• Korean Journal of Crystallography
• /
• v.17 no.2
• /
• pp.51-54
• /
• 2006

BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.

• Nuclear Engineering and Technology
• /
• v.54 no.11
• /
• pp.4159-4169
• /
• 2022

Hydrogen mitigation using Passive Autocatalytic Recombiners (PARs) has been widely accepted methodology inside reactor containment of accident struck Nuclear Power Plants. They reduce hydrogen concentration inside reactor containment by recombining it with oxygen from containment air on catalyst surfaces at ambient temperatures. Exothermic heat of reaction drives the product steam upwards, establishing natural convection around PAR, thus invoking homogenisation inside containment. CFD models resolving individual catalyst plate channels of PAR provide good insight about temperature and hydrogen recombination. But very thin catalyst plates compared to large dimensions of the enclosures involved result in intensive calculations. Hence, empirical correlations specific to PARs being modelled are often used in integral containment studies. In this work, an experimentally validated CFD model of PAR has been employed for developing an empirical correlation for Indian PAR. For this purpose, detailed parametric study involving different gas mixture variables at PAR inlet has been performed. For each case, respective values of gas mixture variables at recombiner outlet have been tabulated. The obtained data matrix has then been processed using regression analysis to obtain a set of correlations between inlet and outlet variables. The empirical correlation thus developed, can be easily plugged into commercially available CFD software.

• Applied Microscopy
• /
• v.42 no.3
• /
• pp.164-173
• /
• 2012

The relaxor ferroelectric feature in lead-free perovskite oxides, where the dipoles are randomly oriented and they can be feasibly aligned parallel to the external bias, is attracting lots of attention in the field of piezoelectric materials science, since it is one of candidates to replace the toxic lead-based materials that are still being commercially used. However, the origin of relaxor characteristic and its related atomic structure are still ambiguous. In this study, $Na_{1/2}Bi_{1/2}TiO_3$, chosen as a model relaxor system, was found to exhibit a cationic-disordered atomic structure; and furthermore the nonpolar atomic structure and its related oxygen tilting were ascertained via annular bright field imaging skill. We also found that this cationic disordering gives rise to the local formation of atomic vacancies.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.05a
• /
• pp.106-111
• /
• 2003

Tantalum nitride(TaN) films were deposited by atomic layer deposition(ALD) and plasma assisted atomic layer deposition(PAALD). The deposition of the TaN thin film has been performed using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia($NH_3$) as precursors at temperature of $250^{\circ}C$, where the temperature was proven to be ALD window for TaN deposition from our previous experiments. The PAALD deposited TaN film shows better physical properties than thermal ALD deposited TaN film, due to its higher density$(~11.59 g/\textrm{cm}^3$) and lower carbon(~ 3 atomic %) and oxygen(~ 4 atomic %) concentration of impurities.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.81-83
• /
• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.139-139
• /
• 2012

With angle resolved photoemission spectroscopy (ARPES), the surface electronic band structures of Pt3Co (111) and Pt3Ni (111) single crystals are investigated, which allow to study the bonding interaction between chemically absorbed atomic oxygen and its surfaces. The d-band electrons of subsurface TM are separated from the direct chemical bonding with atomic oxygen. That is, the TM does not contribute to direct chemical bonding with oxygen. From the density functional theory (DFT) calculations, it is identified that the main origin of improved oxygen absorption property, i.e. softening of Pt-O bonding, is due to the suppression of Pt surface-states which is generated from change of interlayer potential, i.e. charge polarization, between Pt-top and TM-subsurface. Our results point out the critical roles of subsurface TM in modifying surface electronic structures, which in turn can be utilized to tune surface chemical properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.281.1-281.1
• /
• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Corrosion Science and Technology
• /
• v.11 no.6
• /
• pp.257-262
• /
• 2012

Flow accelerated corrosion (FAC) of the carbon steel piping in nuclear power plants (NPPs) has been major issue in nuclear industry. Rotating cylinder FAC test facility was designed and fabricated and then performance of the facility was evaluated. The facility is very simple in design and economic in fabrication and can be used in material and chemistry screening test. The facility is equipped with on line monitoring of pH, conductivity, dissolved oxygen(DO), and temperature. Fluid velocity is controlled with rotating speed of the cylinder with a test specimen. FAC test of SA106 Gr. B carbon steel under 4 m/s flow velocity was performed with the rotating cylinder at DO concentration of less than 1 ppb and of 1.3 ppm. Also a corrosion test of the carbon steel at static condition, that is at zero fluid velocity, of test specimen and solution was performed at pH from 8 to 10 for comparison with the FAC data. For corrosion test in static condition, the amount of non adherent corrosion product was almost constant at pH ranging from 8 to 10. But adherent corrosion product decreased with increasing pH. This trend is consistent with decrease of Fe solubility with an increase in pH. For FAC test with rotating cylinder FAC test facility, the amount of non adherent corrosion product was also almost same for both DO concentrations. The rotating cylinder FAC test facility will be further improved by redesigning rotating cylinder and FAC specimen geometry for future work.

• Journal of Radiation Protection and Research
• /
• v.34 no.2
• /
• pp.49-54
• /
• 2009

Mitochondrial DNA (mtDNA) deletion is a well-known marker for oxidative stress and aging and also contributes to their unfavorable effects in cultured cells and animal tissues. This study was conducted to investigate the effect of ionizing radiation (IR) on mtDNA deletion and the involvement of reactive oxygen species (ROS) in this process in human lung fibroblast (IMR-90) cells. Young IMR-90 cells at population doubling (PD) 39 were irradiated with $^{137}Cs$ $\gamma$-rays and the intracellular ROS level was determined by 2',7'-dichlorofluorescein diacetate (DCFH-DA) and mtDNA common deletion (4977bp) was detected by nested PCR. Old cells at PD 55 and $H_2O_2$-treated young cells were compared as the positive control. IR increased the intracellular ROS level and mtDNA 4977 bp deletion in IMR-90 cells dose-dependently. The increases of ROS level and mtDNA deletion were also observed in old cells and $H_2O_2$-treated young cells. To confirm the increased ROS level is essential for mtDNA deletion in irradiated cells, the effects of N-acetylcysteine (NAC) on IRinduced ROS and mtDNA deletion were examined. 5 mM NAC significantly attenuated the IR-induced ROS increase and mtDNA deletion. These results suggest that IR induces the mtDNA deletion and this process is mediated by ROS in IMR-90 cells.

• Applied Science and Convergence Technology
• /
• v.23 no.5
• /
• pp.201-210
• /
• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.