• 한국안전학회지
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• 제20권4호
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• pp.29-33
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• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• 한국세라믹학회지
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• 제31권5호
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• pp.552-560
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• 1994

A composite of TiB2-Al2O3 system was successfully prepared from a mixture of TiO2, B2O3, and Al by self-propagating high temperature synthesis (SHS) with a novel characteristic, utilizing the internal oxidation heat of aluminium metal of the mixture, instead of by a conventional technique, externally heating a mixture of Ti, B and Al2O3. From a mixture with B/Ti molar ratio of =2.0, pure two phases of TiB2 and $\alpha$-Al2O3 with good crystallinity and small, uniform sizes were formed. However, when the B/Ti molar ratio of the mixture goes to a value less than 2.0, in addition to the above main minerals, a small smounts of metastable phases such as TiB and Ti3B4 were formed. It was found that about 60%, the optimum green density of compacts gave their highest reaction rate and temperature during SHS process. TiB2-Al2O3 system composite with B/Ti molar ratio of =2.0 could be pressurelessly sintered even at 190$0^{\circ}C$ under Ar gas flows without any addition of sintering aids, showing their good properties such as 91.2% in relative density, 2750 kgf/$\textrm{mm}^2$ in Vickers hardness and 2620 kgf/$\textrm{cm}^2$ in flexural strength.

• 한국세라믹학회지
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• 제35권12호
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• pp.1274-1279
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• 1998

The glass forming ability of the PbO-B2O3-TiO3-BaO system was investigated in relation to transitieon tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-perature differences between liquidus temperature and crystallization(or glass transition) temperature de-creased and the temperature difference between crystallization and glass transition temperature increases. The atomic ratio could be used as a criterion to deign glass systems. The interposition of B and Ba atoms between Pb and Ti atoms was one of important factors in glass formation.

• 공업화학
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• 제10권6호
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• pp.885-888
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• 1999

본 연구에서는 $Na_2B_4O_7{\cdot}10H_2O/Na_2B_4O_7{\cdot}5H_2O$ 반응계의 열분해 탈수반응에 의한 반응속도상수를 결정하고 반응계의 재현성 및 화학축열재의 반복사용에 따른 내구성을 검토하였다. 반응계의 열분해 탈수반응의 차수는 1차이었고, 열분해 탈수 반응속도는 수증기의 분압차에 정비례하였다. 반응계의 반응속도상수는 약 0.27이었고, 반응속도상수와 반응차수에 대한 반응의 재현성이 우수하였다. 또한 화학축열재의 내구성은 연속적으로 반복 사용하여도 활성변화는 ${\pm}5%$ 범위 내에 있었다.

• 공업화학
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• 제8권6호
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• pp.1029-1033
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• 1997

본 연구에서는 $Na_2B_4O_7{\cdot}10H_2O$의 열분해 반응계를 이용하여 축열식 열교환기에 적용하기 위한 반응속도의 비등온 해석에 대한 기초연구를 수행하였다. $Na_2B_4O_7{\cdot}10H_2O/Na_2B_4O_7{\cdot}5H_2O$ 계에서 반응의 평형온도가 373K 이하의 저온 온도범위에서 화학축열재로 적합하였으며, 열효율이 일정하여 장시간 사용할 수 있었다. 계 내의 반응 개시온도는 가열속도 증가에 따라 저온 영역에서 고온영역으로 이동하였으며, 수증기 분압의 변화가 있어도 저하되지 않았다. 열분해 탈수반응에 의한 반응속도식의 차수는 0.67차로서 반응의 비등온 해석에 의하여 화학축열재로 사용할 수 있었다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.29-34
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• 2006

The effects of $B_2O_3$ addition on the low-temperature sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the amount of $B_2O_3$ and sintering temperature. Temperature coefficient of resonance frequency($T_f$) changes to a positive value with increasing the amount of $B_2O_3$ due to the increased amount of rutile phase which is one of the reaction products between $(Zn_{0.8}Mg_{0.2})TiO_3$ and $B_2O_3$. For $6.19 moi.{\%}B_2O_3$-added $(Zn_{0.8}Mg_{0.2})TiO_3$ system, it exhibits ${\epsilon}_r$ = 23.5, $Q{\times}f_o$ = 53,000 GHz, and $T_f$ = 0 ppm/$^{\circ}C$ when sintered at $900^{\circ}C$ for 5 h.

• 한국재료학회지
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• 제14권4호
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 한국세라믹학회지
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• 제40권10호
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• pp.998-1004
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• 2003

두 종류의 출발물질인 $Al_2$(S $O_4$)$_3$+x$Na_2$B$_4$ $O_{7}$$.$10$H_2O$(몰비;x=0.1, 0.7)와 ${\gamma}$-Al$_2$ $O_3$+x$Na_2$B$_4$ $O_{7}$$.$10$H_2O$(몰비; x=0.1, 0.7) 혼합시료로부터 재래식 및 마이크로파 열처리를 행하여 휘스커형 $Al_{18}$B$_4$ $O_{33}$ 입자들을 합성하였다. 휘스커형 $Al_{18}$B$_4$ $O_{33}$ 입자들의 성장에 마이크로파, flux양 및 온도의 영향을 X-선 회절장치 및 주사형 전자현미경을 사용하여 조사하였다. 재래식 및 마이크로파 열처리된 두 종류의 혼합시료는 각각 온도 및 flux양이 증가할수록 휘스커형 $Al_{18}$B$_4$ $O_{33}$ 입자의 크기가 증가하는 경향을 나타내었다. 한편, 재래식 열처리된 시료에 비하여 마이크로파 열처리된 시료에서 휘스커형 $Al_{18}$B$_4$ $O_{33}$ 입자들이 잘 발달되었다.자들이 잘 발달되었다.

• 한국세라믹학회지
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• 제38권6호
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• pp.593-595
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• 2001

Zinc-phosphate glasses에 B$_2$O$_3$를 도입하여 borate, phosphate, boro-phosphate networks가 혼재되어 있는 highly cross-linked structures를 형성시켜 Phosphate glasses의 화학적 안정화를 검토하였다. Raman 측정 결과 B$_2$O$_3$와 P$_2$O$_{5}$는 잘 혼화된 polynary networks를 이루고 있으며, 이렇게 하여 증진된 구조적 cross-linking에 의하여 xB$_2$O$_3$.(1-x)Zn$_2$P$_2$O$_{7}$ glasses의 T$_{g}$, T$_{d}$는 증가하였고 동시에 CTE는 감소하는 결과를 가져왔다.

• 한국세라믹학회지
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• 제35권3호
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• pp.287-293
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• 1998

The effects of B2O3 addition on the sintering behavior and th microwave dielectric properties of $(Mg_{0.93}Ca_{0.07})TiO_3$ ceramics were investigated. By addition of $B_2O_3$, increases the density of the ceramics increases and grain growth enhances, It was densified to over 94% of $(Mg_{0.93}Ca_{0.07})TiO_3$ theoretical density by the addition of 0.15-1.0wt% B2O3 and stable microwave dielectric properties observed by the addition of 0.2-0.4wt% $B_2O_3.\;(Mg_{0.93}Ca_{0.07})TiO_3$ ceramics sintered at $1200^{\circ}C$ exhibits maximum dielectric constants of 24-25 quality factor($Q{\times}f$) of more than 70000 and temperature coefficient of resonant frequency of $0\;ppm/^{\circ}C$ by adding of 0.15-0.4wt% $B_2O_3$.