• Corrosion Science and Technology
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• v.20 no.5
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• pp.289-294
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• 2021

In this study, after measuring polarization characteristics of 97.3 wt% Ag, Au-Coated 97.3 wt% Ag (ACA) and 100 wt% Au wires in 1 wt% H₂SO₄ and 1 wt% HCl electrolytes at 25 ℃, corrosion rate and corrosion characteristics were comparatively analyzed. Comparing corrosion potential (E_CORR) values in sulfuric acid solution, ACA wire had more than six times higher E_CORR value than Au wire. Thus, it seems possible to use a broad applied voltage range of bonding wire for semiconductor packaging which ACA wire could be substituted for the Au wire. However, since the E_CORR value of ACA wire was three times lower than that of the Au wire in a hydrochloric acid solution, it was judged that the use range of the applied voltage and current of the bonding wire should be considered. In hydrochloric acid solution, 97.3 wt% Ag wire showed the highest corrosion rate, while ACA and Au showed similar corrosion rates. Additionally, in the case of sulfuric acid solution, all three types showed lower corrosion rates than those under the hydrochloric acid solution environment. The corrosion rate was higher in the order of 97.3 wt% Ag > ACA > 100 wt% Au wires.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1295-1300
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• 2008

During the manufacturing and the service life of Au-Al wire bonded electronic packages, the ball bonds experience elevated temperatures and hence accelerated thermal diffusion reactions that promote the transformation of the Au-Al phases and the IMC growth. In this paper, the IC under high temperature storage (HTS) tests at $175^{\circ}C,\;200^{\circ}C$, and $250^{\circ}C$ are meticulously investigated. Thermal exposure resulted in the IMC growth, Kirkendall void and the crack of the Au-Al phases. The crack propagation occurs resulting in the failure of the Au-Al ball bonds. As the IC was exposed at the high temperature, decreased in the lifetime.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.34-36
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• 2005

Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

• Proceedings of the Korean Reliability Society Conference
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• 2011.06a
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• pp.49-54
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• 2011

반도체 칩과 패키지는 wire로 연결되는데, 이 때 반도체의 용도에 따라 다양한 wire와 pad의 조합이 사용되며, 이 두 개의 다른 금속물질 결합부위는 IMC(Inter Metallic Compound)를 형성하게 된다. 그러나, 결함 및 오염 등에 의하여 인접재료의 원자들이 이동하는 확산(Diffusion)이 발생하게 되어 IMC가 성장하고, 두 개의 금속물질간의 확산율은 상호 다르며, 확산율은 온도에 따른 함수가 된다. Au wire와 Ag pad를 이용하여 제조한 IR 수신모듈를 대상으로 3가지 고온조건에서 가속수명시험을 실시하였고, 각 온도별 수명분포를 바탕으로 가속계수와 활성화에너지 도출 및 정상온도에서의 수명도 예측할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.28-32
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• 2001

It was studied in the present work how the thermal cycling performance of LOC (lead on chip) packages depends on the package construct or leadframe materials. First, package body thickness and Au wire diameter were manipulated for the selection of proper package design. Secondly, two different types of leadframe materials (i.e. copper and 52%Fe-48%Ni alloy) were tested to determine the better material for improved reliability margin of plastically encapsulated microelectronic packages. This work shows that manipulating package body thickness was more effective than an increase of Au wire from 23$\mu\textrm{m}$ to 33$\mu\textrm{m}$ for the prevention of wire debonding failure. Further, this work indicates that the LOC packages including the copper leadframes can be more susceptible to thermal cycling reliability degradation due to chip cracking than those including the alloy leadframes.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.171-171
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• 2008

본 연구는 초음파 알루미늄 웨지 및 금 볼 본딩을 동시에 적용 가능한 본딩 Pad의 금속학적 안정성을 고려한 표층전극 형성 방법에 관한 것이다. 특히, 이동통신 및 전장용 모듈의 복합 및 융합화로 LTCC기판 패키징에 있어서 다양한 본딩 기술이 요구되고 있다. 전통적인 interconnection 기술인 Au ball 본딩 및 초음파 에너지를 이용한 Al wedge 본딩 기술이 동시에 사용되어야 하는 패키지 구조의 경우 본딩 패드의 표층전극 설계는 서로 상충되는 조건이 요구된다. 따라서, 본 연구에서는 LTCC기판의 표층전극의 Metal finish 방법으로 이용되는 ENEPIG(무전해 Ni/Pd/Au도금)공법으로 Au ball 본딩 및 초음파 Al wedge 본딩을 동시에 가능하게 하는 solution을 제시하여 패키징 자유도뿐만 아니라 Interconnection 신뢰성을 확보할 수 있었다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.10a
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• pp.97-101
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• 2001

Fine metal (Au, Ag, Cu) wire was extruded with hydrostatic extrusion process in cold condition. A vertical type 900kN hydrostatic extruder has been developed. The extruder was facilitated with high pressure container which are available for hot and cold forming. The container endured 1400MPa internal pressure and extrusion ratio To was achieved in cold forming for Au fine wire which had $600{\mu}m$ diameter. In contrast to the conventional macroscopic-sized-billet fine-wire requires higher extrusion pressure and effect of friction is much more significant.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1635-1640
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• 2000

In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1845-1847
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• 2013

The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.