• Title/Summary/Keyword: As(V) ion

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A Study on Ion Wind Characteristics of Acceleration Type Multipoint Electrode (가속형 다침전극의 이온풍 특성 연구)

  • Kim, Jin-Gyu
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.5
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    • pp.104-109
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    • 2011
  • In this paper, after an acceleration typed ion wind generator which could format strong electric field in air was manufactured and installed, the effects of the electrode configuration and distance of acceleration type ion wind generator with triangle structure on the ion wind generation characteristics were investigated. As a result, the ion wind generator with curvature multipoint electrode could generate higher ion wind velocity and ion wind generation yield than others with multipoint electrode, curvature line electrode, line electrode structure. The ion wind generator with curvature multipoint electrode showed a peak ion wind velocity of 1.33[m/s] at 19.0[kV] and a ion wind generation yield of 0.12[m/Ws] at 15.0[kV].

BIOCOMPATIBISITY OF ION BEAM PROCESSED FILMS DEPOSITED ON SURGICAL TI-6AI-4V

  • Lee, I-S;Song and I-j Yu
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.16-22
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    • 1997
  • ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.

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Monte-Carlo Simulation for Exposure and Development of Focused Ion Beam Lithography (집속이온빔 리소그라피 (Focused Ion Beam Lithography)외 노출 및 현상에 대한 몬데칼로 전산 모사)

  • Lee, Hyun-Yong;Kim, Min-Su;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1246-1249
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    • 1994
  • Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

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An analysis of the ion penetration phenomena in amorphous $Se_{75}Ge_{25}$ thin film (비정질 $Se_{75}Ge_{25}$박막으로의 이온침투 현상 해석)

  • 이현용;정홍배
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.389-396
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    • 1994
  • The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

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Antimicrobial Activity of Silver Ion against Salmonella typhimurium, Staphylococcus aureus and Vibrio parahaemolyticus (Salmonella typhimurium, Staphylococcus aureus, Vibrio parahaemolyticus에 대한 은 이온의 항균효과)

  • 김현진;이승철
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.31 no.6
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    • pp.1163-1166
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    • 2002
  • Antimicrobial activity of silver ion was tested against 3 kinds of food-borne microorganisms-Salmonella typhimurium, Staphylococcus aureus and Vibrio parahaemolyticus-using paper disk and broth medium methods. In paper disk method, silver ion showed antimicrobial activity against S. typhimurium and V. parahaemolyticus at the concentration above 2 ppm and 10 ppm, respectively, where as it was not detected in S. aureus with 20 ppm of silver ion concentration. In broth medium, the growth of S. typhimurium and V. Porahaemolyticus could be retarded at 0.3 ppm and 0.5 ppm of silver ion concentration respectively. In the presence of 1.0 ppm of silver ion, the growth of S. typhimurium was inhibited completely. In S. aureus, the growth was retarded at 5 ppm and was inhibited at l5 ppm completely.

Determining Potassium Bromate in the Inhalable Aerosol Fraction in Workplace Air with Ion Chromatography

  • Kowalska, Joanna;Lis, Monika;Biesaga, Magdalena
    • Safety and Health at Work
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    • v.12 no.2
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    • pp.209-216
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    • 2021
  • Background: The article presents the results of studies performed in order to develop a new method of airborne potassium bromate(V) determination at workplaces. Methods: The method is based on a collection of the inhalable fraction of potassium bromate(V) using the IOM Sampler, then extraction of bromates with deionized water and chromatographic analysis of the obtained solution. The analysis was performed using ion chromatography with conductometric detection. The tests were performed on a Dionex IonPac®AS22 analytic column (250 × 4 mm, 6 ㎛) with AG22 precolumn (50 × 4 mm 11 ㎛). Results: The method provides for potassium bromate(V) determination within the concentration range of 0.043 ÷ 0.88 mg/m3 for an air sample of 0.72 m3 in volume, i.e., 0.1-2 times the exposure limit value as proposed in Poland. The method was validated in accordance with PN-EN 482. The obtained validation data are as follows: measuring range: 3.1-63.4 ㎍/mL, limit of detection (LOD) = 0.018 ㎍/mL and limit of quantification (LOQ) = 0.053 ㎍/mL. The developed method has been tested in the work environment, on laboratory employees having contact with potassium bromate(V). Conclusion: The analytical method allowed the determination of the inhalable fraction of airborne potassium bromate(V) at workplaces and can be used to assess occupational exposure.

