• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.11
• /
• pp.1345-1352
• /
• 2012

This paper aims to evaluate the low-velocity impact responses and mechanical properties of balsa-wood and urethane-foam core materials and their sandwich panels, which are applied as the impact limiter of a nuclear spent fuel shipping cask. For the urethane-foam core, which is isotropic, tensile, compressive, and shear mechanical tests were conducted. For the balsa-wood core, which is orthotropic and shows different material properties in different orthogonal directions, nine mechanical properties were determined. The impact test specimens for the core material and their sandwich panel were subjected to low-velocity impact loads using an instrumented testing machine at impact energy levels of 1, 3, and 5 J. The experimental results showed that both the urethane-foam and the balsa-wood core except in the growth direction (z-direction) had a similar impact response for the energy absorbing capacity, contact force, and indentation. Furthermore, it was found that the urethane-foam core was suitable as an impact limiter material owing to its resistance to fire and low cost, and the balsa-wood core could also be strongly considered as an impact limiter material for a lightweight nuclear spent fuel shipping cask.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.05a
• /
• pp.127.1-127.1
• /
• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.9 no.1
• /
• pp.49-62
• /
• 2011

Recently, International Atomic Energy Agency and major leading countries in radioactive waste management tend to subdivide the categories of radioactive waste based upon risk-graded approach. In this context, the category of very low level waste has been newly introduced, or optimized management options for this kind of waste have been pursued in many countries. The application of engineered surface landfill type facilities dedicated to dispose of very low level waste has been gradually expanded, and it was analyzed that their design concept of isolation has been much advanced than those of the old fashioned surface trench-type disposal facilities for low and intermediate level waste, which were usually constructed in 1960's. In addition, the management options for very low level waste in major leading countries are varied depending upon and interfaced with the affecting factors such as: national framework for clearance, legal and practical availability of low and intermediate level waste repository and/or non-nuclear waste landfill, public acceptance toward alternative waste management options, and so forth. In this regard, it was concluded that optimized long-term management options for very low level waste in Korea should be also established in a timely manner through comprehensive review and discussions, in preparation of decommissioning of large nuclear facilities in the future, and be implemented in a systematic manner under the framework of national policy and management plan for radioactive waste management.

• Microbiology and Biotechnology Letters
• /
• v.31 no.1
• /
• pp.83-89
• /
• 2003

2,4-Dichlorophenoxyacetic acid (2,4-D) as a widely used herbicide has caused serious environmental problems because of its difficult decomposition in nature. We isolated the strain capable of metabolizing 2,4-D as sole carbon and energy source by an enrichment culture technique from the 2,4-D contaminated soil collected at orchard in Gwangju, Korea. This strain was identified tentatively as Aeromonas sp. NOH2. With this strain, we established the response surface methodology (Box-Behnken Design) to optimize the principle parameters for maximizing biodegradation of 2,4-D such as culture pH, temperature, and nutrient concentration in liquid batch culture. The ranges of parameters were obtained from preliminary works done at our laboratory and chosen as 5.5, 6.5, and 7.5 for pH, 25, 30, and $35^{\circ}C$ for temperature, and 5, 20, and 35 g/1 nutrient concentration. Initial concentration of 2,4-D was 500 ppm and nutrient source was tryptic soy broth. The experimental data were significantly fitted to a second order polynomial equation using multiple regression. The most important parameter influencing 2,4-D degradation and biomass production was nutrient concentration. For 2,4-D degradation, the optimum values of pH and temperature, and nutrient concentration were obtained at pH (6.5), temperature (31.8 to $32.1^{\circ}C$), and nutrient concentration (29.6 to 30.1.0 g/1).

