• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.959-968
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• 2000

Direct reaction of elemental silicon with a mixture of (dichloromethyl)silanes 1 $[Cl_3-nMenSiCHCl_2:$ n = 0 (a), n = 1(b), n = 2(c), n = 3(d)] and hydrogen chloride has been studied in the presence of copper catalyst using a stirred bed reactor equ ipped with a spiral band agitator at various temperatures from $240^{\circ}C$ to $340^{\circ}C.$ Tris(si-lyl) methanes with Si-H bonds, 3a-d $[Cl_3-nMenSiCH(SiHCl_2)_2]$, and 4a-d $[Cl_3-nMenSiCH(SiHCl_2)(SiCl_3)]$, were obtained as the major products and tris(silyl)methanes having no Si-H bond, 5a-d $[Cl_3-nMenSiCH(SiCl_3)_2]$, as the minor product along with byproducts of bis(chlorosilyl)methanes, derived from the reaction of silicon with chloromethylsilane formed by the decomposition of 1. In addition to those products, trichlorosilane and tetra-chlorosilane were produced by the reaction of elemental silicon with hydrogen chloride. The decomposition of 1 was suppressed and the production of polymeric carbosilanes reduced by adding hydrogen chloride to 1. Cad-mium was a good promoter for and the optimum temperature for this direct synthesis was $280^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.2
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• pp.99-107
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• 1999

The graphitization is affected by the addition of small amount of the elements(such as Si, Al, Ni, B, Cr and Mn etc.) and the pre-treatment(such as cold rolling). Boron is well known element to accelerate the graphitization of cementite in high carbon steels. Also, cold rolling is known to accelerate the graphitization. But the graphitization nucleation mechanism by cold rolling is few reported. Therefore the effect of cold rolling in Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel on the graphitization is investigated quantitatively using hardness test, optical microscope and scanning electron microscope, neutron induced microscopic radiography. The nucleation of graphite in cold-rolled Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel is formed at void which is formed at pearlite/pearlite boundary by cold rolling. But the effect of cold rolling on graphitization in boron addition steel is more effective than that of no boron addition steel due to segregation of BN at void in boron addition steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.04a
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• pp.182-185
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• 2004

In this work, the effect of chemical treatments on surface properties of SiC was investigated in mechanical interfacial properties of carbon fibers-reinforced composites. The surface properties of the SiC were determined by acid/base values and contact angles. The thermal stabilities of carbon fibers-reinforced composites were investigated by thermogravimetric analysis (TGA). Also, the mechanical interfacial properties of the composites were studied in interlaminar shear strength (ILSS) and critical strain energy release rate mode II $(G_{IIC})$ measurements. As a result, tile acidically treated SiC (A-SiC) had higher acid value than that of untreated SiC (V-SiC) or basically treated SiC (B-SiC). According to the contact angle measurements, it was observed that chemical treatments led to an increase of surface free energy of the SiC surfaces, mainly due to the increase of the specific (polar) component. The mechanical interfacial properties of the composites, including ILSS and $(G_{IIC})$, had been improved in the specimens treated by chemical solutions. These results were explained that good wetting played an important role in improving the degree of adhesion at interfaces between SiC and epoxy resin matrix.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.59-59
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• 2009

The influences of B and Si in the filler metals on microstructure and isothermal solidification during transient liquid-phase (TLP) bonding of a nitrogen-containing duplex stainless steel with MBF-30 (Ni-4.5wt.%Si-3.2wt.%B) and MBF-35 (Ni-7.3wt.%Si-2.2wt.%B), were studied at the temperature range of $1030-1090^{\circ}C$ with various times from 60 s to 3600 s under a vacuum of approximately $10^{-5}$ Torr. In case of the former, BN, $Ni_3B$ and $Ni_3Si$ precipitates were formed in the bonding region. BN and $Ni_3Si$ secondary phases were present in the joint for the latter case. The formation of $Ni_3B$ within the joint centerline is dependent on B content. The morphology of $Ni_3Si$ is dominated by Si concentration. A difference between the times for complete isothermal solidification obtained by the experiments and the conventional TLP bonding diffusion model was observed when using MBF-35. According to the simulated results, the isothermal solidification completion time for MBF-35 case was smaller than that in MBF-30. However, this experimental value obtained using MBF-35 was notably larger than that obtained using MBF-30. Isothermal solidification of liquid MBF-30 is controlled by the first isothermal solidification regime dependent on B diffusion model, whereas that of liquid MBF-35 experiences two isothermal solidification regimes and is mainly controlled by the second isothermal solidification dependent on Si diffusion model. In addition, only if Si content exceeds a critical value, the slower 2nd solidification regime will commence.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1999.10a
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• pp.190-196
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• 1999

Hot forgeability of STD 61 steel was boronzed in boronizing paste mainly consisted of B4C and Na2B4O7 at various temperatures and times. Microhardness and thickness of boride layers were measured and distributions of B, Si, Cr and V on the cross section of specimen were observed by EPMA line analysis. Microscopic examination and results of EPMA showed that the boride layer consisted of two layers outer layer of FeB and inner layer of Fe2B. Microhardness of these boride layers was in the range of Hv 1800~2300. Thickness of boride layer increased with times and temperatures. Si-rich $\alpha$ layer was formed between boride layer and matrix. Element such as Cr concentration as Cr23(B, C)6 beneath the boride layer.

• KIEAE Journal
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• v.13 no.3
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• pp.91-96
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• 2013

The purpose of this study was to analyze the annual energy demand including heating, cooling and lighting according to kind of windows with transparent thin-film a-Si Building Integrated Photovoltaic(a-Si BIPV) for office building. The analysis results of the annual energy demand indicated that the a-si BIPV window was reduced by 8.4% than the clear gazing window. The base model A was combinate with a-Si BIPV window area of 67% and clear window area of 33% among the total exterior area. The model B is to be applied with low-e clear glass instead of clear glass of the base model A. The model B was reduced to annual energy demand of 1% more than the model A. Therefore, By using a-si BIPV solar module, the cooling energy demand can be reduced by 53%(3.4MWh) and the heating energy demand can be increase by 58%(2.4MWh) than clear glazing window in office building. Also, Model C applied to the high efficient lighting device to the model B was reduced to annual energy demand of 14.4% more than the Model D applied to the high efficient lighting device to the model A. The Model E applied with daylight dimming control system to the Model C was reduced to annual energy demand of 5.9% more than Model C.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.

• Journal of Powder Materials
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• v.13 no.4 s.57
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• pp.285-289
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• 2006

Co-Fe-Ni-B-Si-Cr based amorphous strips containing nitrogen were manufactured via melt spinning, and then devitrified by crystallization treatment at the various annealing temperatures of $300^{\circ}C{\sim}540^{\circ}C$ for up to 30 minutes in an inert gas $(N_2)$ atmosphere. The microstructures were examined by using XRD and TEM and the magnetic properties were measured by using VSM and B-H meter. Among the alloys, the amorphous ribbons of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ containing 121 ppm of nitrogen showed relatively high saturation magnetization. The alloy ribbons crystallized at $540^{\circ}C$ showed that the grain size of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ alloy containing 121 ppm of nitrogen was about f nm, which exhibited paramagnetic behavior. The formation of nano-grain structure was attributed to the finely dispersed Fe4N particles and the solid-solutionized nitrogen atoms in the matrix. Accordingly, it can be concluded that the nano-grain structure of 5nm in size could reduce the core loss within the normally applied magnetic field of 300A/m at 10kHz.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.