• Microbiology and Biotechnology Letters
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• 제25권6호
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• pp.566-570
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• 1997

During sporulation, Bacillus thuringiensis strains produce crystals consist of toxin proteins highly specific against insect pests. Their host specificities are desirable from a standpoint of environmental safety, but also limit market potential. Thus, development of improved Bacillus thuringiensis strains having broad host spectrum will contribute to increase its use. For the construction of Bacillus thuringiensis strain having broad host spectrum, we cloned cry1C gene encoding a toxin protein highly toxic against Spodoptera exigua from a B. thuringiensis isolate and constructed two recombinant plasmids, pUBClC and plC60. The plasmid PUBC1C has a replication origin of the natural plasmid pBC16 from B. cereus which is closely related species to B. thuringiensis, and the pBC16 was known to be replicated by rolling-circle mechanism. The plasmid pIC60 has a replication origin of a resident 60 MDa plasmid from B. thuringiensis subsp. kurstaki HD263, and it is believed that the pIC60 is replicated in a theta mode. The two plasmids were introduced into B. thuringiensis subsp. kurstaki cryB strain, and the transformed strains produced well-shaped bipyramidal crystals. We confirmed the expression of the cry1C gene by SDS-PAGE, and Western blotting. By investigating the segregational stability, it was found that the plasmid pIC60 is more stable than the pUBC1C.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제15권12호
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• pp.1184-1189
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• 2004

A new schematic of quadrature voltage controlled oscillator(QVCO) is designed and fabricated. To obtain quadrature characteristic and low phase noise simultaneously, two differential VCOs are forced to un in quadrature mode by using coupling amplifier with a source degeneration resistor, which is optimized to obtain quadrature accuracy with minimum phase noise degradation. The designed QVCO was fabricated in standard CMOS technology. The measured performance showed the phase noise of below -120 dBc/Hz at 1 MHEz frequency offset, tuning bandwidth of 210 MHz from 2.34 GHz to 2.55 GHz with a tuning voltage varying form 0 to 1.8 V Quadrature error of 0.5 degree and amplitude error of 0.2 dB was measured with conjunction with low-lF mixer. The fabricated QVCO requires 19 mA including 5 mA in the VCO core part fiom a 1.8 V supply.

• Journal of Crop Science and Biotechnology
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• 제11권4호
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• pp.263-268
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• 2008

Bacterial leaf pustule (BLP) caused by Xanthomonas axonopodis pv. glycines is a serious disease to make pustule and chlorotic haloes in soybean [Glycine max (L). Merr.]. While inheritance mode and map positions of the BLP resistance gene, rxp are known, no sequence information of the gene was reported. In this study, we made five near isogenic lines (NILs) from separate backcrosses (BCs) of BLP-susceptible Hwangkeumkong $\times$ BLP-resistant SS2-2 (HS) and BLP-susceptible Taekwangkong$\times$ SS2-2 (TS) through foreground and background selection based on the four-stage selection strategy. First, 15 BC individuals were selected through foreground selection using the simple sequence repeat (SSR) markers Satt486 and Satt372 flanking the rxp gene. Among them, 11 BC plants showed the BLP-resistant response. The HS and TS lines chosen in foreground selection were again screened by background selection using 118 and 90 SSR markers across all chromosomes, respectively. Eventually, five individuals showing greater than 90% recurrent parent genome content were selected in both HS and TS lines. These NILs will be a unique biological material to characterize the rxp gene.

• Journal of the Korean Geophysical Society
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• 제2권2호
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• pp.123-134
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• 1999

Magnetotelluric responses may be affected by strong anisotropy of the high-conductivity layers (HCL) in the upper mantle or lower crust. We have studied two-dimensional anisotropy MT modelling to examine the effect of high anisotropic media. Electrical properties of a homogeneous anisotropic body are defined by a symmetric conductivity tensor and the problem is described by coupled diffusion equation in the frequency domain. In two-dimensional anisotropic environments, diagonal elements of the impedance tensor have higher values than those in isotropic environments. In some cases, TM mode phases reach more than 90°and apparent resistivities decrease for some frequency range because of telluric distortion. GB decomposition may be used to recover regional responses, but can be affected by the regional anisotropic effect. Considering these results, BC87 dataset was interpreted with a modified anisotropic model.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제18권7호
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• pp.1652-1656
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• 2014

In this work, we demonstrated a 77 GHz waveguide VCO with transition from WR-12 to WR-10 for anti-collision radar applications. The fabricated waveguide VCO consists of a GaAs-based Gunn diode, a varactor diode, a waveguide transition, and two bias posts for operating as a LPF and a resonator. The cavity is designed for fundamental mode at 38.5 GHz and operated at second hormonic of 77 GHz. The waveguide transition has a 1.86 dB of insertion loss and -30.22 dB of S11 at the center frequency of 77 GHz. The fabricated VCO achieves an oscillation bandwidth of 870 MHz. Output power is from 12.0 to 13.75 dBm and phase noise is -100.78 dBc/Hz at 1 MHz offset frequency from the carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제25권5호
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• pp.515-525
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• 2014

In this paper, we present a design and implementation of a Voltage-tuned Planar Composite Resonator Oscillator(Vt-PCRO) with a low phase noise. The designed Vt-PCRO is composed of a resonator, two phase shifters, and an amplifier. The resonator is designed using a dual mode SIW(Substrate Integrated Waveguide) resonator and has a group delay of about 40 nsec. Of the two phase shifters (PS1 and PS2), PS1 with a phase shift of $360^{\circ}$ is used for the open loop gain to satisfy oscillation condition without regard to the electrical lengths of the employed microstrip lines in the loop. PS2 with a phase shift of about $70^{\circ}$ is used to tune oscillation frequency. The amplifier is constructed using two stages to compensate for the loss of the open loop. Through the measurement of the open loop gain, the tune voltage of the PS1 can be set to satisfy the oscillation condition and the loop is then closed to form the oscillator. The oscillator with a oscillation frequency of 5.345 GHz shows a phase noise of -130.5 dBc/Hz at 100 kHz frequency offset. The oscillation power and the electrical frequency tuning range is about 3.5 dBm and about 4.2 MHz for a tuning voltage of 0~10 V, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• 제42권7호
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• pp.63-70
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• 2005

We investigated the phase noise of an oscillator with a extremely high-Q resonator used as the resonant element. A TE$_{011}$ mode rutile-loaded resonator with high-temperature superconductive (HTS) $YBa_2Cu_3O_{7-\delta}$(YBCO) films used as the endplates is prepared for this purpose. At 23.5 K, the unloaded Q and the loaded Q are 863000 and 180000, respectively. The phase noise of -104.8 dBc/Hz at 1 KHz offset was observed for the oscillator having a resonator with $Q_{L}$ =180000 at the $TE_{01\delta$ mode resonant frequency of 8.545 GHz at 23.5 K Such oscillators with very low phase noise are expected to be used for building up communication systems capable of efficient use of the frequency band and high-speed data transmission as well as for Doppler radars. Frequency tuning could be realized for the resonator by using a piezoactuator Applicability of the tunable rutile resonator for fabricating tunable oscillators of high performances is discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.154-161
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• 2006

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

• Journal of IKEEE
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• 제17권3호
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• pp.267-274
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• 2013

This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.