• 제목/요약/키워드: Artificial Dielectrics

검색결과 3건 처리시간 0.02초

Microwave and RF Heating for Medical Application under Noninvasive Temperature Measurement Using Magnetic Resonance

  • Nikawa, Yoshio;Ishikawa, Akira
    • Journal of electromagnetic engineering and science
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    • 제10권4호
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    • pp.244-249
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    • 2010
  • Recent development of magnetic resonance imaging (MRI) equipment enables interventional radiology (IVR) as diagnosis and treatment under MRI usage. In this paper, a new methodology for magnetic resonance (MR) scanner to apply not only diagnostic equipment but for treatment one is discussed. The temperature measuring procedure under MR is to measure phase shift of $T_1$, which is the longitudinal relaxation time of proton, for the position inside a sample material with the application of pulsed RF for heating inside the sample as artificial dielectrics. The result shows the possibility to apply MR as temperature measuring equipment and as a heating equipment for applying such as hyperthermia heating modality.

In-situ Process Monitoring Data from 30-Paired Oxide-Nitride Dielectric Stack Deposition for 3D-NAND Memory Fabrication

  • Min Ho Kim;Hyun Ken Park;Sang Jeen Hong
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.53-58
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    • 2023
  • The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

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진공 내 상대론적인 영역의 전자빔을 이용한 플라즈마 항적장 가속기 기반 체렌코프 방사를 통한 결맞는 고출력 전자파 발생 기술 연구 (Study of Coherent High-Power Electromagnetic Wave Generation Based on Cherenkov Radiation Using Plasma Wakefield Accelerator with Relativistic Electron Beam in Vacuum)

  • 민선홍;권오준;사토로프마틀랍;백인근;김선태;홍동표;장정민;라나조이;조일성;김병수;박차원;정원균;박승혁;박건식
    • 한국전자파학회논문지
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    • 제29권6호
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    • pp.407-410
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    • 2018
  • 일반적으로 전자파의 동작 주파수가 높아짐에 따라 최대 출력이 작아지고, 파동의 파장도 작아지기 때문에, 회로의 크기도 작아질 수밖에 없다. 특히, kW급 이상의 고출력 테라헤르츠파 주파수 대역의 회로를 제작하려면, ${\mu}m{\sim}mm$ 규모의 회로 크기 문제 때문에 제작에 한계점이 있다. 이러한 한계점을 극복하기 위해 본 논문에서는 회로의 지름이 2.4 cm 정도의 원통형으로, 0.1 THz~0.3 GW급의 발생원 설계 기술을 제안한다. 판드로모티브 힘이 생기는 플라즈마 항적장 가속원리와 인위적인 유전체 활용한 체렌코프방사 발생 기술 기반의 고출력 전자파 발생원의 최적화된 설계를 위해 모델링 및 전산모사를 수행하였다. 객관적인 검증 과정을 통해 회로의 크기에 제한을 덜 받도록 하는 대구경 형태의 고출력 테라헤르츠파 진공소자 제작이 용이하도록 효과적인 설계의 가이드라인을 제시하였다.