• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.114-115
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• 2006

반도체 기술이 초고집적화 되어감에 따라 공정에서 선폭이 줄어들고, 박막을 다층으로 제조하는 것이 중요하게 되었다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며. 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 물리적 기상 증착법 (PVD)으로 질소비율을 변화하며 확산방지막을 증착하였고, 이를 여러 온도에서 열처리하여 X-ray Diffraction 분석을 하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.300.1-300.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.172-172
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• 2007

• The Magazine of the IEIE
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• v.37 no.8
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• pp.31-40
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• 2010

1947년 트랜지스터의 발명을 시작으로 사이리스터, MOSFET 및 IGBT 등의 전력반도체 소자가 개발되면서 산업, 가전 및 통신 등의 다양한 분야에서 실리콘 기반의 전력반도체 소자가 활용되고 있다. 개발 당시에는 10A/수백V 정도의 전류통전능력 및 전압저지능력을 가지고 있었지만, 현재에는 8000A/12kV급의 대용량 소자까지 생산되고 있다. 이러한 전력반도제 소자는 다양한 응용분야에 서 높은 전압 저지능력, 큰 전류 통전 능력 및 빠른 스위칭 특성을 요구하고 있다. 특히 최근의 전력변환장치들은 고온동작특성 및 고효율화에 대한 요구가 더욱 강조되고 있다. 일반적인 실리콘 전력반도체소자는 물질적인 특성한계로 고온에 서의 동작 시 소자 특성이 떨어지는 특징을 보이고 있어 고온 환경에 적합한 전력반도체 소자의 필요성이 증가되어 실리콘에 비해 밴드�b이 넓은 SiC 및 GaN 등의 wide bandgap 반도체 물질의 연구가 활발히 진행되고 있다. 특히 SiC는 단결정 성장을 통한 웨이퍼화가 용이하고 소자 제작공정이 기존 실리콘공정과 유사하여 많은 연구가 진행되었으며 일부 소자에서 상용화가 진행되었다. 본고에서는 현재 활발히 진행되고 있는 탄화규소 전력반도체소자의 기술동향에 대해 소개하고자 한다.

• Journal of the Korean Ceramic Society
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• v.17 no.4
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• pp.213-216
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• 1980

A glass-ceramics material of composition %SiO_2$: 38.50, $Al_2O_3$: 26.00, $Na_2O$: 18.00, CaO: 6.00, MgO: 4.00, $TiO_2$: 7.50 was strengthened by coating a series of glazes$(SiO_2-B_2O_3-Al_2O_3-CaO-PbO-Na_2O-)$, which has lower thermal expansion coefficient than that of the glass-ceramics. The thermal expansion coefficient of the glazes ranges $80~90{\times}10^{-7}$cm/cm/$^{\circ}C$, whereas that of the glass-ceramics is $115{\times}10^{-7}$cm/cm/$^{\circ}C$. The glass-ceramics was identified to be composed of nepheline, carnegieite low form, and meta sodium silicate crystal by X-ray diffraction phase analysis. The glaze, having lower melting point and appropriate thermal expansion coefficient, was tried to be stable and good at secondary heat treatment.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.148-153
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• 2007

The effect of silicon carbide (SiC) and graphite fillers incorporation on the abrasive wear behaviour of glass-vinyl ester (G-V) composites have been investigated. The three-body abrasive wear behaviour was assessed by rubber wheel abrasion tests (RWAT). The worn surfaces were examined using scanning electron microscopy (SEM). The addition of SiC and graphite fillers in G-V composite improves the abrasion resistance under different loads/abrading distances. The SEM studies indicate the reasons for failure of composites and influencing parameters.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.324-326
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• 1997

Low power ZnO-Si gas sensor below 500 mW at operating temperature has been fabricated by using micromachining technique. I-V measurement shows the power consumption of 260 mW at $400^{\circ}C$ The sensitivity of the sensor was 45 percent at operating temperature of $350^{\circ}C$(230 mW) with 1,000 ppm CO gas atmosphere. The response and the recovery time found out to be 94 sec and 180 sec, respectively, when CO gas was used. In order to measure the exact temperature of the gas sensing layer, Pt/Cr bilayer-RTD was used in this experiment.

• Journal of the Korean Ceramic Society
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• v.28 no.5
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• pp.390-398
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• 1991

$\beta$-Sialon powder was prepared from Wando pyrophyllite by the carbothermic reduction and nitridation at 135$0^{\circ}C$ for 10 h nitrogen atmosphere. Amorphous silica prepared from Si(OC2H5)4 was added to Wando pyrophyllite powder in order to control the final Z value. Two different methods were applied for synthesis of $\beta$-sialon powders. In Process A, the amorphous silica prepared from Si(OC2H5)4 was admixed to Wando pyrophyllite powder. Process B was started from the mixture of Wando Y2O3 was added to the synthesized $\beta$-Sialon powders as a sintering aid, and the mixed powders were hot pressed at 175$0^{\circ}C$ for 120 min in nitrogen atmosphere under 30 MPa. Their mechanical properties were compared. The maximum values of M.O.R., hardness and KIC were 667 MPa, 16 GPa and 6.3 MN/m3/2, respectively, and they are the values obtained form $\beta$-Sialon ceramics prepared by process A of Z=0.5.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.