• 한국군사과학기술학회지
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• 제9권4호
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• pp.97-103
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• 2006

A synthetic infrared image can be effectively utilized in various fields such as the recognition and tracking of targets as long as its quality is good enough to reflect the real situations. One way to improve its quality is to use the reference atmosphere which best describes atmospheric properties of regional areas. The east asian reference atmosphere has been developed to represent atmospheric properties of the east asia including Korean peninsula. However, few research has been conducted to examine the effects of this east asian reference atmosphere on the modeling and simulation. In this regard, this paper analyzes the effects of the east asian reference atmosphere on a synthetic infrared image. The research compares the atmospheric transmittance, the surface temperature, and the radiance obtained by using the east asian reference atmosphere with those of the midlatitude reference atmosphere which has been widely applied in the east asia. The results show that the differences of the atmospheric transmittance, the surface temperature, and the radiance between the east asian reference atmosphere and the midlatitude reference atmosphere are significant especially during the daytime. Therefore, it is recommended to apply the east asian reference atmosphere for generating a synthetic infrared image with targets in the east asia.

• 한국전산유체공학회지
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• 제22권1호
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• pp.88-94
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• 2017

The IR signal entering into a sensor is composed of the following components: the self-emitted component directly from the object surface, the reflected components of the solar and sky irradiance at the object surface, and the scattered component by the atmosphere without reference to any object surfaces. The self-emitted and reflected components from the object can be lowered by the atmospheric layer between the object and the IR sensor. The principle factors influencing the atmospheric transmittance are the air temperature, the relative humidity and the observation distance. Previous studies on IR signal transmission through the atmosphere are focused on uniform atmospheric conditions and the non-uniform nature of the atmosphere was not properly treated in modeling. In this study, we use the local atmospheric transmittance to simulate the non-uniform atmosphere in analyzing the IR signal from the object surface. The results show that the nonuniform analysis of the atmosphere becomes more important as the wavelength of IR signal increases.

• 한국군사과학기술학회지
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• 제13권2호
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• pp.320-327
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• 2010

The IR signature data of a ship is mainly affected by location, meteorological conditions(atmosphere temperature, wind direction and velocity, humidity etc.), atmospheric transmittance, solar position and ship surface temperature etc. The IR signatures received by a remote sensor at a given temperature and wavelength region is consisted of the self-emitted component directly from the object surface, the reflected component of the solar irradiation at the object surface, and the scattered component by the atmosphere without ever reaching the object surface. Computer simulations for prediction of the IR signatures of ships are very useful to examine the effects of various sensor positions. In this paper, we have acquired the IR signature for different sensor positions by using computer program for prediction of the IR signatures. The numerical results show that the IR signature contrast as compared to the background sea considering the meteorological conditions, solar and sky irradiations.

• 열처리공학회지
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• 제30권1호
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• pp.1-5
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• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• 대한전기학회논문지
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• 제41권3호
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• pp.261-266
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• 1992

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.241-244
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• 2012

Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at $550^{\circ}C$ in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about $8{\sim}10{\times}10^{-3}{\Omega}{\cdot}cm$, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1433-1435
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• 1997

ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.

• 한국분말재료학회지
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• 제28권4호
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• pp.325-330
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• 2021

In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125-205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIP-ZnS was obtained under the optimal conditions (1010℃, 205 MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

• 한국세라믹학회지
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• 제24권3호
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• pp.277-281
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• 1987

The various contents of MgF2 from 0 to 12.5wt% are studied in the AlF3-(Mg＋Sr＋Ba)F2-P2O5 system for the effects of various properties in glasses and the atmosphere of melting was controlled by N2 and Ar gas respectively. Density, refractive index, infrared transmission, thermal conductivity and thermal expansion coefficient of glasses are determined. Density, refractive index and thermal conductivity are decreased, micro-hardness and thermal expansion coefficient are increased according to the increasing of MgF2 contents. Infrared transmittance decreases with increasing the MgF2 contents and it slightly dropped by air than N2 and Ar atmosphere. Other properties are not influenced by atmosphere control.