• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.173-183
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• 1988

Effects of oxide additives such as MoO3, MnO2 ZrO2 and Fe2O3 on the phase separation and the chemical durability of sodium borosilicate glasses which are the host of waste glasses have been investigated as the basic study on the nuclear-waste immobilization through vitrification. MoO3 and MnO2 were found to be phase separation promotors which increased the temperature as well as catalyzed nucleation and growth for the phase separation of the 10Na2-O-3OB2O3-6OSiO2 (wt%) parent glass within the immiscibility region. The glasses had the interconnected phase-separated structure as the amount of addition increased. On the other hand, ZrO2 and Fe2O3 were inhibitors which showed the reverse effects to the above promotors. It was also found that addition of MoO3 could cause the phase separaton of the 20Na2O-10B2O3-70SiO2(wt%) glass even within the miscibility region. Addition of ZrO2 and Fe2O3 increased the chemical durability of the parent glass within the immiscibility region. Within the miscibility region, however, the addition of 1.96 wt % of MoO3 increased the chemical durability considerably, while MnO2 had little effects.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.419-424
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• 1997

It is well known that the metallo-phthalocyanines (MPcs) are sensitive to toxic gaseous molecules such as NO$_2$ as well as are chemically and thermally stable. Therefore, lots of MPcs have been studied as the potential chemical sensor for NO$_2$gas using quartz crystal microbalance(QCM) or electrical conductivity. In this study, thin films of octa(2-ethylhexyloxy)copper-phthalocyanine were prepared by Langmuir-Blodgett method and characterized by using UV-VIS absorption spectroscopy and ellipsometry. Optimal transfer condition of LB films was investigated and preliminary results of current-voltage(I-V) characteristics of these films exposed to NO$_2$gas as a function of film thickness, temperature and concentration were discussed.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.162-166
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• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.156-158
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• 2009

우리 연구팀은 $SiO_2$ nanospheres를 이용한 natural lithography를 통해 2가지 방법으로 GaAs 기판의 반사율을 감소시켰다. 먼저 GaAs 기판 위에 benzocyclobutene(BCB) 고분자를 코팅한 후, 그 위에 $SiO_2$ nanospheres를 코팅한다. 그리고 고분자의 유리전이 온도이상으로 가열하면 $SiO_2$ nanospheres가 고분자 속으로 가라앉게 되어 렌즈 형태의 표면이 형성된다. 또한, 이 상태에서 BOE 용액을 통해 $SiO_2$ nanospheres를 제거하여 오목한 형태의 표면을 형성할 수 있다. 이러한 2가지 방법의 surface texturing을 통해 우리는 GaAs 표면의 반사도를 각각 400~800nm의 파장에서 평균 13.6%~16.52%의 반사율을 얻을 수 있었다.

• Korean Journal of English Language and Linguistics
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• v.2 no.2
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• pp.185-205
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• 2002

Within the framework of Generalized Sympathy (GS) (Jun 1999), this paper investigates the reasons why phonological rules such as Cluster Simplification, Closed Syllable ${\ae}$-Tensing, and Belfast Dentalization overapply or underapply in Class 2 affixed words in English. According to GS, a morphologically independent word can be treated as a derived word in that it is assumed to have any possible outputs as bases to resemble. As a result, a correspondence relation is triggered between a morphologically independent word being represented as Derived (D) and any possible outputs represented as Base (B), i.e., BD-Faith. In analyses of affixed words, BA-Faith is evoked, instead of BD-Faith. Furthermore, as Benua (1997) suggests, BA-Faith is classified into two correspondence relations; $BA_1$-Faith between Base and Class 1 affixed words, and $BA_2$-Faith between Base and Class 2 affixed words. When the $BA_1$-Faith takes precedence over phonological constraints three rules misapply in Class 2 affixed words. In other words, the misapplications are driven by base-identity effects.

• Journal of the Korean Applied Science and Technology
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• v.30 no.3
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• pp.423-430
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition (CVD) system. Prior to the carbon coils deposition reaction, two kinds of samples having different combination of Ni catalyst and substrate were employed, namely, a commercially-made $Al_2O_3$ ceramic boat with Ni powders and a commercially-made $Al_2O_3$ substrate with Ni layer. By using a commercially-made $Al_2O_3$ ceramic boat, the synthesis of carbon coils could be enhanced as much as 10 times higher than that of $Al_2O_3$ substrate. Furthermore, the dominant formation of the microsized carbon coils could be obtained by using $Al_2O_3$ ceramic boat. The surface roughness of the supporting substrate of $Al_2O_3$ ceramic boat was understood to be associated with the large scale synthesis of carbon coils as well as the dominant formation of the larger-sized, namely the microsized carbon coils.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• Journal of Korean Society for Atmospheric Environment
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• v.8 no.1
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• pp.58-67
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• 1992

For removing $NO_x$ and $SO_x$ from the flue gases emitted from stationary sources, $V_2O_5-MoO_3/TiO_2$ catalysts were prepared by the conventional impregnation method (aqueous solution) and a sort of surface fixation method(nonaqueous solution) as reported excellent reproducibility catalysts. And these catalysts observed their catalytic activities as well as their surface properties. V-Mo-O oxide, prepared from nonaqueous solution of $VOCl_3$ and $Mo(CO)_6$ and aqeous solution method, was supported as amorphous state by XRD and SEM measurements. The infrared spectra of fresh and used catalysts showed that in used catalysts, V=O bands decreased and new bands of vanadium oxysulfate bands were very sensitive. So the catalysts prepared from nonaqueous solution may bring about the high activity. Results from catalytic activity measurements at 350$^\circ$C, in the presence of $SO_2, NO$ conversion was more increased than in absence of $SO_2$. As the $MoO_3$ was added to $V_2O_5/TiO_2 system, SO_2$ conversion increased. It found that from the results, $V_2O-5-MoO_3/TiO_2$ catalysts prepared from an nonaqueous solution may bring about the high activity for both the reaction of NO and $SO_2$ removal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 전자공학회논문지 IE
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• v.43 no.2
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• pp.7-10
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• 2006

A GaN-based metal-insulator-semiconductor (MIS) structure has been fabricated by using $BaTa_2O_6$ instead of conventional oxide as insulator gate. The leakage current o) films are in order of $10^{-12}-10^{-13}A/cm^2$ for GaN on $Al_2O_3$(0001) substrate and in order of $10^{-6}-10^{-7}A/cm^2$ for GaN on GaAs(001) substrate. The leakage current of thses films is governed by space-charge-limited current over 45 MV/cm in case of GaN on $Al_2O_3$(0001) substrate and by Poole-Frenkel emission in case of GaN on GaAs(001).