• 한국세라믹학회지
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• 제29권11호
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1329-1330
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• 2007

Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material. Actually, the performance properties have been improved surprisingly. However, crystallization time was as long as ever for amorphization time. In this paper, we studied in order to make set operation time and reset operation voltage reduced. In the present work, by alloying Sb in $Ge_{1}Se_{1}Te_{2}$. we could confirm that improved its set operation time and reset operation voltage. As a result, the method of Sb-alloyed $Ge_{1}Se_{1}Te_{2}$ can be solution to decrease the set operation time and reset operation voltage.

• 한국진공학회지
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• 제11권1호
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• pp.28-34
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• 2002

진공 증착한 $Sb_{2-x}Bi_xTe_3$ 박막은 Bi 농도에 관계없이 비정질 형태로 성장되었고, XPS 분석 결과 증착 물질과 거의 유사한 조성을 가짐을 알 수 있었다. 또한 박막의 광학적, 전기적 특성을 설명하기 위해 여러 미세구조 파라미터들을 계산하였다. 한편, 박막 내 Bi 농도가 증가함에 따라 전기 비저항은 급격히 감소하였고, 특히 높은 Bi 농도(x=1.0)에서는 전도 특성이 p-type에서 n-type으로 변화되었다. 또한 $Sb_{2-x}Bi_xTe_3$ 박막의 굴절 지수 및 광학적 밴드 갭은 Bi 농도에 따라 증가하였다.

• 한국광학회지
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• 제12권5호
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• pp.394-400
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• 2001

다층 박막에서의 빛의 반사와 흡수 및 열전달 방정식을 수치해석적으로 풀어 광기록매체용 다층 박막의 광학적 특성과 열전달 특성을 알아보고 이 두 특성들을 모두 고려하여 광기록에 적합한 레이저의 출력 및 지속시간, 다층 박막 구조 상수를 제시하였다. 그 결과 레이저는 650 nm 파장을 기준으로 출력 18mW, 지속 시간 60 nm가 적당하였으며 박막 구조 상수는 ZnS-SiO$_2$140nm, Ge-Sb-Te 20 nm, ZnS-SiO$_2$20~30nm, Al-alloy 100~150 nm가 적당하였다.

• 한국재료학회지
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• 제31권8호
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.404-409
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• 2011

An amorphous $Ge_2Sb_2Te_5$ thin film is one of the most commonly used materials for phase-change data storage. In this study, $Au_x(Ge_2Sb_2Te_5)_{1-x}$ thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the $Ge_2Sb_2Te_5$ film is largely improved by adding Au.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.69-69
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• 2009

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sh-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sh-doped Ge-Se-Te thin films.

• 전기화학회지
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• 제23권1호
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• pp.18-23
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• 2020

Antimony telluride (Sb_xTe_y) thin films were synthesized by an electrodeposition method with a control of applied potential at room temperature. Characterization of electrical and thermoelectric properties such as conductivity, Seebeck coefficient, and power factor (P.F.) were conducted as a function of the chemical composition of the electrodeposited films. Morphology of thin films were dense and uniform and the composition was tailored from 25 to 60 at.% of the Sb content by altering the applied potential from -0.13 to -0.27 V (vs. SCE). The conductivity of the films were ranged from 2 × 10^-4 ~ 5 × 10^-1 S/cm indicating their amorphous behavior. The meaured Seebeck coefficient of films were relatively high compared to that of bulk single cyrstal Sb_xTe_y due to their low carrier concentration. The variation of the Seebeck coefficient of the films was also related to the change of chemical composition, showing the power factor of ~10 ㎼/mK².

• 한국분말재료학회지
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• 제18권5호
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• pp.449-455
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• 2011

In this study, p-type $(AgSbTe_2)_{15}(GeTe)_{85}$: TAGS-85 compound powders were prepared by gas atomization process, and then their microstructures and mechanical properties were investigated. The fabricated powders were of spherical shape, had clean surface, and illustrated fine microstructure and homogeneous $AgSbTe_2$ + GeTe solid solution. Powder X-ray diffraction results revealed that the crystal structure of the TAGS-85 sample was single rhombohedral GeTe phase, which with a space group $R_{3m}$. The grain size of the powder particles increased while the micro Vickers hardness decreased with increasing annealing temperature within the range of 573 K and 723 K due to grain growth and loss of Te. In addition, the crystal structure of the powder went through a phase transformation from rhombohedral ($R_{3m}$) at low-temperature to cubic ($F_{m-3m}$) at high-temperature with increasing annealing temperature. The micro Vickers hardness of the as-atomized powder was around 165 Hv, while it decreased gradually to 130 Hv after annealing at 673K, which is still higher than most other fabrication processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.138-139
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• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.