• Title/Summary/Keyword: Argon composition

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Computer simulation of aluminide coating by pack cementation (팩 세멘테이션에 의한 알루미나이드 코팅의 컴퓨터 시뮬레이션)

  • Kim, M.I.;Sohn, H.S.;Lee, I.W.
    • Journal of the Korean Society for Heat Treatment
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    • v.8 no.1
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    • pp.3-11
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    • 1995
  • A theoretical model which combines gaseous transport and solid state diffusion was used to study aluminide coating process by pack cementation. The aluminide coatings were applied in the high activity pack containing $NH_4Cl$ activator with Ni substrate under argon atmosphere. On the basis of the process conditions, the suggested model allows the surface composition, the growth rate of coating layers and the aluminium concentration profiles in coatings to be calculated. In the case of $NH_4Cl$ activator, careful consideration was required in the analysis, because activator contains nitrogen and hydrogen as well as halogen element to activate the pack. A good agreement is obtained between the theoretical predictions and the experimental results.

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Effects of Vacuum Annealing on the Structural Properties of Sputtered Vanadium Oxide Thin Films (스퍼터된 바나듐 산화막의 구조적 특성에 미치는 진공 어닐링의 효과)

  • Whang, In-Soo;Choi, Bok-Gil;Choi, Chang-Kyu;Kwon, Kwang-Ho;Kim, Sung-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.70-73
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    • 2002
  • Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

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Empirical relationship between band gap and synthesis parameters of chemical vapor deposition-synthesized multiwalled carbon nanotubes

  • Obasogie, Oyema E.;Abdulkareem, Ambali S.;Mohammed, Is'haq A.;Bankole, Mercy T.;Tijani, Jimoh. O.;Abubakre, Oladiran K.
    • Carbon letters
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    • v.28
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    • pp.72-80
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    • 2018
  • In this study, an empirical relationship between the energy band gap of multi-walled carbon nanotubes (MWCNTs) and synthesis parameters in a chemical vapor deposition (CVD) reactor using factorial design of experiment was established. A bimetallic (Fe-Ni) catalyst supported on $CaCO_3$ was synthesized via wet impregnation technique and used for MWCNT growth. The effects of synthesis parameters such as temperature, time, acetylene flow rate, and argon carrier gas flow rate on the MWCNTs energy gap, yield, and aspect ratio were investigated. The as-prepared supported bimetallic catalyst and the MWCNTs were characterized for their morphologies, microstructures, elemental composition, thermal profiles and surface areas by high-resolution scanning electron microscope, high resolution transmission electron microscope, energy dispersive X-ray spectroscopy, thermal gravimetry analysis and Brunauer-Emmett-Teller. A regression model was developed to establish the relationship between band gap energy, MWCNTs yield and aspect ratio. The results revealed that the optimum conditions to obtain high yield and quality MWCNTs of 159.9% were: temperature ($700^{\circ}C$), time (55 min), argon flow rate ($230.37mL\;min^{-1}$) and acetylene flow rate ($150mL\;min^{-1}$) respectively. The developed regression models demonstrated that the estimated values for the three response variables; energy gap, yield and aspect ratio, were 0.246 eV, 557.64 and 0.82. The regression models showed that the energy band gap, yield, and aspect ratio of the MWCNTs were largely influenced by the synthesis parameters and can be controlled in a CVD reactor.

Preparation of Coal Tar Pitch as Carbon Fibers Precursor from Coal Tar (콜타르로부터 탄소섬유 제조를 위한 프리커서용 석탄계 핏치의 제조)

