• The Korean Journal of Pesticide Science
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• v.6 no.3
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• pp.224-229
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• 2002

In vivo metabolism study was carried out to find out the biochemical or metabolic tolerance mechanism between Diamond backmoth (DBM), Plutella xylostella and Beet armywarm (BAW), Spodoptera exigua to flupyrazofos. They showed some differences between the DBM and BAW. About 20% of flupyrazofos applied to the 3rd instar larvae of DBM was metabolized within 1 h and about 50% of that was metabolized within 4 h. The metabolites of flupyrazofos-oxon in 3rd instar larvae of DBM were increased 10 times more at 4 h than 1 h after application. The amounts of flupyrazol were nearly same between at 1 h and 4 h. The amount of unknown and origin increased 2 and 3 times more at 1 h than 4 h after application, respectively. In the 4th instar BAW larva, about 50% of flupyrazofos was metabolized within 1 h and about 70% of that was metabolized within 4 h. As metabolites, the amounts of flupyrazofos-oxon increased 2 times more at 4 h than 1 h after application. The amounts of flupyrazol increased 4 times more at 4 h than 1 h after application. The amount of unknown and origin increased 2.5 and 2 times more at 4 h than 1 h after application, respectively. From the study, it is supposed that hydrolytic enzyme, esterase, cleave the alkyl bond of flupyrazofos and conjugates with flupyrazofos. This seems to be the main tolerance mechanism of BAW to flupyrazofos.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.123-123
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.89-89
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• 2000

AlN 박막은 Al과 N원자의 부분적 이온결합 특성을 가진 공유결합을 한 육방정계의 wurtzite 경정구조의 화합물 반도체로서, III-V족 반도체 중 가장 큰 에너지 갭(6.2 eV), 결정 구조적 이방성, 화학 양론적 결합구조, 높은 탄성종과 전달속도(약 10$\times$106 m/s)와 높은 열전도도, 고온 안정성, 가시광성.적외선 영역에서의 좋은 투과성과 높은 굴절률, 상온 대기압에서의 유일하게 안정적인 특성을 가지고 있어, 절연재료, 내열재료, 저주파 영역 센서의 압전 트랜스듀서, 광전소자, 탄성파 소자 및 내환경 소자, MIS소자 등으로 주목받고 있다. 본 연구에서는 BAW 공진기의 활용을 목적으로 반응성 마그네트론 스퍼터링 방법으로 AIN 압전박막을 제작하여, 증착 조건-질소 농도, 고주파 출력, 전체 스퍼터링 압력, 기판 온도-에 대한 박막의 특성을 조사하였다. AlN 박막의 c축 우선 방위 결정성 및 낮은 투과성, 적당한 굴절률의 특성이 BAW 공진기의 활용을 위한 요건이므로, 각각의 증착 조건하에 제작된 박막은 XRD의 $\theta$/2$\theta$ 스캔 회절상에 의한 결정성의 분석과 우선 성장 결정면의 rocking curve 및 XRD로 측정한 FWHM과 표준 편차로 결정성의 배열성과 소자 응용가능성을 조사하였다. 박막의 표면.단면 미세 구조 및 평활도는 SEM으로 관찰하였으며, Al-N 결합 상태는 XPS와 FT-IR로 분석 조사하였다. 제작된 AlN 박막의 결정성 분석 결과, c축 우선 방위 성장을 위한 스퍼터링 압력에 대한 임계 질소 농도와 임계 스퍼터링 압력이 관찰되었다. 전체 스퍼터링 압력이 6~8 mTorr의 범위에서 나타난 최소 임계질소 농도는 10%, 최대 임계 질소 농도는 60%이며, 4 m Torr 이하 10 m Torr 이상의 전체 스퍼터링 압력에서 박막의 우선 방위성장이 제재된다. 이는 AlN 박막이 형성에 관여하는 질소 이온 양의 충분한 형성에 필요로 하는 질소 가스의 유입량에 따른 것으로 판단된다. AlN 박막의 c축 결정면인 (002) 결정면의 성장을 유도하며 다른 방향으로의 성장을 제어하여 소자 활용에 유용한 박막을 제작하기 위한 고주파 출력은 300W 정도가 적당하며, 기판을 가열하지 않았을 때 낮은 투과도를 나타낸다. 본 연구에 의한 BAW 공진기 활용을 위한 AlN 압전박막의 제작을 위한 최적 증착 조건은 기판의 가열 없이 6~8 mTorr의 전체 스퍼터링 압력에 20~25%의 질소종도, 300W의 고주파 출력이다. 최적 조건에서의 AlN 박막은 약 0.19$^{\circ}$의 FWHM과 약 0.08$^{\circ}$의 표준편차를 가지며, 균일하고 조밀한 표면 미세구조와 주상정 구조의 측면구조, 파장에 대한 약 2.0의 굴절률, 낮은 투과도와 화학 양론적 구조를 가지는 우수한 박막이 형성되었다.

