• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.127-131
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• 2011

In this paper, we study the electronic and magnetic properties of Cr substituted SiTe in the rock-salt structure compound using the full potential linearized augmented plane wave method within the generalized gradient approximation to the exchange correlation potential. Two stoichiometries are studied: $CrSi_3Te_4$ with 25 %, and $CrSiTe_2$ with 50 % Cr substitution. We found, from the total energy calculations, that the equilibrium lattice constant for cubic $CrSi_3Te_4$ is 11.64 a.u. and a = 7.89 a.u. and c = 11.13 a.u. for tetragonal $CrSiTe_2$. The integer value of the calculated magnetic moment per unit cell, $4{\mu}_B$ for $CrSiTe_2$ suggests that this compound is halfmetallic. The magnetic moment per unit cell for $CrSi_3Te_4$ is slightly larger than $4{\mu}_B$. The magnetic moment on Cr atoms are 3.61 and $3.62{\mu}_B$ in the $CrSi_3Te_4$ and $CrSiTe_2$, respectively. The presence of Cr atoms causes that the other atoms become slightly magnetized in both compounds. The electronic properties and the magnetism are discussed with the calculated spin-polarized density of states.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.51-59
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• 1986

It was the first time the MgO-C brick was developed for the lining materials in the hot spots in electric are furnace in 1972. MgO-C brick is high registant to thermal and structural spalling. Futhermore for the reason that carbon is hard to react with slag and MgO is high fireproof MgO-C brick shows a high corrosion registance to slag attack compared with conventional basic refractories. Owing to their excellent properties the use of MgO-C refractories are being developed widely in the field of shaped refractories and even in that of monolithic refractories. In this paper the oxidation of carbon the infiltration of slag into the brick texture and effects of additions were investigated. The results obtained were as follows : 1) The use of fused MgO-clinker and high purity carbon as raw materials increased the corosion registance and hot modulus of rupture of MgO-C brick. 2) As the oxidation reaction of the carbon proceeded the slag infiltrated into the brick texture. And then the slag components reacted with the MgO grains and formed low melting point compounds particulary CaO.MgO.$SiO_2$ and 3CaO.MgO.$2SiO_2$ that resulted in the wear of the brick. 3) It is recongnized the Al, Si, $B_3C$ effects on the oxidation registant properties of MgO-C brick by contribu-ting to the decrease of permeability according to the formation of $Al_4C_3$, SiC, $B_2O_3$ and the decrease of open pores relating to the formation of MgO.Al2O3, $SiO_2$, 3MgO.$B_2O_3$ at the decarbonized layer.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1916-1918
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of ${\beta}-SiC+ZrB_2$ composites with $Al_2O_3+Y_2O_3$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity) and follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles.

• Bulletin of the Korean Chemical Society
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• v.20 no.4
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• pp.427-430
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• 1999

The Grignard coupling reaction of bis(chloromethyl)diorganosilanes [(ClCH2)2SiR1R2: R1 = R2 = Me, la; R1 = Me, R2 = Ph, lb; R1 = R2 = Ph, lc] with diorganodichlorosilanes [(Cl2SiR3R4: R3 = R4 = Me, 2a; R3 = Me, R4 = Ph, 2b; R3 = R4 = Ph, 2c] at THE reflux temperature gave the intermolecular C-Si coupling product of 1,1,3,3-tetraorgano-1,3-disilacyclobutanes 3a-f in poor to moderate yields ranging from 7% to 50% along with polydiorganosilapropanes. The cyclization reaction of la-c with methyl-substituted dichlorosilanes 2a, b gave 1,3-disilacyclobutanes 3a-c, e, d in moderate yields (42-50%), while the same reaction with dichlorodiphenylsilane (2c) to 1,3-disilacyclobutanes 3d, f resulted in low yield (7-18%) probably due to the steric hindrance of two-phenyl groups on the silicon of 2c.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.232-236
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• 2010

Silicon carbide (SiC) ceramics are widely used in the application of high-temperature structural devices due to their light weight as well as superior hardness, fracture toughness, and temperature stability. In this paper, we employed classical molecular dynamics simulations using Tersoff's potential to investigate the elastic constants of the SiC crystal at high temperature. The stress-strain characteristics of the SiC crystal were calculated with the LAMMPS software and the elastic constants of the SiC crystal were analyzed. Based on the stress-strain analysis, the SiC crystal has shown the elastic deformation characteristics at the low temperature region. But the slight plastic deformation behavior was shown as applied the high strain over $1,000^{\circ}C$. Also the elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa as increased the temperature to $1,250^{\circ}C$.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1043.2-1048
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• 1996

자기기록의 고밀도화로 인해 보자력(Hc)이 큰 자기기록매체가 필요하게 되었다. 고보자력매체에 신호를 충분히 기록하기 위해서는 보다 강한 자장이 필요하다. 이 때문에 포화자화(Ms)가 큰 재료가 필요하며 고주파 영역에서 실효투자율($\mu$eff)이 높아야 한다. Fe계 합금박막은 이에 적합한 재료이다. 본 연구에서는 Fe의 결정자기이방성에 영향을 미치는 Si과 Fe의 격자 변형을 유도할 수 있는 B를 첨가하였다. Fe-B-Si 계 박막을 질소분위기 중에서 RF Matnetron Sputter로 제작하여 연자기적 특성에 관하여 고찰하였다. Fe91.49B4.01Si4.50at% 박막은 35$0^{\circ}C$에서 1시간 열처리를 행함으로써 약 900(10MHz) 정도의 투자율과 7.6Oe의 보자력을 나타냈으며 포화자화는 1300emu/㎤를 얻었다.

• Solar Energy
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• v.10 no.3
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• pp.46-52
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• 1990

Novel a-Si solar cells with delta-doped(${\delta}x$-doped) P-layer have been fabricated to enhance the hole concentration of the P-layers. The ${\delta}-$doped P-layer consists of very thin B sheets of 0.1-0.5 atomic layers and undoped a-SiC multi-layers. B-layers were prepared by photo-CVD and pyrolysis technique. The structural, optical and electrical characteristics of the delta-doped P-layer films were evaluated by means of FTIR, AES and SIMS. As the results of this study, it was found that the ${\delta}$-doped P-layer showed much superior optical and electrical characteristics than those of conventional uniformly B-doped a-Si layers. 12.5% energy conversion efficiency was achieved for the Cell with ${\delta}$-doped P-layer.