• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1990.10a
• /
• pp.88-90
• /
• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].

• Bulletin of the Korean Chemical Society
• /
• v.24 no.3
• /
• pp.369-376
• /
• 2003

Coulson (ZINDO), Mulliken $(MP2/6-31G^*)$ and Natural $(MP2/6-31G^*)$ population analyses of several large molecules were performed by the Fragment Reassociation (FR) method. The agreement between the conventional ZINDO (or conventional MP2) and FR-ZINDO (or FR-MP2) charges of these molecules was excellent. The standard deviations of the FR-ZINDO net atomic charges from the conventional ZINDO net atomic charges were 0.0008 for $C_{10}H_{22}$ (32 atoms), 0.0012 for $NH_2-C_{16}O_2H_{28}-COOH$ (53 atoms), 0.0014 for $NH_3^+-C_{16}O_2H_{28}-COOH$ (54 atoms), 0.0017 for $NH_2-C_{16}O_2H_{28}-COO^-$ (52 atoms), 0.0019 for $NH_3^+-C_{16}O_2H_{28}-COO^-$ (53 atoms), 0.0024 for a conjugated model $(O=CH-(CH=CH)_{15}-C=O-(CH=CH)_{12}-CH=CH_2)$, 118 atoms), 0.0038 for aglycoristocetin $(C_{60}N_7O_{19}H_{52}^+$, 138 atoms), 0.0023 for a polypropylene model complexed with a zirconocene catalyst $(C_{68}H-{121}Zr^+$, 190 atoms) and 0.0013 for magainin $(C_{112}N_{29}O_{28}SH_{177}$, 347 atoms), respectively. The standard deviations of the FR-MP2 Mulliken (or Natural) partial atomic charges from the conventional ones were 0.0016 (or 0.0016) for $C_{10}H_{22}$, 0.0019 (or 0.0018) for $NH_2-C_{16}O_2H_{28}-COOH$ and 0.0033 (or 0.0023) for $NH_3^+-C_{16}O_2H_{28}-COO^-$, respectively. These errors were attributed to the shape of molecules, the choice of fragments and the degree of ionic characters of molecules as well as the choice of methods. The CPU time of aglycoristocetin, conjugated model, polypropylene model complexed with zirconocene and magainin computed by the FR-ZINDO method was respectively 2, 4, 6 and 21 times faster than that by the normal ZINDO method. The CPU time of $NH_2-C_{16}O_2H_{28}-COOH\;and\;NH_3^+-C_{16}O_2H_{28}-COO^-$ computed by the FR-MP2 method was, respectively, 6 and 20 times faster than that by the normal MP2 method. The largest molecule calculated by the FR-ZINDO method was B-DNA (766 atoms). These results will enable us to compute atomic charges of huge molecules near future.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.207-207
• /
• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.08a
• /
• pp.74-75
• /
• 2000

The past few decades have witnessed the development of very robust technique, known as magneto-optical trap(MOT), for cooling and trapping of neutral atoms using lasers and magnetic fields. This technique can easily produce cooled atoms to a temperature range of nano-kelvin $s^{(1)}$ . These laser cooled and trapped atoms have found applications in various fields, such as ultrahigh resolution spectroscopy, precision atomic clocks, very cold atomic collision physics, Bose-Einstein Condensation, the Atom laser, etc. Particularly, a few isolated atoms of very low temperature are needed in the cavity QED studies in the optical regime. One can obtain such atoms from a MOT using the atomic fountain technique. The widely used technique for atomic fountain is, first to cool and trap the neutral atoms in MOT. And then launch them in the vertical (1, 1, 1) direction with respect to cooling beams, using moving molasses technique. Recently, this technique combined with the cavity-QED has opened an active area of basic research. This way atoms can be strongly coupled to the optical radiation in the cavity and leads to various new effects. Trapping of single atom after separating it from MOT in the high Q-optical cavity is actively initiated presentl $y^{(2.3)}$. This will help to sharpen our understanding of atom-photon interaction at quantum level and may lead to the development of single-atom laser. Our efforts to develop an $^{85}$ Rb-atomic fountain is in progress. (omitted)

