• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.61-70
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• 2023

This paper examines the way of thinking and limitations of physicists regarding the phenomenon of superconductivity and outlines how room-temperature and ambient-pressure superconductors can be developed through the statistical thermodynamic background of the liquid state theory. In hypothesis, the number of electron states should be limited by confining them to a state close to one-Dimension. Simultaneously, the electron-electron interactions should be frequent enough for the electrons to have liquid-like properties. As an example of implementing the hypothesis, our team reports the development of room-temperature and ambient-pressure superconductivity of a material named LK-99 (superconducting compound name developed in the research), whose structure was revealed through numerous experiments with a clue found by chance. Moreover, we summarize the theoretical and experimental basis for the characteristics and discovery of the world's first superconducting material surpassing the critical temperature of 97℃ at atmospheric pressure.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.46 no.spc
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• pp.31-38
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• 2023

In this study, in order to develop a method to efficiently inject essential nutrients necessary for plant growth into wood chips, which are simply used as soil covering materials in the agriculture, landscaping and horticultural industries, the atmospheric pressure dipping method and the vacuum pressure impregnating method are used to improve the plant nutrients injectability and impregnation amount were comparatively analyzed. Nutrient ingredients and 8 major heavy metal contents of wood chips injected with nutrients were analyzed, and soil covering effects were examined by covering wood chips injected with nutrients on soil. Comparing the dipping method and the vacuum pressure impregnation method, it took about 48 hours or more to inject 1,500 g or more of the nutrient aqueous solution into 1 kg of wood chips in the dipping method, but the vacuum pressure impregnation method could be impregnated in about 5 minutes. Components of the impregnated nutrients were detected in proportion to the diluted concentration. As a result of covering the wood chips developed in this study on soil, they showed weakly acidic pH, and the heat insulation and moisturizing effects during the winter season were evaluated to be superior to those of uncovered soil. In the future, wood chips impregnated with nutrients are expected to contribute to the more efficient use of waste wood resources and the long-term supply of nutrients essential for plant growth, reducing excessive use of chemical fertilizers and reducing costs.

• Proceedings of the KSME Conference
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• 2001.06e
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• pp.213-218
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• 2001

The characteristics of the fluid flow and mass transfer in a vertical atmospheric pressure chemical vapor deposition (APCVD) are numerically studied. In order to get the optimal process parameters for the uniformity of deposition on a substrate, Navier-Stokes and energy equations have been solved for the pressure, mass-flow rate and temperature distribution in a CVD reactor. Results show that the thermal boundary condition at the reactor wall has an important effect in the formation of buoyancy-driven secondary cell when radiation effect is considered. Results also show that reduction of the buoyancy effect on the heated reactor improves the uniformity of deposition.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1992.04a
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• pp.329-334
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• 1992

It has been shown that the application of hydrostatic pressure during superplastic forming of 8090A1 can prevent the cavitaiton normally encountered at atmospheric pressure and cavity growth rate factor .eta. in the plane strain state is greater than that in the equibiaxial stress state. .eta. value shows some difference compared to the theoretical value, which seems to be due to the continuous nucletion and coalescence of voids during superplastic deformation. Scatter of measured data of cavity volume fraction seems to be on preferential nucleation of viods on non-uniformly distributed second phase particles in the deforming matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.12-17
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• 1998

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) as group III sources, and tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V sources. Device quality InP heteroepitaxial layers were obtained by using a two-step growth process under atmospheric pressure, involving a growth of an initial nucleation layer at low temperature followed by high temperature annealing and the deposition of epitaxial layer at a growth temperature. The continuity and thickness of nucleation layer were important parameters. The InP layers deposited at 500$^{\circ}$- 55$0^{\circ}C$ are all n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The excellent optical quality was revealed by the 4.4 K photoluminescence (PL) measurement with the full width at half maximum (FWHM) of 4.94 meV. Epitaxial Ga\ulcorner\ulcorner\ulcornerIn\ulcorner\ulcorner\ulcornerAs layers have been deposited on GaAs substrates at 500$^{\circ}$ - 55$0^{\circ}C$ by using InP buffer layers. The composition of GaInAs was determined by optical absorption measurements.

• Journal of the korean Society of Automotive Engineers
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• v.7 no.2
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• pp.55-63
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• 1985

This study is focused on deposition process leading to inefficiency and hot corrosion in fossil fuel-fired furnaces and engines. An improved understanding of the coupled thermodynamics, kinetics, and transport processes governing the deposition rate of inorganic oxides and salts from hot gases containing these compounds can suggest more efficient test strategies and control measures. Accordingly, an optical re-evaporation method for accurately measuring the growth rate of deposits under laboratory burner conditions has been developed. To demonstrate the technique and provide data suitable for theoretical model development, a deliberately simple chemical system and target geometry are used. Potassium sulfate(K$_{2}$SO$_{4}$)is introduced into a premixed propane-air flat flame at atmospheric pressure. The growth rate of $K_{2}$SO$_{4}$ on an electrically heated Pt ribbon is measured by re-evaporation technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.123-126
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• 2001

Multiwalled carbon nanotubes were massively produced by the catalytic reaction of C$_2$H$_2$ - Fe(CO)$\sub$5/ mixture at 750 - 950$^{\circ}C$ in a quartz tube reactor and over quartz substrates. Well-aligned MWNT array grows perpendicular to the quartz tube reactor and the quartz substrates at an average of 60 nm in diameter and up to several thousands of micrometers in length. This method does not require any pretreatment of substrates and CNTs are grown at atmospheric pressure. It could be suitable for mass production of multiwalled nanotubes. Scanning electron microscope and transmission electron microscope images of the nanotubes deposited on the substrates allowed us to monitor the quality of MWNTs grown under different operating conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.134-135
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• 2007

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.253.1-253.1
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• 2014

Plasma technology has been widely used for decontamination, differentiation, and disease treatment. Recently, studies show that plasma has effects on increasing seed germination and plant growth. In spite of increasing number of studies about plasma effects, the interaction between plasma and plants has been rarely informed. In this study, we have analyzed the effects of nonthermal atmospheric pressure plasma on seed germination and growth of coriander (Coriandum sativum), a medicinal plant. We used to Ar, air, and N2 plasma on seed as feeding gases. Plasma was discharged at 0.62 kV, 200 mA, 9.2 W. Seed germination was increased over time when treated with N2 based DBD plasma for exposure times of 30 seconds and 1 minute, everyday. After 7 days, about 80~100% of seeds were germinated in the treatment with N2 based DBD plasma, compared to control (about 40%, only gas treated seeds). In order to elucidate the mechanism of increased germination, we have analyzed characteristics of changes in plant hormones and seed surface structure by SEM.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.