• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1080-1081
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• 2006

In this investigation, $B_4C$ based ceramic composites were fabricated by in-situ reaction hot pressing using $B_4C$, TiC SiC powder as starting materials. The reaction synthesized composites by hot pressing at $1950^{\circ}C$ was found to posses very high relative density. The reaction synthesized $B_4C$ composites comprise $B_4C$, $TiB_2$, SiC and graphite by the reaction between TiC and $B_4C$. The newly formed $TiB_2$ and graphite was embedded both inside grain and at grain boundary $B_4C$. The mechanical properties of reaction synthesized $B_4C-TiB_2-SiC$-graphite composites were more enhanced compared to those of monolithic $B_4C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 전기학회논문지
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• 제57권11호
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 한국분말재료학회지
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• 제26권6호
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• pp.455-462
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• 2019

ZrB₂ ceramic and ZrB₂ ceramic composites with the addition of SiC, WC, and SiC/WC are successfully synthesized by a spark plasma sintering method. During high-temperature oxidation, SiC additive form a SiO₂ amorphous outer scale layer and SiC-deplete ZrO₂ scale layer, which decrease the oxidation rate. WC addition forms WO₃ during the oxidation process to result in a ZrO₂/WO₃ liquid sintering layer, which is known to improve the anti-oxidation effect. The addition of SiC and WC to ZrB₂ reduces the oxygen effective diffusivity by one-fifth of that of ZrB₂. The addition of both SiC and WC shows the formation of a SiO₂ outer dense glass layer and ZrO₂/WO₃ layer so that the anti-oxidation effect is improved three times as much as that of ZrB₂. Therefore, SiC- and WC-added ZrB₂ has a lower two-order oxygen effective diffusivity than ZrB₂; it improves the anti-oxidation performance 3 times as much as that of ZrB₂.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1336-1338
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• 1997

Relations between the composites of SiC-$ZrB_2$ electro-conductive ceramic composites and their electrical resistivity, as well as their temperature, were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method in the temperature of RT to $100^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogenous mixture of two kinds of particles with different conductivity. Also the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In the case of SiC-$ZrB_2$ composites containing above 30Vol.% $ZrB_2$ showed PTCR, whereas the electrical resistivity of SiC-15Vol.% $ZrB_2$ showed NTCR.

• 한국주조공학회지
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• 제12권2호
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• pp.131-138
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• 1992

The effects of B additions, alone or in combination with Si, on the microstructure, $DO_3{\rightleftharpoons}B2$ transition temperature($T_c$) and corrosion behavior of Fe-25at%Al alloys were investigated. The raw materials were arc-melted in vacuum and then subjected to the following heat treatments to maximize the $DO_3$ order : homogenized at $1000^{\circ}C$ for 48hrs, slowly cooled to $500^{\circ}C$, and held at that temperature for 24hours. Results showed that the B addition to Fe-25at%Al alloys does indeed refine the grain and change from intergranular to transgranular fracture mode at room temperature, indicating a strengthening of grain boundaries. The Fe-25at% Al-1at% B-3at% Si alloy showed the highest $T_c$(${\Delta}T_c=150^{\circ}C$) in this work. However, the effectiveness of Si in raising $T_c$ decreased with more than 5at% Si additions combined with B. Since the preferential corrosion occurs at the precipitates, the corrosion resistance decreased due to the increased amount of precipitates with alloying additions.

• 한국진공학회지
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• 제2권2호
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• pp.199-208
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• 1993

Si 기판 표면상태 변화와 관련된 핵생성 자유에너지 증가에 따른 다이아몬드 박막성장 거동을 관찰하였다. 표면 염마조건 변화에 따른 3가지 기판(A-Si, B-Si, C-Si)위에 동일한 성장조건으로 다이아몬드를 성장하였으며, 이때 형상인자와 관련된 자유에너지 관계는 ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$이다. AES, SEM, XRD, RHEED에 의해 각각의 박막 A, B, C를 조사한 결과, 핵생성 자유에너지가 가장 적은 A 박막은 (100) (110) 면이 지배적인 고품위 다이아몬드 박막이다. 자유에너지가 A에 비해 다소 적은 B 박막은 (111) 면이 지배적인 8면체 다이아몬드 박막이고, 자유에너지가 자장 적은 C 박막은 흑연이 많이 함유된 구상의 다이아몬드이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.311-313
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• 1997

The effects of porosity on the pressureless sintered $\beta$-SiC-$ZrB_2$ composites with $Al_2O_3$ additions(4, 8, 12wt.%) under argon atmosphere were investigated. Relative density of $\beta$-SiC-$ZrB_2$ composites were decreased with the $Al_2O_3$ content. The relative density and fracture toughness of $\beta$-SiC-$ZrB_2$ with 4wt% $Al_2O_3$ are 93.2%, $1.323MPa{\cdot}m^{1/2}$ respectively. The Vicker's hardness and flexural strength of $\beta$-SiC-$ZrB_2$ with 12wt.% $Al_2O_3$ are 0.492GPa, 261MPa respectively. Fracture toughness of $\beta$-SiC-$ZrB_2$ composites are directly proportional to relative density.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.95.1-95.1
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• 2012

Very High Temperature gas cooler Reactor (VHTR) has been considered as one of the most promising nuclear reactor because of many advantages including high inherent safety to avoid environmental pollution, high thermal efficiency and the role of secondary energy source. The TRISO coated fuel particles used in VHTR are composed of 4 layers as OPyC, SiC, IPyC and buffer PyC. The significance of CVD-SiC coatings used in tri-isotropic(TRISO) nuclear coated fuel particles is to maintain the strength of the whole particle. Various methods have been proposed to evaluate the mechanical properties of CVD-SiC film at room temperature. However, few works have been attempted to characterize properties of CVD-SiC film at high temperature. In this study, micro tensile system was newly developed for mechanical characterization of SiC thin film at elevated temperature. Two kinds of CVD-SiC films were prepared for micro tensile test. SiC-A had [111]-preferred orientation, while SiC-B had [220]-preferred orientation. The free silicon was co-deposited in SiC-B coating layer. The fracture strength of two different CVD-SiC films was characterized up to $1000^{\circ}C$.The strength of SiC-B film decreased with temperature. This result can be explained by free silicon, observed in SiC-B along the columnar boundaries by TEM. The presence of free silicon causes strength degradation. Also, larger Weibull-modulus was measured. The new method can be used for thin film material at high temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.98-103
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• 1999

The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.