• 제목/요약/키워드: Atomically Dispersed Catalyst

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Electrocatalysis of Selective Chlorine Evolution Reaction: Fundamental Understanding and Catalyst Design

  • Taejung Lim;Jinjong Kim;Sang Hoon Joo
    • Journal of Electrochemical Science and Technology
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    • 제14권2호
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    • pp.105-119
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    • 2023
  • The electrochemical chlorine evolution reaction (CER) is an important electrochemical reaction and has been widely used in chlor-alkali electrolysis, on-site generation of ClO-, and Cl2-mediated electrosynthesis. Although precious metal-based mixed metal oxides (MMOs) have been used as CER catalysts for more than half a century, they intrinsically suffer from a selectivity problem between the CER and parasitic oxygen evolution reaction (OER). Hence, the design of selective CER electrocatalysts is critically important. In this review, we provide an overview of the fundamental issues related to the electrocatalysis of the CER and design strategies for selective CER electrocatalysts. We present experimental and theoretical methods for assessing the active sites of MMO catalysts and the origin of the scaling relationship between the CER and the OER. We discuss kinetic analysis methods to understand the kinetics and mechanisms of CER. Next, we summarize the design strategies for new CER electrocatalysts that can enhance the reactivity of MMO-based catalysts and overcome their scaling relationship, which include the doping of MMO catalysts with foreign metals and the development of non-precious metal-based catalysts and atomically dispersed metal catalysts.

Non-gaseous Plasma Immersion Ion Implantation and Its Applications

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.151-151
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    • 2012
  • A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

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고분산 담지 금촉매 - I. 금의 첨가 효과 및 활성점 생성 - (Highly Dispersed Supported Gold Catalysts -I. Effect of Gold Addition and Active Site Formation-)

  • 안호근;히로오 니이야마
    • 공업화학
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    • 제5권2호
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    • pp.285-294
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    • 1994
  • 몇 종류의 담지 금촉매를 통상의 함침법과 공침법에 의하여 제조하였다. 금입자의 크기, 산소의 흡착량, CO와 NO의 흡착특성 그리고 산화환원 특성 등의 조사를 통하여, 금의 첨가효과와 활성점의 생성에 관해 연구하였다. 함침법에 의한 촉매의 금입자들은 30~100nm 정도로 크고 균일하지 않았으나, 공침법에 의한 촉매는 약 4nm인 초미립자의 상태로 매우 균일하게 분산되어 있었다 $Au/Al_2O_3$촉매에 있어서, 불활성인 $Al_2O_3$에 금의 첨가로 $N_2O$의 분해가 일어났으며, CO의 비가역흡착은 일어나지 않았으나, $O_2$는 원자상으로 비가역흡착하였다. 산소의 흡착점은 활성점이 금입자 표면에 존재하는 원자 전부가 아니라 반구형인 금입자와 담체의 경계면 주위에 한정된 활성점이었다. 저온의 $Al_2O_3$에서는 CO의 가역흡착과 비가역흡착이 일어났지만, 소량의 금의 첨가에 의하여 어느 쪽의 흡착도 약해졌다. $Au/Co_3O_4$촉매에서 CO에 대한 친화성은 $Co_3O_4$에 비해 크게 감소하였다. 환원과정에서는 금의 첨가효과가 보이지 않고, 재산화과정에서 금의 첨가효과가 뚜렷하게 나타나, 첨가된 금은 환원상태의 코발트의 재산화를 촉진시켰다.

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