• Transactions of the Society of Information Storage Systems
• /
• v.4 no.1
• /
• pp.1-5
• /
• 2008

Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.2
• /
• pp.128-133
• /
• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Korean Journal of Optics and Photonics
• /
• v.18 no.5
• /
• pp.351-361
• /
• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Economic and Environmental Geology
• /
• v.25 no.3
• /
• pp.317-336
• /
• 1992

The garden soils, main road dusts, residential road dusts, and playground soils/dusts of Seoul, Geumsan, Onsan, and Taebaek areas were analyzed in order to investigate the level of heavy metal pollution by urbanization and industrialization. The soil pH is in the range of 5.48~8.40 and was generally neutral. The color of soils and dusts is mainly Raw Umber to dark greyish Raw Umber. Some samples from Taebaek city, a coal mining area, showed a deep black color due to contamination by coal dusts. Major minerals of the dusts and soils are quartz, feldspars, and micas, reflecting the composition of the parent rocks. However, pyrite was found as a major mineral in the samples of industrial road dusts of Onsan, a smelting area, and resicential road dusts of Taebaek. Thus, the high level of heavy metals in mining and smelting areas can be explained with the sulfide minerals. The mode of occurences of heavy metals in Seoul, a comprehensive urbanized area, were related to the metallic pollutants and organic materials through observation by scanning eletron microscopy. In main road and residential road dusts of Onsan area, Cd, Zn, and Cu were extremely high. Some industrial road and residential road dusts of Seoul area showed high Cu, Zn, and Pb contents, wereas some garden soils and residential road dusts of Taebaek area were high in As content. In general, the heavy metal contents in dust samples were two to three times higher than those in soil samples. Main road dust samples were the most reflective from the discriminant analysis of multi-element data. Cadmium, Sb, and Se in Onsan area, As in Taebaek area, Pb and Te in Seoul area were most characteristic in discriminating the studied areas. Therefore, Cd in smelting areas, As in coal mining areas, and Pb in metropolitan areas can be suggested as the characteristic elements of each pollution pattern. The dispersion of heavy metal elements in urban areas tends to orignate in main roads and deposit in garden soils through the atmosphere and residential roads. The heavy metal contamination in Seoul is characteristic in areas with high population, factory, road, and traffic decsities. Heavy metal contents are high in the vicinity of smelters in Onsan area and are decayed to background levels from one kilometer away from the smelters.

• Nuclear Engineering and Technology
• /
• v.38 no.2
• /
• pp.163-174
• /
• 2006

The $Ph{\acute{e}}bus$ FP project is an international reactor safety project. Its main objective is to study the release, transport and retention of fission products in a severe accident of a light water reactor (LWR). The FPT4 test was performed with a fuel debris bed geometry, to look at late phase core degradation and the releases of low volatile fission products and actinides. Post Test Analyses results indicate that releases of noble gases (Xe, Kr) and high-volatile fission products (Cs, I) were nearly complete and comparable to those obtained during $Ph{\acute{e}}bus$ tests performed with a fuel bundle geometry (FPT1, FPT2). Volatile fission products such as Mo, Te, Rb, Sb were released significantly as in previous tests. Ba integral release was greater than that observed during FPT1. Release of Ru was comparable to that observed during FPT1 and FPT2. As in other $Ph{\acute{e}}bus$ tests, the Ru distribution suggests Ru volatilization followed by fast redeposition in the fuelled section. The similar release fraction for all lanthanides and fuel elements suggests the released fuel particles deposited onto the plenum surfaces. A blockage by molten material induced a steam by-pass which may explain some of the low releases. The revaporisation testing under different atmospheres (pure steam, $H_2/N_2$ and steam /$H_2$) and up to $1000^{\circ}C$ was performed on samples from the first upper plenum. These showed high releases of Cs for all the atmospheres tested. However, different kinetics of revaporisation were observed depending on the gas composition and temperature. Besides Cs, significant revaporisations of other elements were observed: e.g. Ag under reducing conditions, Cd and Sn in steam-containing atmospheres. Revaporisation of small amounts of fuel was also observed in pure steam atmosphere.

• Biomolecules & Therapeutics
• /
• v.31 no.1
• /
• pp.127-138
• /
• 2023

Glycogen synthase kinase-3β (GSK-3β) is an important serine/threonine kinase that implicates in multiple cellular processes and links with the neurodegenerative diseases including Alzheimer's disease (AD). In this study, structure-based virtual screening was performed to search database for compounds targeting GSK-3β from Enamine's screening collection. Of the top-ranked compounds, 7 primary hits underwent a luminescent kinase assay and a cell assay using human neuroblastoma SH-SY5Y cells expressing Tau repeat domain (Tau_RD) with pro-aggregant mutation ΔK280. In the kinase assay for these 7 compounds, residual GSK-3β activities ranged from 36.1% to 90.0% were detected at the IC₅₀ of SB-216763. In the cell assay, only compounds VB-030 and VB-037 reduced Tau aggregation in SH-SY5Y cells expressing ΔK280 Tau_RD-DsRed folding reporter. In SH-SY5Y cells expressing ΔK280 Tau_RD, neither VB-030 nor VB-037 increased expression of GSK-3α Ser21 or GSK-3β Ser9. Among extracellular signal-regulated kinase (ERK), AKT serine/threonine kinase 1 (AKT), mitogen-activated protein kinase 14 (P38) and mitogenactivated protein kinase 8 (JNK) which modulate Tau phosphorylation, VB-037 attenuated active phosphorylation of P38 Thr180/ Tyr182, whereas VB-030 had no effect on the phosphorylation status of ERK, AKT, P38 or JNK. However, both VB-030 and VB-037 reduced endogenous Tau phosphorylation at Ser202, Thr231, Ser396 and Ser404 in neuronally differentiated SH-SY5Y expressing ΔK280 Tau_RD. In addition, VB-030 and VB-037 further improved neuronal survival and/or neurite length and branch in mouse hippocampal primary culture under Tau cytotoxicity. Overall, through inhibiting GSK-3β kinase activity and/or p-P38 (Thr180/Tyr182), both compounds may serve as promising candidates to reduce Tau aggregation/cytotoxicity for AD treatment.