• 한국세라믹학회지
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• 제30권4호
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• pp.279-288
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• 1993

A study on calcination and reduction of AUC(ammonium uranyl carbonate, (NH4)4UO2(CO3)3) has been carried out by using TG-DTA in N2, air and H2 atmospheres, respectively. Phases of various intermediate obtained during thermal analysis of AUC in different atmospheres were confirmed by XRD. Powder characteristics of each intermediate were investigated by measuring particle size and specific surface area, and also observed by SEM. As a results, regardless of applied atmosphere AUC was calcined into amorphous UO3, which was converted to $\alpha$-U3O8 Via $\alpha$-UO3 in both H2 and N2 atmosphere, but directly into $\alpha$-UO3 in air atmosphere. Further reduction of U3O8 was only detectable in hydrogen atmosphere. During calcination and reduction, average particle size was reduced to less than 30% of original value without morphology change. Specific surface area was dramatically increased with release of NH3, CO2 and H2O from AUC powder and reached maximum value around 25$0^{\circ}C$, and then gradually decreased with the increase of temperature due to sintering effect of uranium oxides such as UO3 and U3O8. It was also found that the change of average crystallite size and pore size were closely related to the changes of specific surface area of uranium oxides.

• 한국산학기술학회논문지
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• 제20권3호
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• pp.29-34
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• 2019

SiC는 큰 에너지 밴드 갭을 갖고, 불순물 도핑에 의해 p형 및 n형 전도의 제어가 용이해서 고온용 전자부품 소재로 활용이 가능한 재료이다. 특히 $N_2$ 분위기, $2000^{\circ}C$에서 ${\beta}-SiC$ 분말로부터 제조한 다공질 n형 SiC 반도체의 경우, $800{\sim}1000^{\circ}C$에서의 도전율 값이 단결정 SiC와 비교해서 비슷하거나 오히려 높은 값을 나타내었으며, 반면에 열전도율은 치밀한 SiC 세라믹스와 비교시 1/10~1/30 정도로 낮은 값을 나타내었다. 본 연구에서는 소결온도를 낮추기 위해 n형 ${\beta}-SiC$에 함침 시킨 polycarbosilane (PCS)의 열분해에 의한 반응소결 공정 ($1400{\sim}1600^{\circ}C$)으로 다공질 소결체를 제작하였다. 함침 및 소결공정($N_2$ 분위기, $1600^{\circ}C$, 3시간)을 반복함에 따라 상대밀도는 크게 증가하지 않았지만 Seebeck 계수 및 도전율은 크게 증가하였다. 본 연구에서의 열전변환 효율을 반영하는 power factor는 고온에서 상압소결 공정으로 제작한 다공질 SiC 반도체에 비해 1/100~1/10 정도 작게 나타났지만, 미세구조 및 캐리어 밀도를 정밀하게 제어하면, 본 연구에서의 반응소결 공정으로 제작한 SiC 반도체의 열전물성은 크게 향상될 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• 한국세라믹학회지
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• 제21권4호
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• pp.361-365
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• 1984

This study has been carried out to sinter silicon nitride with additives and to show the effect of surface finishments on its strength and Weibull modulus which are two most important factors for its applications into structural ceramics. Silicon nitride was sintered with the additions of $Al_2O_3$ and $Y_2O_3$ under pressureless cond-ition. The optimum properties were obtained by sintering at 1, 75$0^{\circ}C$ for 3hrs under $N_2$ atmosphere and the strength showed 6, 500kg/$cm^2$ at room temperature and 3, 300kg/$cm^2$ at 120$0^{\circ}C$. The effects of surface treatment on the strength of sintered $Si_3N_4$ were studied and the results showed that fine surface treatment increased the strength by up to 50% The Weibull analysis showed that its modulus was increased with increasing fineness of surface finishments. It was concluded that the mechanical properties of sintered silicon nitride could be improved by fine surface grinding which implied the brittle-fracture nature of sintered silicon nitride.

