• 한국진공학회지
• /
• 제15권1호
• /
• pp.89-96
• /
• 2006

최근 미세전자 소자에서 초고집적, 적층구조 추세는 선폭이 $0.25{\mu}m$ 이하까지 소형화되고 있는 실정이다. 이러한 미세화는 박막배선에서 높은 전류밀도를 초래하게 된다. 높은 전류밀도 하에서는 엘렉트로마이그레이션에 의한 결함발생이 미세전자 소자에서의 치명적인 문제점의 하나로 대두되고 있다. 본 연구는 Ag, Cu, Au, 그리고 Al 박막 등에서 엘렉트로마이그레이션 특성을 조사함으로써 박막배선 재료를 개선하기 위한 것이다. 고전기전도도를 갖고 있는 Ag, Cu, Au, 그리고 Al 박막배선에서 엘렉트로마이그레이션에 대한 저항 특성을 결함발생 시간 분석으로부터 활성화 에너지를 측정함으로써 조사하였다. 광학현미경 그리고 XPS 분석이 박막에서의 결함분석에 사용되었다. Cu 박막이 엘렉트로마이그레이션에 대해 상대적으로 높은 활성화 에너지를 보였다. 따라서 Cu 박막이 높은 전류빌도 하에서 엘렉트로마이그레이션에 대한 높은 저항성이 요구되는 차세대 미세전자 소자에서 적합한 박막배선 재료로서의 가능성을 갖는 것으로 판단된다. 보호막 처리된 Al 박막은 평균수명 증가, 엘렉트로마이그레이션에 대한 저항 특성 향상을 나타내며 이는 보호막 층과 박막배선 재료 계면에서의 유전 보호막 효과에 기인하는 것으로 사료된다.

• Bulletin of the Korean Chemical Society
• /
• 제33권5호
• /
• pp.1748-1752
• /
• 2012

We carried out the tip-enhanced Raman scattering (TERS) with a tip that is functionalized with a Aunanoparticle (AuNP, with a diameter of 250 nm). The AuNP tip is fabricated by a direct mechanical pickup of a AuNP from a flat substrate, and the TERS signal from the AuNP tip - organic monolayer - Au thin film (thickness of 10 nm) is recorded. We find that such a AuNP-tip interacting with a thin film routinely yields signal enhancement larger than ${\sim}10^4$, which is sufficient not only for local (with detection area of ~200 $nm^2$) Raman spectroscopy, but also the nanometric imaging of organic monolayers within a reasonable acquisition time (~20 minutes/image).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.7-11
• /
• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1995년도 제9회 학술발표회 논문개요집
• /
• pp.76-77
• /
• 1995

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.1537-1540
• /
• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• 대한기계학회논문집A
• /
• 제28권5호
• /
• pp.532-538
• /
• 2004

MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

• Progress in Superconductivity
• /
• 제9권2호
• /
• pp.188-192
• /
• 2008

We investigated the size effect on quench development in $Au/YBa_2Cu_3O_7$ (YBCO) thin film meander lines on sapphire substrates. The meander lines were fabricated by patterning YBCO films coated with gold layers. The lines were subjected to simulated AC fault current, and immersed in liquid nitrogen during the experiment. After the initial rapid rise, the resistance increased moderately and then slowly. In 4 inch-diameter meander lines, the period during which the resistance increased moderately was considerably longer than in 2 inch-diameter line. Moderate increase of resistance was originated from quench propagation. The film temperature was about 180 K at the point when the propagation was completed. The rate of resistance increase after the quench completion was not affected by the film size.

• Transactions on Electrical and Electronic Materials
• /
• 제11권2호
• /
• pp.77-80
• /
• 2010

Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권5호
• /
• pp.619-625
• /
• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 센서학회지
• /
• 제15권1호
• /
• pp.65-70
• /
• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.