• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Transactions on Electrical and Electronic Materials
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• v.10 no.3
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• pp.80-84
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• 2009

The microstructure, voltage-current, capacitance-voltage, and dielectric characteristics of CCT doped Zn/Pr-based varistors were investigated at different sintering temperatures. As the sintering temperature increased, the average grain size increased from 4.3 to 5.1 ${\mu}m$ and the sintered density was saturated at 5.81 g $cm^{-3}$. As the sintering temperature increased, the breakdown field decreased from 7,532 to 5,882 V $cm^{-1}$ and the nonlinear coefficient decreased from 46 to 34. As the sintering temperature increased, the donor density, density of interface states, and barrier height decreased in the range of (9.06-7.24)${\times}10^{17}\;cm^{-3}$, (3.05-2.56)${\times}10^{12}\;cm^{-2}$, and 1.1-0.95 eV, respectively. The dielectric constant exhibited relatively low value in the range of 529.1-610.3, whereas the $tan{\delta}$ exhibited a high value in the range of 0.0910-0.1053.

• Resources Recycling
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• v.27 no.4
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• pp.50-56
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• 2018

For the purpose of optimizing the counter current extraction process for separation of [Pr, Nd, Sm] group and [La] in mixed solution using Cyanex 572 as an extractant, the theory of Xu Guangxian was derived for calculating the optimized extraction factors. From the basic batch test result, the separation factor was 16.80 at extraction process and 21.48 at scrubbing process, and the loading capacity of 1.0 M Cyanex 572 was 0.12 M of rare earth element. The process parameters such as the stage number at extraction and scrubbing process, the flow rate ratio of feed and solvent solution can be calculated using an equation of optimum extraction ratio proposed by Xu Guangxian. From the result of calculation, 7 extraction stages and 4 scrubbing stages were required for rare earth separation, and the flow rate ratio of feed solution, solvent solution, scrubbing solution was 25 : 5.67 : 12.27.

• Tuberculosis and Respiratory Diseases
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• v.52 no.3
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• pp.230-240
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• 2002

Background : The majority of chemotherapy-treated small cell lung cancers(SCLC) patients eventually recur. Although many patients are in excellent physical condition at the time of recurrence, few drugs or drug combinations are capable of effecting a tumor regression in this setting. Topotecan, a topoisomerase I inhibitor, is one of the more widely studied single afents in SCLC. The aim of this study was to determine the response rate, survival and toxicity of topotecan as a second line traeatment SCLC. Materials and Methods : 19 patients with measurable SCLC, progressive during the first line chemotherapy (9 cases) or recurrent after the first line chemotherpy(10 cases), were enrolled in this study. Topotecan was administered as a 30-minute daily infusion at a dose of 1.5mg/$m^2$ for 5 consecutive days, every 3 weeks. Results : The overall response rate was 26.3%(5/19, CR 2, PR 3, SD 3, PD 11). The median survival was 24 weeks. The response rate and survival were poor in the nonresponders during first chemotherapy, those who were refractory to the first chemotherapy(recurrent within 3 months after completion of first chemotherapy) and extensive disease, but the results were not statistically significant. The toxicities were mainly hematologic and anemia grade III 1/90, leukopenia grade III 6/90 IV 4/90, thrombocytopenia grade III 1/90 IV 1/90, vomiting grade III 1/90 of cycles were occurred. There was no treatment-related deaths due to severe myelosuppression. Conclusion : Topotecan can be an active second line chemotherapeutic agent for treating SCLC.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.170-173
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• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Steel and Composite Structures
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• v.8 no.4
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• pp.265-280
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• 2008

An investigation on the combined effect of foundation type, foundation flexibility, axial load and PR (semi-rigid) connections on the natural frequencies of steel frames is presented. These effects were investigated using a suitable modified FE program for cases where the foundation flexibility, foundation connectivity, and semi-rigid connections could be treated as equivalent linear springs. The effect of axial load on the natural frequency of a structure was found to be significant for slender structures subjected to high axial loads. In general, if columns of medium slenderness are designed without consideration of axial load effects, the frequency of the structure will be overestimated. Studies on the 3-story Los Angeles PR SAC frame indicate that the assumption of rigid connections at beam-column and column-base interfaces, as well as the assumption of a rigid foundation, can lead to significant errors if simplified design procedures are used. These errors in an equivalent static analysis are expected to lead to even more serious problems when considering the effect of higher modes under a non-linear dynamic analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.346-349
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• 2002

Ferroelectric $Bi_{4-x}Nd_{x}Ti_{3}O_{12}(BNdT)$ thin films with the composition(x=0.75) were prepared on $Pt/Ti/SiO_{2}/Si(100)$ substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectirc constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was $56{\mu}C/cm^{2}$ at an applied voltage of 5V. In fatigue characteristics value remained costant up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.773-776
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• 2009

In this paper, new concept of the diesel fuel processing is introduced for the stable operation of solid oxide fuel cells (SOFCs). Heavier hydrocarbons than $CH_4$, such as ethylene, ethane, propane, and etc., induce the carbon deposition on anode of SOFCs. In the reformate of heavy hydrocarbons (diesel, gasoline, kerosene, and JP-8), concentration of ethylene is usually higher than low hydrocarbons such as ethane, propane, and butane. So, removal of low hydrocarbons (over C1-hydrocarbons), especially ethylene, at the reformate gases is important for stable operation of SOFCs. New methodology as named "post-reformer" is introduced for removing the low hydrocarbons at the reformate gas stream. Catalyst of the NECS-PR4 is selected for post-reforming catalyst because the catalyst of NECS-PR4 shows the high selectivity for removing low hydrocarbons and achieving the high reforming efficiency. The diesel reformer and post-reformer are continuously operated for about 200 hours as integrated mode. The reforming performance is not degraded and low hydrocarbons in the diesel reformate are completely removed.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.696-702
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• 2004

Lifetime of excited electronic states inside the 4f configuration of rare-earth elements embedded in chalcogenide glasses is very sensitive to medium-range structural changes of the host glasses. We have measured lifetimes of the 1.6$\mu\textrm{m}$ emission originating from Pr$\^$3+/ : ($^3$F$_3$, $^3$F$_4$)\longrightarrow$^3$H$_4$ transition in amorphous chalcogenide samples consisting of Ge, Sb, and Se elements. The measured lifetimes fumed out to have their maximum at the mean coordination number of -2.67, which arises accordingly from structural changes of the host glasses from 2 dimensional layers to 3 dimensional networks. This new finding supports that the so-called topological structure model together with chemically ordered network model is adequate to explain relationship between the emission properties of rare-earth elements and the medium-range structures of amorphous chalcogenide hosts with a large covalent bond nature. Thus, it is validated to predict site distribution and lifetime of rare-earth elements doped in chalcogenide glasses simply based on their mean coordination number.