• 한국세라믹학회지
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• 제29권7호
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• pp.577-585
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• 1992

TiB2 and TiC were prepared from the mixture of metal titanium, boron and graphite powders in Argon atmosphere by Self-propagating High-temperature Synthesis method. The sintered properties of TiB2-TiC composite as a function of TiC content and sintering temperature were investigated in TiB2 matrix. The sintered properties were the most excellent at 10 wt% TiC content in TiB2-TiC composite. The relative density, M.O.R strength, hardness and fracture toughness of TiB2-10 wt% TiC composite sintered at 190$0^{\circ}C$ for 90 min by hot-pressing under the pressure of 30 MPa were 98.6%, 634 MPa, 2128.1 kg/$\textrm{mm}^2$ and 4.09 MN/m3/2, respectively.

• 한국세라믹학회지
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• 제38권4호
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• pp.380-387
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• 2001

140$0^{\circ}C$ 환원 분위기(질소-수소) 조건에서 열처리하여 반도성 SrTiO$_3$하소분말을 제조하였다. 하소분말을 이용하여 135$0^{\circ}C$에서 2시간동안 상압 소결하여 소결체를 제조하였으며, 이때 소결 분위기에 따른 소결체 입계의 전기적 특성을 고찰하였다. 이들 소결체는 전형적인 바리스터 특성을 나타내었으며, 특히 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라서 소결체의 문턱 전압, 입계 비저항 그리고 입계 전위 장벽은 430V/cm, 10MΩ.cm 그리고 2.0$\times$$10^{-3}$eV로부터 1000V/cm 이상, 240 MΩ.m 그리고 1.1eV로 변하였다.

• 한국분말재료학회지
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• 제3권2호
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• pp.97-103
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• 1996

The densification of the compacts of pure Co, Fe+50%.Co and Fe+25% Co sintered under H$_2$ gas or in vacuum was investigated. The effects of AL, Nb, Ti, and V additions on the densification were also studied. The sintered compact of Co was fully-dense when the density of the compact was lower than $Dg^c$. However, above $Dg^{c}$, it was never fully-dense regardless of sintering atmosphere, temperature, and time. The densification of sintered compacts of Fe-50% Co and Fe-25% Co were always incomplete. While the addition of AL made all compacts fully-dense, the addition of Ti was effective for the compacts of Co and Fe-25% Co. V was effective only for the Fe-25% Co. These results tell us that the particle size of Co powder, the amount of Fe, and the amount of additives forming stable oxides play on important role for the complete densification. Therefore it is desirable to reduce or eliminate the equilibrium pressure of H$_{2}$O or CO in isolated pores to obtain a fully-dense sintered compact.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• 한국세라믹학회지
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• 제27권4호
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• pp.553-559
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• 1990

The nonuniform shrinkage has been investigaed in pressureless sintering of $\alpha$-SiC, where born carbide and phenolic resin as a carbon source are used as densification aids. Compacted specimens, prepared from the granulated powder, were sintered at 215$0^{\circ}C$ for 30min in Ar atmosphere. Using the fresh and unseasoned graphite crucible, the upwarped specimens were obtained, while specimens were uniformly shrunk in the seasoned crucible. This effect is mainly due to the nonuniform distributjion of boron carbide during heatig, which originates in the reaction of boron carbide with CO gas, providing from the result of SiO2 reduction with carbon during heating.

• 한국분말재료학회지
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• 제4권3호
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• pp.214-221
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• 1997

The densification and grain growth mechanisms of $UO_{2+x}$ in $H_2$ and in $CO_2$ have been investigated. Uranium dioxide powder compacts were sintered at 1$700^{\circ}C$ in $H_2$ or at 110$0^{\circ}C$ in $CO_2$ for various times from 0.5 h to 16 h. The grain size and density of the specimens were measured. From the measured data, the mechanisms of the densification and grain growth were determined by use of available kinetic equations which express the relations between densification and grain growth. In both atmospheres, it has been found that the densification was controlled by the lattice diffusion and the grain growth by the surface diffusion of atoms around pores. It appears that the surface diffusivity as well as the lattice diffusivity increase considerably with the increase in O/U ratio in the specimen.