• Bulletin of the Korean Chemical Society
• /
• v.21 no.1
• /
• pp.75-80
• /
• 2000

The positions of Xe atoms encapsulated in the molecular-dimensioned cavities of fully dehydrated Na-A have been determined. Na-A was exposed to 1050atm of xenon gas at 400 $^{\circ}C$ for seven days, followed by cooling at pressure to encapsulate Xe atoms. The resulting crystal structure of Na-A(7Xe) (a = 12.249(1) $\AA$, $R_1$ = 0.065, and $R_2$ = 0.066) were determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(1) $^{\circ}C$ and 1 atm. In the crystal structure of Na-A(7Xe), seven Xe atoms per unit cell are distributed over four crystallographically distinct positions: one Xe atom at Xe(1) lies at the center of the sodalite unit, two Xe atoms at Xe(4) are found opposite four-rings in the large cavity, and four Xe atoms, two at Xe(2) and others at Xe(3), respectively, occupy positions opposite and between eight- and six-rings in the large cavity. Relatively strong interactions of Xe atoms at Xe(2) and Xe(3) with $Na^+$ ions of four-, eight-, and six-rings are observed:Na(1)-Xe(2) = 3.09(6), Na(2)-Xe(3) = 3.11(2), and Na(3)-Xe(2) = 3.37(8) $\AA$. In each sodalite unit, one Xe atom is located at its center. In each large cavity, six Xe atoms are found, forming a distorted octahedral arrangement with four Xe atoms, at equatorial positions (each two at Xe(2) and Xe(3)) and the other two at axial positions (at Xe(4)). With various reasonable distances and angles, the existence of $(Xe)_6$ cluster is proposed (Xe(2)-Xe(3) = 4.78(6) and 4.94(7), Xe(2)-Xe(4) = 4.71(6) and 5.06(6), Xe(3)-Xe(4) = 4.11(3) and 5.32(4) $\AA$, Xe(2)-Xe(3)-Xe(2) = 93(1), Xe(3)-Xe(2)-Xe(3) = 87(1), Xe(2)-Xe(4)-Xe(2) = 91(4), Xe(2)-Xe(4)-Xe(3) = 55(2), 59(1), 61(1), and 68(1), and Xe(3)-Xe(4)-Xe(3) = 89($^{\circ}1$)). These arrangements of the encapsulated Xe atoms in the large cavity are stabilized by alternating dipoles induced on Xe(2), Xe(3), and Xe(4) by eight- and six-ring $Na^+$ ions as well as four-ring oxygens, respectively.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.9
• /
• pp.1023-1029
• /
• 2001

The positions of Kr atoms encapsulated in the molecular-dimensioned cavities of fully dehydrated zeolite A of unit-cell composition Cs3Na8HSi12Al12O48 (Cs3-A) have been determined. Cs3-A was exposed to 1025 atm of krypton gas at 400 $^{\circ}C$ for four days, followed by cooling at pressure to encapsulate Kr atoms. The resulting crystal structure of Cs3-A(6Kr) (a = $12.247(2)\AA$, R1 = 0.078, and R2 = 0.085) has been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at $21(1)^{\circ}C$ and 1 atm. In the crystal structure of Cs3-A(6Kr), six Kr atoms per unit cell are distributed over three crystallographically distinct positions: each unit cell contains one Kr atom at Kr(1) on a threefold axis in the sodalite unit, three at Kr(2) opposite four-rings in the large cavity, and two at Kr(3) on threefold axes in the large cavity. Relatively strong interactions of Kr atoms at Kr(1) and Kr(3) with Na+ ions of six-rings are observed: Na-Kr(1) = 3.6(1) $\AA$ and Na-Kr(3) = $3.08(5)\AA.$ In each sodalite unit, one Kr atom at Kr(1) was displaced $0.74\AA$ from the center of the sodalite unit toward a Na+ ion, where it can be polarized by the electrostatic field of the zeolite, avoiding the center of the sodalite unit which by symmetry has no electrostatic field. In each large cavity, five Kr atoms were found, forming a trigonal-bipyramid arrangement with three Kr(2) atoms at equatorial positions and two Kr(3) atoms at axial positions. With various reasonable distances and angles, the existence of Kr5 cluster was proposed (Kr(2)-Kr(3) = $4.78(6)\AA$ and Kr(2)-Kr(2) = $5.94(7)\AA$, Kr(2)-Kr(3)-Kr(2) = 76.9(3), Kr(3)-Kr(2)-Kr(3) = 88(1), and Kr(2)-Kr(2)-Kr(2) = $60^{\circ}).$ These arrangements of the encapsulated Kr atoms in the large cavity are stabilized by alternating dipoles induced on Kr(2) by four-ring oxygens and Kr(3) by six-ring Na+ ions, respectively.

