Browse > Article

Atomic Structure Analysis of BaO Layers on the Si(100) Surface by Impact-Collision ion Scattering Spectroscopy  

Hwang, Yeon (Department of Materials Science & Engineering, Seoul National University of Technology)
Publication Information
Korean Journal of Crystallography / v.17, no.2, 2006 , pp. 51-54 More about this Journal
Abstract
BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.
Keywords
Citations & Related Records
연도 인용수 순위
  • Reference
1 R. Souda, M. Aono, C. Oshima, S. Otani and Y. Ishizawa, Surf. Sci., 128, L239 (1984)
2 X. Hu, X. Yao, C. A. Peterson, D. Sarid, Z. Yu, J. Wang, D. S. Marshall, J. A. Curless, J. Ramdani, R. Droopad, J. A. Hallmark and W. J. Ooms, Surf. Sci., 457, L391 (2000)   DOI   ScienceOn
3 R. A. McKee, F. J. Walker, J. R. Conner, E. D. Specht and D. E. Zelmon, Appl. Phys. Lett., 59, 782 (1991)   DOI
4 R. Souda, K. Yamamoto, W. Hayami, T. Aizawa, and Y. Ishizawa, Phys. Rev., B51, 4463 (1995)
5 O. S. Den, Surf. Sci., 131, L407 (1983)   DOI   ScienceOn
6 I. Stensgaard, L. C. Feldman, and P. J. Silverman, Surf. Sci., 102, 1 (1981)   DOI   ScienceOn
7 M. Aono, C. Oshima, S. Zaima, S. Otani and Y. Ishizawa, Jpn. J. Appl. Phys., 20, L829 (1981)   DOI
8 R. A. McKee, F. J. Walker, J. R. Conner and R Raj, Appl. Phys. Lett., 63, 2818 (1993)   DOI   ScienceOn
9 R. A. McKee, F. J. Walker and M. F. Chisholm, Phys. Rev. Lett., 81, 3014 (1998)   DOI   ScienceOn