.31 no.4
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    • pp.350-362
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    • 2015
  • A disease forecast model for bacterial grain rot (BGR) of rice, which is caused by Burkholderia glumae, was developed in this study. The model, which was named 'BGRcast', determined daily conduciveness of weather conditions to epidemic development of BGR and forecasted risk of BGR development. All data that were used to develop and validate the BGRcast model were collected from field observations on disease incidence at Naju, Korea during 1998-2004 and 2010. In this study, we have proposed the environmental conduciveness as a measure of conduciveness of weather conditions for population growth of B. glumae and panicle infection in the field. The BGRcast calculated daily environmental conduciveness, $C_i$, based on daily minimum temperature and daily average relative humidity. With regard to the developmental stages of rice plants, the epidemic development of BGR was divided into three phases, i.e., lag, inoculum build-up and infection phases. Daily average of $C_i$ was calculated for the inoculum build-up phase ($C_{inf}$) and the infection phase ($C_{inc}$). The $C_{inc}$ and $C_{inf}$ were considered environmental conduciveness for the periods of inoculum build-up in association with rice plants and panicle infection during the heading stage, respectively. The BGRcast model was able to forecast actual occurrence of BGR at the probability of 71.4% and its false alarm ratio was 47.6%. With the thresholds of $C_{inc}=0.3$ and $C_{inf}=0.5$, the model was able to provide advisories that could be used to make decisions on whether to spray bactericide at the preand post-heading stage.

BGR mixture phosphor for white-light-emitting diode of liquid crystal display backlight

  • Lee, Sung-Hoon;Park, Je-Hong;Seo, Kwang-Il;Kim, Jong-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1559-1560
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    • 2007
  • BGR mixture phosphor pumped by 400 nm is developed for white-light-emitting diode of liquid crystal display backlight. White-emitting phosphor is prepared by mixing $Ba_2SiO_4:Eu^{2+}$ and $(Ba,Sr)_3MgSi_2O_8:Eu^{2+},Mn^{2+}$ phosphors.

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RNAseq-based Transcriptome Analysis of Burkholderia glumae Quorum Sensing

  • Kim, Sunyoung;Park, Jungwook;Kim, Ji Hyeon;Lee, Jongyun;Bang, Bongjun;Hwang, Ingyu;Seo, Young-Su
    • The Plant Pathology Journal
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    • v.29 no.3
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    • pp.249-259
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    • 2013
  • Burkholderia glumae causes rice grain rot and sheath rot by producing toxoflavin, the expression of which is regulated by quorum sensing (QS). The QS systems of B. glumae rely on N-octanoyl homoserine lactone, synthesized by TofI and its cognate receptor TofR, to activate the genes for toxoflavin biosynthesis and an IclR-type transcriptional regulator gene, qsmR. To understand genome-wide transcriptional profiling of QS signaling, we employed RNAseq of the wild-type B. glumae BGR1 with QS-defective mutant, BGS2 (BGR1 tofI::${\Omega}$) and QS-dependent transcriptional regulator mutant, BGS9 (BGR1 qsmR::${\Omega}$). A comparison of gene expression profiling among the wild-type BGR1 and the two mutants before and after QS onset as well as gene ontology (GO) enrichment analysis from differential expressed genes (DEGs) revealed that genes involved in motility were highly enriched in TofI-dependent DEGs, whereas genes for transport and DNA polymerase were highly enriched in QsmR-dependent DEGs. Further, a combination of pathways with these DEGs and phenotype analysis of mutants pointed to a couple of metabolic processes, which are dependent on QS in B. glumae, that were directly or indirectly related with bacterial motility. The consistency of observed bacterial phenotypes with GOs or metabolic pathways in QS-regulated genes implied that integration RNAseq with GO enrichment or pathways would be useful to study bacterial physiology and phenotypes.

A High Current Efficiency CMOS LDO Regulator with Low Power Consumption and Small Output Voltage Variation

  • Rikan, Behnam Samadpoor;Abbasizadeh, Hamed;Kang, Ji-Hun;Lee, Kang-Yoon
    • Journal of IKEEE
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    • v.18 no.1
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    • pp.37-44
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    • 2014
  • In this paper we present an LDO based on an error amplifier. The designed error amplifier has a gain of 89.93dB at low frequencies. This amplifier's Bandwidth is 50.8MHz and its phase margin is $59.2^{\circ}C$. Also we proposed a BGR. This BGR has a low output variation with temperature and its PSRR at 1 KHz is -71.5dB. For a temperature variation from $-40^{\circ}C$ to $125^{\circ}C$ we have just 9.4mV variation in 3.3V LDO output. Also it is stable for a wide range of output load currents [0-200mA] and a $1{\mu}F$ output capacitor and its line regulation and especially load regulation is very small comparing other papers. The PSRR of proposed LDO is -61.16dB at 1 KHz. Also we designed it for several output voltages by using a ladder of resistors, transmission gates and a decoder. Low power consumption is the other superiority of this LDO which is just 1.55mW in full load. The circuit was designed in $0.35{\mu}m$ CMOS process.

A Bandgap Reference Voltage Generator Design for Low Voltage SoC (저전압 SoC용 밴드갭 기준 전압 발생기 회로 설계)

  • Lee, Tae-Young;Lee, Jae-Hyung;Kim, Jong-Hee;Shim, Oe-Yong;Kim, Tae-Hoon;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.12 no.1
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    • pp.137-142
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    • 2008
  • The band-gap reference voltage generator which can be operated by low voltage is proposed in this paper. The proposed BGR circuit can be realized in logic process by using parasitic NPN BJTs because a $Low-V_T$ transistors are not necessary. The proposed BGR circuit is designed and fabricated using $0.18{\mu}m$ triple-well process. The mean voltage of measured VREF is 0.72V and the three sigma$(3{\sigma})$ is 45.69mv.