• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.422-422
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• 2012

투명전극 산화막은 태양전지, 평판 디스플레이 등의 투명전극과 같은 광전자 소자에 사용되고 있다. 투명 전도성 산화막으로서 ITO (Indium tin oxide)는 높은 투과도, 낮은 비저항, 높은 일함수 등의 장점을 가지고 있어서 그동안 널리 사용되어 왔다. 그러나 In의 희소성으로 인한 고가격 문제 때문에 이를 대체하기 위해 불순물을 도핑한 ZnO (Zinc oxide)에 관한 연구가 활발히 진행되어 왔다. ZnO의 전기전도도를 높이기 위해 일반적으로 Al, Ga, B와 같은 3족 원소가 ZnO의 n형 도펀트로 널리 사용된다. 그 중에서 Al은 반응성이 커서 박막 증착 중에 산화되기 쉬운 반면 낮은 생산단가, 우수한 전기적 및 광학적 특성을 보이기 때문에 투명 전극으로서 Al-doped ZnO (AZO)가 많이 이용되고 있다. 본 연구에서는 rf 마그네트론 스퍼터링 공정을 이용하여 glass 기판 위에 Al-doped ZnO (AZO) 투명 전도막을 증착하였고, 수명 및 신뢰성에 영향에 미치는 주요 인자로서 온도, 온도 사이클 및 습도에 따른 AZO 박막의 열화 특성에 대한 연구를 진행하였다. 또한, 온도 사이클, 고온 및 고온고습 환경에 장시간 노출된 AZO 박막들의 성능 저하 원인들을 미세구조 관찰, 전기적 및 광학적 특성 변화들을 연계하여 규명하고자 하였다.

• Environmental Engineering Research
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• 제20권4호
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• pp.329-335
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• 2015

The effects of ion-doping on $TiO_2$ nanotubes were investigated to obtain the optimal catalyst for the effective decomposition of Rhodamine B (RB) through UV photocatalytic oxidation process. Changing the calcination temperature, which changed the weight fractions of the anatase phase, the average crystallite sizes, the BET surface area, and the energy band gap of the catalyst, affected the photocatalytic activity of the catalyst. The ionic radius, valence state, and configuration of the dopant also affected the photocatalytic activity. The photocatalytic activities of the catalysts on RB removal increased when $Ag^+$, $Al^{3+}$ and $Zn^{2+}$ were doped into the $TiO_2$ nanotubes, whereas such activities decreased as a result of $Mn^{2+}$ or $Ni^{2+}$ doping. In the presence of $Zn^{2+}$-doped $TiO_2$ nanotubes calcined at $550^{\circ}C$, the removal efficiency of RB within 50 min was 98.7%.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.47.1-47.1
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.138-138
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Al (AZOB) films was investigated. AZOB films were deposited on PC substrates by DC magnetron sputtering. The thickness range of films were from 300 nm to 800 nm to identified as increasing thickness, stress between substrate and AZOB film. The. average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $1.58\times10^{-3}\Omega$-cm was obtained. We presented that a AZOB film of 500 nm was optimization to obtain a high transmittance and conductivity.

• 한국재료학회지
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• 제28권7호
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• pp.371-375
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• 2018

The manganese-, nickel-, and aluminum-doped cobalt ferrite powders, $Mn_{0.2}Co_{0.8}Fe_2O_4$, $Ni_{0.2}Co_{0.8}Fe_2O_4$, and $Al_{0.2}CoFe_{1.8}O_4$, are fabricated by the sol-gel method, and the crystallographic and magnetic properties of the powders are studied in comparison with those of $CoFe_2O_4$. All the ferrite powders are nano-sized and have a single spinel structure with the lattice constant increasing in $Mn_{0.2}Co_{0.8}Fe_2O_4$ but decreasing in $Ni_{0.2}Co_{0.8}Fe_2O_4$ and $Al_{0.2}CoFe_{1.8}O_4$. All the $M{\ddot{o}}ssbauer$ spectra are fitted as a superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. The values of the magnetic hyperfine fields of $Ni_{0.2}Co_{0.8}Fe_2O_4$ are somewhat increased in the A and B sites, while those of $Mn_{0.2}Co_{0.8}Fe_2O_4$ and $Al_{0.2}CoFe_{1.8}O_4$ are decreased. The variation of $M{\ddot{o}}ssbauer$ parameters is explained using the cation distribution equation, superexchange interaction and particle size. The hysteresis curves of the ferrite powders reveal a typical soft ferrite pattern. The variation in the values of saturation magnetization and coercivity are explained in terms of the site distributions, particle sizes and the spin magnetic moments of the doped ions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.216-216
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• 2012

The purpose of this work is to investigate a back surface field (BSF) on variety wafer resistivity for industrial crystalline silicon solar cells. As pointed out in this manuscript, doping a crucible grown Cz Si ingot with Ga offers a sure way of eliminating the light induced degradation (LID) because the LID defect is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation along the Ga doped Cz Si ingot. Because of the resistivity variation the Cz Si wafer from different locations has different performance as know. In the light of B doped wafer, we made wider resistivity in Si ingot; we investigated the how resistivities work on the solar cells performance as a BSF quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.78-79
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• 2009

본 연구에서는 ZnO계 투명전극 소재를 이용하여 RFID 태그 안테나에 적용 가능성 여부를 확인하였다. Si 기판위에 RF 스퍼터링 공정에 의해 Ga-doped ZnO 투명 마이크로스트립 스파이혈 안테나를 $2{\mu}m$를 증착하여 구현하고 그 전기적 특성을 측정하였다. HFSS 전자계 시뮬레이터를 사용하여 13.56MHz HF 주파수 대역에서 태그 안테나로서의 가능성을 검증한 후 Ga-doped ZnO 타겟을 사용한 RF 스퍼터링 공정에 의하여 스파이럴 안테나 패턴을 구현하였다. 마이크로스트립 선폭 및 선 간격을 $50\sim200{\mu}m$때 영역에서 조절하면서 안테나 패턴을 설계하였다. S 파라메터, 자기공진주파수 및 Q값을 시뮬레이션으로부터 도출하였다. Al $2{\mu}m$ 증착한 시편에 비하여 약 -10dB 정도의 이득저하가 발생하였으나 리더-태그를 밀착시킨 조건에서 1.7V (13.56MHz) 전압검출이 가능하였다.

• 한국세라믹학회지
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• 제47권6호
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• pp.608-612
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• 2010

Uvarovite Garnet is green pigment prepared by using $Cr_2O_3$, CaO and $SiO_2$ which are widely used in ceramic industry. The synthesis of above pigment was carried out by mixing $K_2Cr_2O_7$, $SiO_2$ and $CaCO_3$ as formulated and then firing at $1000{\sim}1200^{\circ}C$. To investigate the optimum synthesis condition of the Uvarovite Garnet. it was prepared by using CaO to replace $CaCO_3$, $CaF_2$ and $CaCl_2$. To get green brighter color, $Al^{3+}$ was substituted for $Cr^{3+}$. They were characterized by X-ray diffraction, UV-Vis spectroscopy, Raman spectroscopy and SEM analysis. When the pigments were applied to lime glazes (6 wt%), color parameters of Uvarovite Garnet showed the $L^*$=40.99, $a^*$=-16.23 and $b^*$=17.04.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.41-41
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.