• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.434-441
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] of $Al_2O_3+Y_2O_3$(6:4 mixture of $Al_2O_3\;and\;Y_2O_3$) as a sintering aid. The relative density and mechanical properties are increased markedly at temperatures in the range of $1,850{\sim}1,900[{^\circ}C]$. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 81.1[%], 230[MPa], 9.88[GPa] and $6.05[MPa\;m^{1/2}]$ for $SiC-ZrB_2$ composites of $1,900[{^\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[{^\circ}C]\;to\;700[{^\circ}C]$, The electrical resistivity showed the value of $1.36{\times}10^{-4},\;3.83{\times}10^{-4},\;3.51{\times}10^{-4}\;and\; 3.2{\times}10^{-4}[{\Omega}{\cdot}cm]$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $4.194{\times}10^{-3},\;3,740{\times}10^{-3},\;2,993{\times}10^{-3},\;3,472{\times}10^{-3}/[^{\circ}C}$ for SZ1750, SZ1800, SZ1850 and SZ1900 respectively in the temperature ranges from $25[{\circ}C]\;to\;700[{\circ}C]$, It is assumed that because polycrystallines such as recrystallized $SiC-ZrB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-ZrB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권4호
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• pp.99-106
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• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• 한국자기학회지
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• 제17권3호
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• pp.124-127
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• 2007

비정질 $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$층을 갖는 자기터널접합(magnetic tunneling junctions; MTJ)를 연구하였다. 비정질 자유층이 MTJ의 스위칭 특성에 미치는 영향을 중점적으로 이해하기 위하여 기존의 사용된 CoFe 그리고 NiFe층들을 대신하여 비정질 강자성체 CoFeSiB을 사용하였다. CoFeSiB은 CoFe과 NiFe보다 각각 낮은 포화자기장($M_s:\;560\;emu/cm^3$)과 높은 자기이방성 상수($K_u:\;0.2800\;erg/cm^3$)를 갖는다. CoFeSiB층들의 사이에 1.0 nm Ru층 삽입시 $-0.003\;erg/cm^3$ 교환결합에너지($J_{ex}$)를 나타내었다. $Si-SiO_2-Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 또는 CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60(in nm) MTJ 구조의 터널접합에 대하여 실험 및 시뮬레이션 결과를 통하여 낮은 $J_{ex}$에 기인하는 스위칭 자기장(switching field; $H_{sw}$)의 시료 크기 의존성이 나타나는 것을 알 수 있었다. CoFeSiB 합성형 반강자성 구조는 micrometer뿐만 아니라 submicrometer 시료 크기영역에서도 보자력($H_c$)의 감소와 민감도를 증가 시킴으로써 자기 스위칭 특성에 유리한 것으로 확인 되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.196.1-196
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• 2003

• 한국주조공학회지
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• 제23권2호
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• pp.77-85
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• 2003

Some alloying elements such as Cr, B, Ti and Si were added individually or as a mixture to Fe-30 at.%Al alloys. The alloys were melted using an arc furnace and then heat-treated for homogenization at 1000$^{\circ}C$ for 7 days and followed by rolling at 1000$^{\circ}C$. The alloying elements on rolling characteristics were investigated by the microstructures and fracture mode before and after rolling. The microstructures before rolling showed that all of the alloys had equiaxed grains. On the other hand, the microstructures of rolling plane as well as its perpendicular plane became elongated after rolling. The alloys such as Fe-30Al, Fe-30Al-3Ti, Fe-30Al-0.5B, Fe-30Al-5Cr and Fe-30Al-3Ti-0.5B revealed better rolling behaviour from the point that intergranular and cleavage fractures were not fundamentally occurred. But the addition of 5Ti or 3Si to Fe-Al alloys had detrimental effects. The Ti-added alloy system such as Fe-30Al-5Ti, Fe-30Al-5Ti-5Cr, Fe-30Al-3Ti-5Cr and Fe-30Al-5Ti-0.5B were cracked through grain and showed cleavage fracture. The Si-added alloy system such as Fe-30Al-5Si, Fe-27Al-3Si and Fe-27Al-5Cr-3Si were cracked along the grain boundary and showed intergranular fracture. $DO_3{\leftrightarrow}B_2$ transition temperature of Fe-30at.%Al alloy was 520$^{\circ}C$, whereas the addition of 3Ti and 3Ti+0.5B comparably increased the temperature to 797 and 773$^{\circ}C$, respectively.

• 한국재료학회지
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• 제8권2호
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• pp.141-146
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• 1998

Ball mill을 이용하여 Ar 분위기에서 기계적 합금법으로 $Fe_{ 5}$$Si_{x}$ $B_{5-x}$ 분말을 제조하고, 제조된 분말을 연속 진공 열처리 시킨 후 Si첨가에 따른 결정구조 및 자기적성질을 조사하였다. 250시간 볼밀처리한 Fe$_{5}$ $B_{5}$ 합금에서 전체적으로 비정질 구조가 형성되었으나 일부분에 결정질이 존재하고 있었으며, $800^{\circ}C$에서 2시간 열처리하면 FeB와 $Fe_{2}$B 상이 혼재된 구조를 얻었다. 250시간 볼밀처리한 $Fe_{5}$ $Si_{2}$$B_{3}$합금에서 전체적으로 비정질 구조를 얻을 수 있었고, 이 시료를 2시간, $800^{\circ}C$로 열처리 하였을 때 $Fe_{2}$B상은 사라지고, 대부분 FeB의 균질한 상을 나타내었다. $Fe_{5}$ $B_{5}$ /조성에서는 분말 입자크기가 약 $1\mu\textrm{m}$이었으나, Si이 첨가되면 분말 입자크기가 약 $10\mu\textrm{m}$로 커졌다. Si의 첨가에 의해서 비정질상의 형성을 촉진시켜 단일 FeB상의 합성시간을 단축시킬 수 있었다.

• 한국주조공학회지
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• 제20권2호
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• pp.89-96
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• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• 한국세라믹학회지
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• 제29권10호
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• pp.791-796
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• 1992

SiC(p)-TiC(p) composites were prepared by gas pressure sintering technique. B4C powder and phenolic resin were added as sintering aids by 0.3 wt%-B and 3 wt%-C, TiC powder were dispersed in SiC by 0, 10, 20, 30 and 50 vol%. Flextural strength, fracture toughness and theoretical density of 70 vol% SiC-30 vol% TiC composite sintered at 220$0^{\circ}C$ by gas pressing were 540 MPa, 5.5 MPa.m1/2 and 98.8% respectively.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.209.1-209
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• 2003