• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.535-538
• /
• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.580-583
• /
• 2008

In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04b
• /
• pp.85-88
• /
• 2002

We have carried out two-beam interference experiments to form holographic gratings on chalcogenide $Ag/As_{40}Se_{15}S_{35}Ge_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by +1st order intensity and formed grating structure was investigated using atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.107-107
• /
• 2010

In this study, we have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Ag/AsGeSeS thin films with the incident laser beam wavelength for the improvement of the polarization diffraction grating efficiency. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity. The result is shown that the diffraction efficiency of Ag/AsGeSeS double layer thin film for the Ag thickness, the maximum grating diffraction efficiency using 60nm Ag layer is 0.96%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.514-515
• /
• 2005

본 논문에서는 As-Ge-Se-S 박막에 (P:P) 편광빔을 이용하여 회절격자를 형성시키고 비편광 (Non-Polarization) 빔을 이용하여 생성된 격자를 소거시키고 그에 따른 회절효율을 조사 하였다. (P:P) 편광으로 기록된 회절 효율은 시간이 지나도 최대 회절효율의 변화가 없었으나 비편광 빔으로 기록된 회절효율은 시간이 지남에 따라 급격한 회절효율의 감소를 보인다. 따라서 (P:P) 편광으로 회절격자를 형성시키고 비편광빔으로 격자의 소거를 진행하여 약 83%의 회절격자의 소거가 이루어졌다.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.71-79
• /
• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.820-823
• /
• 2000

In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide $As_{40}$$Ge_{10}$$Se_{15}$$S_{35}$ thin films using a He-Ne laser light(633nm). The thickness of thin films is a 8677${\AA}$ and 9093${\AA}$. A He-Ne laser used to probe and record of the grating. Also the, polarization state of object beam modulated with a $\lambda/4$ wave plate. The polarization state of the +1st order diffracted beam generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The diffraction efficiency of circularly polarized recording represented higher than other polarization state.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.78-78
• /
• 2010

The Adsorption structures of phenylalanine on Ge(100) surface have been investigated as a function of coverage using high-resolution photoemission spectroscopy (HRPES) and density functional (DFT) calculation. To converge these experimental and theoretical conclusion, we systematically performed HRCLPES measurements and DFT calculation for various coverage in the adsorption structures of phenylalanine molecules on the Ge(100) surface. In this study, we found two different adsorption structure as a function of coverage in phenylalanine on Ge(100), monitoring three core level spectra (Ge 3d, C 1s, N 1s, and O 1s) using HRPES Through analysis of the binding energies, we confirmed that O-H dissociated and N dative-bonded structure emerges at low coverage (0.10 ML), which is the same to the result of glycine and alanine on Ge(100) system, whereas O-H dissociation structure also appears at higher coverage. Moreover, we observed the shape of phenyl group being included in phenylalanine is changed from flat to tilting structure at final state using DFT calculation. Through the spectral analysis for phenylalanine, we will demonstrate variation of coverage dependent structural change for phenylalanine on Ge(100) surface using experimental (HRPES) and theoretical studies (DFT calculation).

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.1
• /
• pp.34-37
• /
• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1988.05a
• /
• pp.20-23
• /
• 1988

Effect of light irradiation on evaporated chalcogenide glass films of an As-Se-S-Ge system has been studied. Utiling this characteristics diffraction grating of the amorphous film was obtained. Parameters such as film thickness, composition, and exporsure time influencing the diffraction efficiency were also studied. The maximum value of the diffraction efficiency achieved was 4.6% in an $As_{75}Se_{15}S_{35}-Ge_{10}$ film.