• Proceedings of the KWS Conference
• /
• 2002.10a
• /
• pp.250-254
• /
• 2002

Intergranular corrosion of austenitic stainless steels is a conventional and momentous problem during welding and high temperature use. One of the major reasons for such intergranular corrosion is so-called sensitization, i.e., chromium depletion due to chromium carbide precipitation at grain boundaries. Conventional methods for preventing sensitization of austenitic stainless steels include reduction of carbon content in the material, stabilization of carbon atoms as non-chromium carbides by the addition of titanium, niobium or zirconium, local solution-heat-treatment by laser beam, etc. These methods, however, are not without drawbacks. Recent grain boundary structure studies have demonstrated that grain boundary phenomena strongly depend on the crystallographic nature and atomic structure of the grain boundary, and that grain boundaries with coincidence site lattices are immune to intergranular corrosion. The concept of "grain boundary design and control", which involves a desirable grain boundary character distribution, has been developed as grain boundary engineering. The feasibility of grain boundary engineering has been demonstrated mainly by thermomechanical treatments. In the present study, a thermomechanical treatment was tried to improve the resistance to the sensitization by grain boundary engineering. A type 304 austenitic stainless steel was pre-strained and heat-treated, and then sensitized, varying the parameters (pre-strain, temperature, time, etc.) during the thermomechanical treatment. The grain boundary character distribution was examined by orientation imaging microscopy. The intergranular corrosion resistance was evaluated by electrochemical potentiokinetic reactivation and ferric sulfate-sulfuric acid tests. The sensitivity to intergranular corrosion was reduced by the thermomechanical treatment and indicated a minimum at a small roll-reduction. The frequency of coincidence-site-lattice boundaries indicated a maximum at a small strain. The ferric sulfate-sulfuric acid test showed much smaller corrosion rate in the thermomechanically-treated specimen than in the base material. An excellent intergranular corrosion resistance was obtained by a small strain annealing at a relatively low temperature for long time. The optimum parameters created a uniform distribution of a high frequency of coincidence site lattice boundaries in the specimen where corrosive random boundaries were isolated. The results suggest that the thermomechanical treatment can introduce low energy segments in the grain boundary network by annealing twins and can arrest the percolation of intergranular corrosion from the surface.

• Journal of Radiation Protection and Research
• /
• v.21 no.4
• /
• pp.313-327
• /
• 1996

As an at-reactor(AR) storage method o( spent fuel, there are horizontal concrete module type, metal storage cask type, concrete storage cask type, dual purpose (transportation and storage) cask type and multi-purpose (transportation, storage and disposal) cask type. All other types except multi-purpose one have been already used for AR dry storage of spent fuels after obtaining operation license in various foreign countries. Also the development of multi-purpose type has been continued for operation license. In America, Japan, Germany, Canada, Spain, Switzerland, and Czech Republic, etc., AR dry storage facilities are under operation or on propulsion, and spent fuels are transported to interim storage facility or reprocessing plant after dry storage at reactor temporarily. At Wolsung site, in case of Korea, concrete silo type has already been introduced, and it is believed to be inevitable to store spent fuels at reactor temporarily, considering the reality that storage capacity of spent fuel is approaching to the limit in some nuclear power plants. In this report, the system characteristics, design requirements, technical standards and status of AR storage system, which is suitable for domestic site such as Kori, have been studied. In most cases, the licensed period of storage cask is limited up to 20 years and the integrity of material and maintenance of leaktightness are required during the whole service life.

• Journal of Radiation Protection and Research
• /
• v.37 no.1
• /
• pp.16-24
• /
• 2012

In the present study, a gamma-ray detector and associated signal processing circuit was developed for a side-absorber of a dual-mode Compton camera. The gamma-ray detector was made by optically coupling a CsI(Tl) scintillation crystal to a silicon photodiode. The developed signal processing circuit consists of two parts, i.e., the slow part for energy measurement and the fast part for timing measurement. In the fast part, there are three components: (1) fast shaper, (2) leading-edge discriminator, and (3) TTL-to-NIM logic converter. AC coupling configuration between the detector and front-end electronics (FEE) was used. Because the noise properties of FEE can significantly affect the overall performance of the detection system, some design criteria were presented. The performance of the developed system was evaluated in terms of energy and timing resolutions. The evaluated energy resolution was 12.0% and 15.6% FWHM for 662 and 511 keV peaks, respectively. The evaluated timing resolution was 59.0 ns. In the conclusion, the methods to improve the performance were discussed because the developed gamma-ray detection system showed the performance that could be applicable but not satisfactory in Compton camera application.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.12 no.6
• /
• pp.619-628
• /
• 2019

In this paper, we designed a beta ray sensor for a true random number generator. Instead of biasing the gate of the PMOS feedback transistor to a DC voltage, the current flowing through the PMOS feedback transistor is mirrored through a current bias circuit designed to be insensitive to PVT fluctuations, thereby minimizing fluctuations in the signal voltage of the CSA. In addition, by using the constant current supplied by the BGR (Bandgap Reference) circuit, the signal voltage is charged to the VCOM voltage level, thereby reducing the change in charge time to enable high-speed sensing. The beta ray sensor designed with 0.18㎛ CMOS process shows that the minimum signal voltage and maximum signal voltage of the CSA circuit which are resulted from corner simulation are 205mV and 303mV, respectively. and the minimum and maximum widths of the pulses generated by comparing the output signal through the pulse shaper with the threshold voltage (VTHR) voltage of the comparator, were 0.592㎲ and 1.247㎲, respectively. resulting in high-speed detection of 100kHz. Thus, it is designed to count up to 100 kilo pulses per second.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.327.1-327.1
• /
• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.434-435
• /
• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.