• Analytical Science and Technology
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• v.5 no.3
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• pp.303-308
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• 1992

Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.832-837
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• 1997

본 연구에서는 반도체 소자의 수율을 현저히 저하시키는 반도체 습식 세정 시 건조 후 웨이퍼 표면에 형성된 water mark의생성 원인을 고찰하였다. 이를 위해 초순수수의 물방울을 다른 접촉각의 시편 위에 고의로 잔류시킨 후 질소 및 산소 분위기에서 건조시켰다. 건조 분위기와 상관없이 HF 처리된 소수성의시편 뿐만 아니라 친수성의 시편에서도 water mark이 관찰되었다. 생성된 water mark의 크기는 분위기에 무관하게 접촉각이 증가함에 따라 감소하였다. 그러나 산소 분위기에서 HF처리된 시편은 건조 후 질소 분위기에서 생성된 water mark의 크기보다 2배이상 크게 형성되었다. 이들 산소 및 질소 분위기에서 HF 처리된 실리콘 시편 위에 생성된 water mark의 성분을 AES(Auger Electron Spectroscopy)로 분석한 결과 water mark는 실리콘과 산소의 화합물 형태로 존재함을 확인하였다. AAS(Atomic Absorption Spectroscopy)분석 결과 건조 분위기에 상관 없이 HF처리된 실리콘 시편 위에 물방울을 30분 잔류시 물방울 내의 실리콘 농도가 증가하였다. 또한 물방울내 ozone을 첨가하여 실리콘 표면을 산화 시켰을 때 물방울과 표면의 접촉각 감소와 water mark의크기의 증가를 초래하였다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• KSTLE International Journal
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• v.1 no.1
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• pp.12-20
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• 2000

Nano-wear and friction of carbon overcoated laser-textured and mechanically-textured computer hard disk were characterised after contact start/stop (CSS) wear test. Various analytical and mechanical testing techniques were employed to study the changes in topography, roughness, chemical elements, mechanical properties and friction characteristics of the coating arising from the contact start/stop wear test These techniques include: the atomic force microscopy (AFM), the continuous nano-indentation test, the nano-scratch test, the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) and the auger electron spectroscopy (AES). It was shown that the surface roughness of the laser-textured (LT) bump and mechanically textured (MT) Bone was reduced approximately am and 7nm, respectively, after the CSS wear test. The elastic modulus and hardness values increased after the CSS test, indicating straining hardening of the top coating layer, A critical load was also identified fer adhesion failure between the magnetic layer and the Ni-P layer, The TOF-SIMS analysis also revealed some reduction in the intensity of C and $C_2$$F_59$, confirming the wear of lubricant elements on the coating surface.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.932-936
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• 1999

4NH(sub)3+$3O_2$$\longrightarrow$$2N_2$+$6H_2$O 의 화학반응식을 가지며$ O_2$ 및 $H_2$O를 산화제로 하는 $NH_3$/$O_2$산화의 성장모델을 세웠으며, 그 결과 Fick의 제 1 법칙을 기초로 하는 건식 및 습식 산화메카니즘으로 이해되는 Deal-Grove의 산화막 성장모델과 유사한 결과가 도출되었다. 이 성장모델에 의하면 산화제$ O_2$ 및 $H_2$O가 상호보완적으로 산화에 영향을 미치므로 산화온도 뿐 아니라 $NH_3$/O$_2$의 유량비도 산화율을 결정한다. rapid thermal processing(RTP)에 의한 산화막 성장실험으로 본 연구에서 제안하는 성장모델을 확인하였으며, NH$_3$분자의 분해에 의해 발생하는 N 원자의 산화막 내부확산을 secondary ion mass spectroscopy(SIMS)로 확인하였으며, Auger electron spectroscopy (AES) 측정결과 N 원자의 존재는 무시할만한 수준이었다.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.39-47
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• 1996

The segregation of S in electrotransport-purified polycrystaline $\alpha$-Ti and Ti-aluminide alloys has been studied by Auger electron spectroscopy(AES), Ion scattering spectroscopy(ISS) and Secondary ion mass spectrometry(SIMS) in the temperature range extending from 20 to $1000^{\circ}C$. The chemisorbed oxygen and carbon on Ti were observed to disappear at T>$400^{\circ}C$ after which the S signal increased to levels approaching 0.5 monolayer. At lower temperatures the presence of the surface oxygen and carbon appeared to inhibit the segregation, presumably because there were no available surfaces sites for the S emerging from the bulk. The activation energy for the S segregation in pure polycrystaline Ti was determined to be 16.7 kcal/mol, which, when compared to S segretation from single-crystal Ti, is quite small and suggests grain boundary or defect diffusion segregation kinetics. In the Ti-aluminide alloys, the presence of Al appeared to enhance the retention of surface oxygen which, in turn, substantially reduced the S segretation. The $\gamma$ alloy, with its high Al content, exhibited the greatest retention of surface oxygen and the smallest quantity of the S segregation(T$\simeq1000^{\circ}C$).

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.