A Study on Electro-Optical Characteristics of the Ion Beam Aligned TN Cell on the DLC Thin Film (DLC 박막을 이용한 Ion Beam 배향 TN 셀의 전기광학특성에 관한 연구)

  • 황정연;조용민;노순준;이대규;백홍구;서대식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.8
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    • pp.726-730
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    • 2002
  • Electro-optical (EO) performances of the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new diamond-like carbon (DLC) thin film surface were investigated. A good voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min was observed. Also, the fast response time of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved. Finally, the residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface is almost the same as that of the rubbing aligned TN-LCD on a polyimide (Pl) surface.

Discharge Characteristics of a KSTAR NBI Ion Source

  • Chang Doo-Hee;Oh Byung-Hoon
    • Nuclear Engineering and Technology
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    • v.35 no.3
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    • pp.226-233
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    • 2003
  • The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

Experimental Results of New Ion Source for Performance Test

  • Kim, Tae-Seong;Jeong, Seung-Ho;Jang, Du-Hui;Lee, Gwang-Won;In, Sang-Yeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.269-269
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    • 2012
  • A new ion source has been designed, fabricated, and installed at the NBTS (Neutral Beam Test Stand) at the KAERI (Korea Atomic Energy Research Institute) site. The goalis to provide a 100 keV, 2MW deuterium neutral beam injection as an auxiliary heating of KSTAR (Korea Super Tokamak Advanced Research). To cope with power demand, an ion current of 50 A is required considering the beam power loss and neutralization efficiency. The new ion source consists of a magnetic cusp bucket plasma generator and a set of tetrode accelerators with circular copper apertures. The plasma generator for the new ion source has the same design concept as the modified JAEA multi-cusp plasma generator for the KSTAR prototype ion source. The dimensions of the plasma generator are a cross section of $59{\times}25cm^2$ with a 32.5 cm depth. The anode has azimuthal arrays of Nd-Fe permanent magnets (3.4 kG at surface) in the bucket and an electron dump, which makes 9 cusp lines including the electron dump. The discharge properties were investigated preliminarily to enhance the efficiency of the beam extraction. The discharge of the new ion source was mainly controlled by a constant power mode of operation. The discharge of the plasma generator was initiated by the support of primary electrons emitted from the cathode, consisting of 12 tungsten filaments with a hair-pin type (diameter = 2.0 mm). The arc discharge of the new ion source was achieved easily up to an arc power of 80 kW (80 V/1000 A) with hydrogen gas. The 80 kW capacity seems sufficient for the arc power supply to attain the goal of arc efficiency (beam extracted current/discharge input power = 0.8 A/kW). The accelerator of the new ion source consists of four grids: plasma grid (G1), gradient grid (G2), suppressor grid (G3), and ground grid (G4). Each grid has 280 EA circular apertures. The performance tests of the new ion source accelerator were also finished including accelerator conditioning. A hydrogen ion beam was successfully extracted up to 100 keV /60 A. The optimum perveance is defined where the beam divergence is at a minimum was also investigated experimentally. The optimum hydrogen beam perveance is over $2.3{\mu}P$ at 60 keV, and the beam divergence angle is below $1.0^{\circ}$. Thus, the new ion source is expected to be capable of extracting more than a 5 MW deuterium ion beam power at 100 keV. This ion source can deliver ~2 MW of neutral beam power to KSTAR tokamak plasma for the 2012 campaign.

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The Ohmic Contact of n-GaAs Using by Liquid Metal Ion Source (액체금속이온원을 이용한 n형 GaAs의 오옴성 접촉)

  • 강태원;이정주;김송강;홍치유;임재영;강승언
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.12
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    • pp.1995-2000
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    • 1989
  • The ion beam system of 20keV C-W (Cockroft Walton) type composed of the AuGe alloy LMIS(Liquid Metal Ion Source) has been designed and constructed. For the fabrication of the ohmic contact to the n-GaAs, the ion beam extracted from the AuGe alloy source was implanted into the n-GaAs, and it was measured by contact resistivity. The stable AuGe ion beam(2.5\ulcorner/cm\ulcorner was obtained at the extraction voltage of 14.5kV. The measurements of the contact resistivity were done by the TLM (Transmission Line Model) method and the specific contact resistivity was found to be 2.4x10**-5 \ulcornercm\ulcornerfor the implanted sample by the 1.9x10**20/cm**3 and the annealed sample at 30\ulcorner for 2 min.

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