• Journal of electromagnetic engineering and science
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• v.10 no.4
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• pp.244-249
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• 2010

Recent development of magnetic resonance imaging (MRI) equipment enables interventional radiology (IVR) as diagnosis and treatment under MRI usage. In this paper, a new methodology for magnetic resonance (MR) scanner to apply not only diagnostic equipment but for treatment one is discussed. The temperature measuring procedure under MR is to measure phase shift of $T_1$, which is the longitudinal relaxation time of proton, for the position inside a sample material with the application of pulsed RF for heating inside the sample as artificial dielectrics. The result shows the possibility to apply MR as temperature measuring equipment and as a heating equipment for applying such as hyperthermia heating modality.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.6
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• pp.407-410
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• 2018

As the operating frequency of an electromagnetic wave increases, the maximum output and wavelength of the wave decreases, so that the size of the circuit cannot be reduced. As a result, the fabrication of a circuit with high power (of the order of or greater than kW range) and terahertz wave frequency band is limited, due to the problem of circuit size, to the order of ${\mu}m$ to mm. In order to overcome these limitations, we propose a source design technique for 0.1 THz~0.3 GW level with cylindrical shape (diameter ~2.4 cm). Modeling and computational simulations were performed to optimize the design of the high-power electromagnetic sources based on Cherenkov radiation generation technology using the principle of plasma wakefield acceleration with ponderomotive force and artificial dielectrics. An effective design guideline has been proposed to facilitate the fabrication of high-power terahertz wave vacuum devices of large diameter that are less restricted in circuit size through objective verification.