• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.3
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• pp.185-190
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• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.629-635
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• 2010

Abstract In this study characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) are discussed. Deposition speed of HIPIMS with conventional balanced magnetic field is measured at about 3 nm/min, which is 30% of that of conventional RF sputtering process with the same working pressure. To generate additional magnetic flux and increase sputtering speed, electromagnetic coil is mounted at the back side of target. Under unbalanced magnetic flux from electromagnet with 1.5A coil current, deposition speed of AZO thin film is increased from 3 nm/min to 4.4 nm/min. This new value originates from the decline of particles near target surface due to the local magnetic flux going toward substrate from electromagnet. AZO film sputtered by HIPIMS process shows very smooth and dense film surface for which surface roughness is measured from 0.4 nm to 1 nm. There are no voids or defects in morphology of AZO films with varying of magnetic field. When coil current is increased from 0A to 1A, transmittance of AZO thin film decreases from 80% to 77%. Specific resistance is measured at about $2.9{\times}10-2\Omega{\cdot}cm$. AZO film shows C-axis oriented structure and its grain size is calculated at about 5.3 nm, which is lower than grain size in conventional sputtering.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.267-272
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• 2007

Al-doped ZnO (AZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering. The effects of oxygen flow ratio, which was used for a sputtering gas, on the AZO thin films were investigated by using the X-ray diffraction (XRD), atomic force microscopy (AFM), and Hall effects measurement. The AZO thin film, deposited with oxygen flow ratio of 0% at the growth temperature of $400^{\circ}C$, showed a strongly c-axis preferred orientation and the lowest resistivity of $6.9{\times}10^{-4}{\Omega}cm$. The ZnO (002) diffraction peak indicated a tendency to decrease substantially with increasing the oxygen flow ratio. Furthermore, as the oxygen flow ratio was decreased, the carrier concentration and the hall mobility were increased, but the electrical resistivity was decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.357-357
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• 2012

박막트랜지스터의 전극으로 Au, Ag, Mo, ITO와 같은 물질들이 이미 많이 연구되어 왔으며, 투명 Source/Drain 전극을 활용한 물질로는 ITO에 초점이 맞춰져 왔다. 하지만 ITO의 높은 가격과 Indium의 인체 유해한 독성 때문에 ITO를 대체하는 물질에 대해 많은 연구가 진행되고 있다. 그 중 Al이 도핑된 ZnO (AZO) 는 가시광 영역에서 85% 이상의 높은 투과율과 높은 전도성, 낮은 비저항으로 다양한 광전소자의 전극과 윈도우 물질로 많은 응용 가능성을 보여주고 있다. 본 실험에서는 고 품질의 박막성장이 가능하고, 박막의 두께를 세밀하게 조절할 수 있는 Pulsed Laser Deposition (PLD) 을 이용하여 온도변화에 따라 AZO 박막을 성장시키고 구조적, 전기적, 광학적 특성을 조사하였다. 또한 온도변화가 AZO 박막 특성에 미치는 영향을 분석하여 Source/Drain 전극으로 사용하기 위한 조건을 최적화하였고, 실제 투명박막트랜지스터 제작을 통해 소자의 I-V Curve 와 Transfer 특성을 확인하고, Transfer Length Method 방법을 이용하여 투명박막트랜지스터의 접촉저항, 채널 비저항 등을 확인해 보았다. 소결된 타겟으로는 99.99%의 순도를 갖는 ZnO-$Al_2O_3$ (98:2 wt%) 타겟을 이용하였으며, 장비조건으로는 355 nm의 파장대역을 갖는 Nd:YAG 레이저를 사용하였고, 실험변수로는 온도범위 RT, $200^{\circ}C$, $400^{\circ}C$, $600^{\circ}C$에서 실험을 진행하였다. AZO 박막의 구조적, 전기적 특성을 분석하기 위해 각각 X-Ray Diffraction (XRD), Hall measurement 장비를 사용하였으며, 광학적 특성을 분석하기 위한 투과도의 측정은 UV-Visible spectrophotometer 장비를 사용하였다.

• Journal of Surface Science and Engineering
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• v.42 no.3
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• pp.128-132
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• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.352-356
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• 2011

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.847-854
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• 2012

Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.1-7
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• 2007

AZO thin films have been fabricated on quartz substrate with various Al doping concentrations and annealing temperatures by sol-gel method. The bset condition of (002) orientation and smooth surface (rms = 1.082 nm) is obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$. The optical transmittance of AZO thin films is higher than 80 % in the visible region. We observe that the energy band gap extends with increasing the Al doping concentration. This phenomenon is due to the Burstein-Moss effect. Through the measurement of Hall effect, it is observed that the AZO thin film has larger carrier concentration and smaller electrical resistivity than the pure ZnO thin film. However, the AZO thin film shows the decrease of carrier concentration and the increase of resistivity with the increase of Al concentration, that is due to the segregation of Al at grain boundaries. The maximum carrier concentration of $1.80{\times}10^{19}\;cm^{-3}$ and the minimum resistivity of 0.84 ${\Omega}cm$ are obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$.