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.62.1-62
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• 2003

• Proceedings of the Korean Society of Applied Pharmacology
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• 2002.07a
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• pp.232-232
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• 2002

• Asian Journal of Atmospheric Environment
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• v.9 no.2
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• pp.173-186
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• 2015

In Bangladesh, increases in the tropospheric ozone ($O_3$) concentration and in soil salinization may lead to crop damage. To clarify the effects of $O_3$ and/or soil salinity on Bangladeshi wheat cultivars, BAW1059 (salt-tolerant) and Shatabdi (salt-sensitive) were exposed to 70-day treatments with $O_3$ (charcoal-filtered air (CF), $1.0{\times}O_3$, and $1.5{\times}O_3$) and different levels of soil salinity (0, 4, and $8dS\;m^{-1}$). In both cultivars, the whole-plant dry mass and grain yield were significantly reduced by exposure to $O_3$. Increased soil salinity caused significant reductions in whole-plant growth and yield in Shatabdi, but the reductions were negligible in BAW1059. No significant interactions between $O_3$ and salinity were detected for growth, yield, and leaf gas exchange parameters in both cultivars. We concluded that the effects of $O_3$ are not ameliorated by soil salinity in two Bangladeshi wheat cultivars, regardless of their salinity tolerance.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1196-1199
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• 2002

The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used by high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.54-58
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• 2003

본 연구에서는 $SiO_2/Si$ 기판 위에 $1.1\mu\textrm{m}$ 두께의 ZRO 압전층을 다양한 조건 하에서 증착하고, 그 특성을 분석하고, film bulk acoustic wave resonator 소자에 적용하였다. 증착조건으로 $Ar/O_2$ 유량비를 25-75 %로 변화시켰으며, working pressure는 3~15 mtorr, RF power는 213~300 W로 변화시켜가며 실험을 하였다. 증착된 ZnO 박막은 XRD (X-ray diffractomter)와 SEM (scanning electron microscopy)을 통해 특성이 분석되었다. LFE모드의 BAW 공진기는 $50\times50\mu\textrm{m}^2$ 공진면적을 가지며, $W/SiO_2$의 5층 Bragg reflector와 상하부 전극으로 $1800{\AA}$의 Al-3% Cu, 그리고 $1.4\mu\textrm{m}$ 두께의 ZnO 압전박막으로 구성되었다. 2.128-2.151 GHz 주파수 사이에서 공진이 일어났으며, Q factor는 400으로 측정되었다.

• The Korean Journal of Pesticide Science
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• v.3 no.3
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• pp.60-67
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• 1999

Insecticidal activities of imidacloprid to sucking type insect pests, brown planthopper (BPH, Nilaparvata lugens) and peen peach aphid (GPA Myzus persicae), to chewing type insect pests, tobacco cut worm (TCW; Spodoptera litura) and beet armyworm (BAW, Spodoptera exigua) and to spiders, Pirata subpiraticus, Pachygnata clercki and Ummeliata insecticeps, as natural enemies were investigated by several bioassay methods. $LD_{50}$ of the chemical by topical treatment to BPH was 0.015 ${\mu}g/g$(48 hrs), while $LC_{50}s$ by leaf dipping and root zone treatment were 18.1 and 21.5 ppm, respectively. There was no difference in insecticidal activities between leaf dipping and root zone treatment. Imidacloprid also showed ovicidal effect of root zone treatment and its $LC_{50}$ was 6.8ppm $LD_{50}$ (48 hrs after treatment) of imidacloprid to GPA was $0.4{\mu}g/g$ in case of topical application and $LC_{50}s$ by leaf dipping and root zone treatment were 1.9 ppm and 13.7 ppm respectively. Leaf dipping was more effective than root zone treatment in GPA At topical application $LD_{50}$ (48 hrs after treatment) of imidacloprid to chewing type insect pests, TCW and BAW, were greater than 1,492 and $312{\mu}g/g$ and $LC_{50}s$ by leaf dipping method were 4,803 and Heater than 5,000ppm respectively. This means that imidacloprid has much less effect on chewing type insect pests, TCW and BAW. $LD_{50}$(48 hrs after treatment) of imidacloprid to wandering spiders, Pirata subpiraticus, Pachygnata clercki at topical application were greater dan $2941{\mu}g/g$ and greater than $2,976{\mu}g/g$ respectively and that to webbing spider, Ummeliata insecticeps, was 357 ${\mu}g/g$. Imidacloprid showed very low toxicity to the spiders and its selective toxicity ratios between spiders and BPH were greater than 19,600, greater than 19,800 and 23,800, respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.