• Korean Journal of Optics and Photonics
• /
• v.11 no.6
• /
• pp.379-384
• /
• 2000

We cooled cesium atoms below the Doppler cooling limit by laser cooling. For this deep cooling of atoms, the laser frequency was shifted by using the Zeeman shift of an absorption line of cesium. The stabilization of the laser frequency was maintained while the laser frequency was shifted by 40 MHz within 2 ms. The lowest temperature of the laser-cooled cesium atoms was $2.2\muK$\pm$0.5$\muK$in this experiment. We measured the temperature of the laser-cooled cesium atoms as a function of the frequency detuuing and the intensity of the cooling laser. The results agreed well with the ones calculated by two-photon laser cooling theory.theory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.119-125
• /
• 2017

We have studied the effects of Ag on the characteristics of $Sn_{43}Bi_{57}Ag_x$(wt%) lead-free solders for photovoltaic ribbon. Ag atoms in the solder formed an alloy phase of Ag3Sn after reacting with some part of Sn atoms, while they did not react with Bi atoms, but decreased the mean size of Bi solid phase and the thickness of solder. When Ag atoms of 3.0 wt% was added to eutectic $Sn_{43}Bi_{57}$(wt%) solder, it showed the optimally useful results that the peel strength of photovoltaic ribbon greatly increased and the sheet resistance of the solder decreased. In the meanwhile, the eutectic $Sn_{43}Bi_{57}$(wt%) solder showed a low melting temperature of $138.9^{\circ}C$, and showed a very similar result regardless of the added amount of Ag atoms.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1998.05b
• /
• pp.273-278
• /
• 1998

The phase stability of atomized U-10wt. ％Mo powder and the thermal compatibility of dispersed fuel meats at 40$0^{\circ}C$ and 50$0^{\circ}C$ have been characterized. Atomized U-10Mo powder has a good \ulcorner-U phase stability, and excellent thermal compatibility with aluminum matrix in a dispersion fuel. It is thought that the good phase stability is related to th large supersaturation of Mo atoms in the atomized particles. The reasons for the excellent thermal compatibility have been considered to be as follows. Before thermal decomposition of ${\gamma}$-U in particle, supersaturated Mo atoms at ${\gamma}$-U grain boundaries inhibit the diffusion of Al atoms. After thermal decomposition of ${\gamma}$-U into ${\gamma}$-U and U$_2$Mo, the intermetallic compound of U$_2$Mo seems to retard the penetration of Al atoms. The penetration mechanisms of aluminum atoms in the atomized particles are assumed be classified as (a) diffusion through the reacted layer between fuel particles and Al matrix leaving a kernel-like unreacted island and (b) diffusion along grain boundaries showing several unreacted islands and more reacted regions.

• Journal of the Korean Society for Heat Treatment
• /
• v.26 no.6
• /
• pp.300-305
• /
• 2013

The effects of solute carbon atoms on the thermal expansion coefficients of ferrite and austenite as well as austenitization behavior were investigated by comparing carbon-free ferrite and carbon-containing ferrite. The thermal expansion coefficients and austenitization start and finish temperatures were measured using a dilatometer. Solute carbon atoms at elevated temperatures above the cementite dissolution temperature (650 K) decreased the thermal expansion coefficients of both ferrite and austenite. In addition, minute amount of carbon atoms dissolved in ferrite stimulated austenite nucleation during continuous heating, resulting in the lower starting temperature of austenitization.