• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.476-476
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• 2012

Although plasma is an efficient means of microbial sterilization, mechanism of plasma effect on microorganisms still needs to be clarified. In addition, a limited number of studies are available on eukaryotic microorganisms such as yeast and fungi in relation to plasma application. Thus, we investigated cellular and molecular aspects of plasma effects on a filamentous fungus, Neurospora crassa by making use of argon plasma jet at atmospheric pressure. The viability and cell morphology of N. crassa spores exposed to plasma were both significantly reduced depending on the exposure time when treated in water. The intracellular genomic DNA content was dramatically reduced in fungal tissues after a plasma treatment and the transcription factor tah-3 was found to be required for fungal tolerance to a harsh plasma environment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1483-1485
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• 2009

Silicon dioxide ($SiO_2$) thin films were deposited using a modified DBD called a "pin-to-plate-type DBD" in order to generate high-density plasmas with a gas mixture of PDMS/$O_2$. The effect of the gas mixture on the physical and chemical properties of $SiO_2$ deposited by the pin-to-plate-type DBD with the mixture of PDMS/$O_2$ was investigated.

• 한국진공학회지
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• 제20권4호
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• pp.258-265
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• 2011

대기압에서 산소 플라즈마가 생성될 때 생기는 화학종의 밀도와 전자 온도를 정성적으로 분석하기 위하여 전산모사 방법 중 하나인 공간 평균 모델을 개발하였다. 본 논문에서는 플라즈마 바늘(plasma needle) 장치를 이용하여 전산모사를 수행하였다. 생성된 화학종 중, O, $O_3$, $O_2*$, ${O_2}^+$ 순서대로 높은 밀도를 가지고, 전자 에너지의 대부분이 산소 분자와의 이온화 과정과 여기화 과정에서 소모가 된다. 입력 파워가 증가할 때 대다수의 화학종의 밀도는 입력 파워가 증가한 비율만큼 증가하고, 산소 가스의 온도가 300 K에서 700 K으로 증가할 때는 오존 생성을 위한 삼체 충돌 현상이 약해져 오존 밀도가 감소한다. 방전 공간의 표면적에 대한 부피 비 또한 플라즈마 밀도와 전자 온도에 영향을 준다.

• Nuclear Engineering and Technology
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• 제6권4호
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• pp.253-259
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• 1974

펄스된 이온화상자(PIC)의 출력 신호전압이 전자밀도가 $10^{13}$-$10^{17}$ m$^{-3}$인 플라즈마들에 대해 측정되었다. 이 PIC 기술치 한 응용으로서 이체 재결합 상수들이 PIC의 출력신호전압으로 측정된 전자밀도들로부터 구해졌다. 압력의 함수로서의 이 값들은 이론적인 예측과 잘 부합하며, 수치는 300$^{\circ}$K에 있는 1-10기압의 $^3$He 플라즈마에 대해 5$\times$$10^{-14}$ -3$\times$$10^{-13}$ ㎥/sec의 범위에 있다.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.544-545
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• 2013

Recently, low-temperature atmospheric-pressure plasmas have been investigated [1,2] for biomedical applications and surface treatments. Experiments for improving hydrophilicity of stainless steel (SUS 304) plate with atmospheric microwave argon and H2O2 mixture plasma jet [3] were carried out and experimental measurements and plasma simulations were conducted for investigating the characteristics of plasma for the process. After 30 s of low power (under 10 W) and low temperature (under $50^{\circ}C$) plasma treatment, the water contact angle decreased rapidly to around $10^{\circ}$ from $75^{\circ}$ and was maintained under $30^{\circ}$ for a day (24 hours). The surface free energy, calculated from the contact angles, increased. The chemical properties of the surface were examined by X-ray Photoelectron Spectroscopy (XPS) and the surface morphology and roughness were examined by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. The characteristics of plasma sources with several frequencies were investigated by Optical Emission Spectroscopy (OES) measurement and one-dimensional Particle-in-Cell (PIC) simulation and zero-dimensional global simulation [4]. The relation between plasma components and the efficacy of the surface modification were discussed.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 한국대기환경학회지
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• 제23권6호
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• pp.727-733
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• 2007

In this study, a newly developed biotrickling system, combined with a non-thermal plasma reactor, was investigated to effectively treat gaseous contaminants such as VOCs (Volatile Organic Compounds). Three kinds of non-thermal plasmas (NTPs) such as a rod type dielectric barrier discharge (DBD) plasma, a packed bead type DBD plasma and a gliding arc (GA) plasma, were tested and compared in terms of power consumption. The rod type DBD plasma was selected as one for integration with biotrickling system due to its relatively high VOC removal efficiency, low power consumption and low pressure drop. Toluene and xylene as representatives of VOCs were used as test gases. The experiment results showed that the efficiency of biotrickling system was especially very low at the high gas concentration and high flow rate and the removal efficiencies of VOCs were considerably enhanced in the biotrickling system, when the DBD plasma was worked in front of that even at the high gas concentration and high flow rate.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.138-144
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• 2016

The discharge characteristics of pulse-driven coplanar micro barrier discharges for an ultraviolet (UV) light source using Ne-Xe mixture have been investigated using a two-dimensional fluid simulation at near-atmospheric pressure. The densities of electrons, the radiative excited states, the metastable excited states, and the power loss are investigated with the variations of gas pressure and the gap distance. With a fixed gap distance, the number of the radiative states $Xe^*(^3P_1)$ increases with the increasing driving voltage, but this number shows weak dependency on the gas when that pressure is over 400 Torr. However, the number of the radiative states increases with the increase of the gap distance at a fixed voltage, while the power loss decreases. Therefore, a long gap discharge has higher efficiency for UV generation than does a short gap discharge. A slight change in the electrode tilt angle enhances the number of radiative species 2 or 3 times with the same operation conditions. Therefore, the intensity and efficiency of the UV light source can be controlled independently by changing the gap distance and the electrode structure.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.