• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.467-469
• /
• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto Y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.287-290
• /
• 2000

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as x, y, z-type film. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V].

• Journal of Electrochemical Science and Technology
• /
• v.4 no.4
• /
• pp.140-145
• /
• 2013

This study describes the electrodeposition of $Cu_2Se$ thin films with a two-step approach that is based on the initial modification of polycrystalline Au electrode with a selenium overlayer followed by a cathodic stripping of the layer as $Se^{2-}$ in a 1 M lactic acid electrolyte containing $Cu^{2+}$ ions. For this two-step approach to be effective, the $Cu^{2+}$ reduction potential should be shifted to more negative potentials passed potentials for the reduction of Se to $Se^{2-}$. This was accomplished by the complexation of $Cu^{2+}$ ions with lactic acid. The resultant $Cu_2Se$ films were characterized by linear sweep voltammetry combined with electrochemical quartz crystal microgravimetry, UV-vis absorption spectrometry and Raman spectroscopy. Photoelectrochemical experiments revealed that $Cu_2Se$ synthesized thus, behaved as a p-type semiconductor.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.42 no.1
• /
• pp.7-12
• /
• 2005

It was analyzed that the vibration and frequency characteristics for quartz crystal using a finite element method, ANSYS. It was investigated that the resonant frequency of quartz crystal by fixing the diameter of quartz crystal for the various its thickness. There were also studied that the resonant frequency value with different electrode thin films of Au, Ag and Al. As the result of this study, the best condition for quartz crystal unit was determined by the finite element method. If the thickness of quartz crystal is smaller than 0.2 mm, the high frequency over 8.102 MHz was obtained. In addition, as to the change of resonant frequency on electrode thin film, Al turned out to be superior to Au or Ag in frequency response.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.126-126
• /
• 2003

유기트랜지스터에 관한 연구는 1980년 이후부터 시작되었으나 근래에 들어 전 세계적으로 본격적인 연구가 진행되고 있다. 제작공정이 간단하고 비용이 저렴하며 충격에 의해 깨지지 않고 구부리거나 접을 수 있는 전자 회로 기판이 미래의 산업에 필수적인 요소가 될 것으로 예상되고 있으며 이러한 요구를 충족시킬 수 있는 유기트랜지스터의 개발은 아주 중요한 연구분야로 대두되고 있다. 본 연구에서는 표면처리에 따른 contact angle, I-V 특성곡선, 표면 morphology 등의 결과로부터 dry cleaning 한 것이 wet cleaning한 것보다 왜 좋은지를 논하고자 한다. 먼저 N-type SiO$_2$ 기판을 이용하여 back면의 oxide층을 제거한 후, back gate용으로 사용하기 위하여 sputtering장치로 Au/Cr을 증차하였다. 그리고 기판에 앞면을 photolithography 공정을 이용하여 Au/Cr를 1000$\AA$ 증착 하여 source-, drain-eldctrode를 제조하였다. 그리고 SiO$_2$ 기판의 표면처리를 달리하여 그 위에 유기박막을 증착하여 특성을 비교하였다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1457-1460
• /
• 2007

To understand the electronic charge transfer from cathode to an ETL in the TEOLED, the pristine $Alq_3$ thin film and the interfaces of both $Alq_3/Ba$ and $Alq_3/Au$ were investigated by using the NEXAFS spectroscopy. The unoccupied energy state of each interface using the NEXAFS Analyses at the C and OK-edges was assigned and charge transfer from Ba to ${\pi}^{\ast}$ of $Alq_3$ was investigated in detail.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.359-362
• /
• 2012

We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.73-74
• /
• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2004.03a
• /
• pp.611-616
• /
• 2004

In this study, microfabrication of a micro-arcjet nozzle with Fifth-harmonic generation Nd：YAG pulses (wavelength 213 nm) and its thrust performance tests were conducted. A micro-arcjet nozzle was machined in a 1.2 mm thick quartz plate. Sizes of the nozzle were 0.44 mm in width of the nozzle exit and constrictor diameter of 0.1 mm. For an anode, a thin film of Au (~100 nm thick) was deposited by DC discharge PVD in vacuum on divergent part of the nozzle. As for a cathode, an Au film was also coated on inner wall surface. In operational tests, a stable discharge was observed for mass flow of 1.0mg/sec, discharge current of 6 ㎃, discharge voltage of 600 V, or 3.6 W input power (specific power of 3.6 MW/kg). In this case, plenum pressure of the discharge chamber was 80 ㎪. With 3.6 W input power, thrust obtained was 1.4 mN giving specific impulse of 138 sec with thrust efficiency of 24 %.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.65-65
• /
• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.