• 한국정보통신학회논문지
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• 제7권5호
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• pp.1032-1037
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• 2003

보론 도핑된 CdS 박막을 chemical bath deposition법으로 증착하고, 도핑농도에 따른 박막의 구조적, 광학적 특성을 조사하였다. 보론 도핑된 CdS 박막은 XRD 분석 결과 (002)면 방향으로 강한 우선성장 방위를 가지며 육방정(hexagonal) 구조로 성장하였다 보론 도핑에 관계없이 모든 시편은 2.3 eV(녹색 발광) 및 1.6 eV(적색 발광) 부근에서 PL peak을 가지며, 도핑 농도가 증가함에 따라 피크 세기는 감소하였다. 보론 도핑에 따라 CdS 박막의 가시광 영역에서의 광투과율은 향상되었고, 밴드 갭은 증가하였다.

• Journal of Magnetics
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• 제20권2호
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• pp.97-102
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• 2015

The waste of sintered Nd-Fe-B magnets was recycled using the method of dopingPrNd nanoparticles. The effect of PrNd nanoparticle doping on the magnetic properties of the regenerated magnets has been studied. As the content of the PrNd nanoparticles increases, the coercivity increases monotonically, whereas both the remanence and the maximum energy products reach the maximum values for 4 wt% PrNd doping. Microstructural observation reveals that the appropriate addition of PrNd nanoparticles improves the magnetic properties and refines the grain. Domain investigation shows that the self-pinning effect of the rare earth (Re)-rich phase is enhanced by PrNd nano-particle doping. Compared to the magnet with 4 wt% PrNd alloy prepared using the dual-alloy method, the regenerated magnet doped with the same number of PrNd nanoparticles exhibits better magnetic properties and a more homogeneous microstructure. Therefore, it is concluded that PrNd nanoparticle doping is an efficient method for recycling the leftover scraps of Nd-Fe-B magnets.

• Journal of Magnetics
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• 제16권1호
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• Progress in Superconductivity
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• 제10권1호
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• pp.17-22
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• 2008

We have examined the effect of ball-milling on the superconducting properties of $MgB_2$ doped with C. The ball-milling of pre-reacted $MgB_2$ powder was carried out in dry or wet state using C or diethylenetriamine ($C_{4}H_{13}N_3$) as additives. The diethylenetriamine, whose chemical formula contains no oxygen, was chosen to avoid an excess oxidation during doping. The superconducting transition temperature (Tc) of the ball-milled or doped $MgB_2$ powders was only slightly smaller than that of undoped $MgB_2$. The critical current density (Jc) of the highly ball-milled $MgB_2$ was higher than that of C-doped $MgB_2$. The addition of diethylenetriamine was detrimental to Jc, although Tc was almost unchanged.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.915-917
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• 1999

We investigated the effects of doping elements on the Bi system superconductor. The doping elements can be classified into two groups depending on their supeconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The second group of doping elements(B, Si, Sn and Ba) almost uneffected the superconductivity of the 2223 and 2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Carbon letters
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• 제9권2호
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• pp.131-136
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• 2008

In order to investigate the effect of doping C, N, B and F elements on $TiO_2$ for reducing the band gap, the heat treatment of $TiO_2$ was carried out with tetraethylammonium tetrafluoroborate. Through XRD and XPS analysis, the C, N, B and F doped anatase $TiO_2$ was confirmed. According to the increase of temperature during treatment, the particle size was increased due to aggregation of $TiO_2$ with elements (B, C, N and F). To investigate the capacity of photocatalyst for degradation of dye under solar light, the degradation of acridine orange and methylene blue was conducted. The degradation of dyes was carried out successfully under solar light indicating the effect of doping elements (B, C, N and F) on $TiO_2$ for reducing the band gap effectively.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.637-640
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• 2009

In this work, we demonstrate 800 V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B\;^2/R_{SP,ON}$), To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below $^{\sim}$3.8 V, and high figure of merit ($V_B\;^2/R_{SP,ON}$>$^{\sim}$200 $MW/cm^2$) for a power MOSFET in $V_B\;^{\sim}$800 V range.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• 한국결정성장학회지
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• 제18권6호
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• pp.248-252
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• 2008

전기전도성이 우수하면서 입자 크기가 작은 $LiFePO_4$ 분말을 얻기 위해서, 이종원소(Cr+B 또는 Cr+Al) 도핑이 $LiFePO_4$의 전기전도도에 미치는 영향과 열처리 조건이 입자 크기에 미치는 영향에 대해서 조사하였다. 조성이 $LiFe_{0.965}Cr_{0.03}B_{0.005}PO_4$ and $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$인 두 종류의 분말을 기계화학적 밀링법으로 혼합 후 $675{\sim}759^{\circ}C$에서 $5{\sim}10$시간 열처리하여 합성하였다. 이종원소 도핑은 입자성장을 촉진하였고 전기전도도를 높이는 효과가 있었다. $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$의 전기전도도는 $1{\times}10^{-8}S/cm$로 도핑하지 않은 것의 $5{\times}10^{-10}S/cm$보다 높았다.