  • Ko, Hyo Joon;Park, Chang Uk;Cho, Hyo Hang;Yoo, Mi Jung;Kim, Myung-Soo;Lim, Yun-Soo
    • Korean Journal of Materials Research
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    • v.23 no.5
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    • pp.276-280
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    • 2013
  • Coal tar is the primary feedstock of premium graphitizable carbon precursor. Coal tars are residues formed as byproducts of thermal treatments of coal. Coal tar pitches were prepared through two different heat treatment schedules and their properties were characterized. One was prepared with argon and oxidation treatment with oxygen; the other was prepared with oxygen treatment at low temperature and then argon treatment at high temperature; both used coal tar to prepare coal tar pitches. To modulate the properties, different heat treatment temperatures ($300{\sim}400^{\circ}C$) were used for the coal tar pitches. The prepared coal tar pitches were investigated to determine several properties, such as softening point, C/H ratio, coke yield, and aromaticity index. The coal tar pitches were subject to considerable changes in chemical composition that arose due to polymerization after heat treatment. Coal tar pitch showed considerable increases in softening point, C/H ratio, coke yields, and aromaticity index compared to those characteristics for coal tar. The contents of gamma resin, which consists of low molecular weight compounds in the pitches and is insoluble in toluene, showed that the degree of polymerization in the pitches was proportional to C/H ratio. Using an oxidizing atmosphere like air to prepare the pitches from coal tar was an effective way to increase the aromaticity index at relatively low temperature.

Crystallographic Analysis of Ar Encapsulate within Cs3-A Zeolite

  • Lim, Woo Taik;Kim, Bok Jo;Park, Jong Sam;Chang, Chang Hwan;Jung, Sung Wook;Heo, Nam Ho
    • Analytical Science and Technology
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    • v.15 no.6
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    • pp.540-549
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    • 2002
  • The arrangement of encapsulated Ar atoms in the molecular-dimensioned cavities of fully dehydrated zeolite A of unit-cell composition $Cs_3Na_8HSi_{12}Al_{12}O_{48}$ ($Cs_3$-A) has been studied crystallographically to probe the confinement effect of guest species in microporous environment. Atoms of Ar were encapsulated in the cavities of $Cs_3$-A by treatment with 410 atm of Ar at $400^{\circ}C$ for two days, followed by cooling at room temperature. The crystal structure of $Cs_3Na_8H$-A(4Ar) ($P_e$ = 410 atm, $a=12.245(2){\AA}$, $R_1=0.0543$, and $R_2=0.0552$) has been determined by single crystal X-ray diffraction technique in the cubic space group $Pm\bar{3}m$ at 21 (1) $^{\circ}C$ and 1 atm. Encapsulated Ar atoms are distributed in three crystallographic distinct positions: 1.5 Ar atoms per unit cell opposite 6-rings, 1.5 opposite four-rings in the large cavity, and finally 1.0 in the sodalite-unit. The possible structures of argon clusters, such as $Ar_2$, $Ar_3$, and $Ar_4$, are proposed.

Transparent Conductive Indium Zinc Tin Oxide Thin Films for Solar Cell Applications

  • Damisih, Damisih;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.208-208
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    • 2010
  • Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

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Thermodynamics of Hydrogen-Induced Phase Separation on Pd-Co Alloys (수소유기에 따른 Pd-Co합금들의 상 분리 현상에 대한 열역학적 고찰)

  • Song, D.M.;Park, C.N.;Choi, J.
    • Journal of Hydrogen and New Energy
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    • v.16 no.3
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    • pp.244-252
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    • 2005
  • It is very interesting and important in the academic point of view and in practical use the hydrogen-induced phase separation(HIPS) which appears during hydrogen heat treatment. Since hydrogen can be removed very fast by pumping it out the hydrogen-induced new lattice phase which can not be obtained without hydrogen can be preserved as meta-stable state. In this study it has been investigated whether the HIPS appear in Pd-Al, Pd-Co, Pd-Cr, Pd-Ti, Pd-V and Pd-Zr alloys and discussed thermodynamic representation of the HIPS. The Pd alloys were arc-melted under argon atmosphere and remelted 4 or 5 times for homogenization. The alloys were annealed at 600$^{\circ}C$ under vacuum for 24 hrs and then subjected to pressure-composition isotherm measurements at 100$^{\circ}C$. The hydrogen heat treatment(HHT) of samples was carried out at 600$^{\circ}C$ under hydrogen pressure of 70 bar for 6 days and PC isotherms at 100$^{\circ}C$ were measured. By comparing the PC isotherms measured before and after HHT, occurrence of phase separation was determined. The experimental results showed that the HIPS appeared only in Pd-0.05Co alloy. For Pd-Co alloys with various composition the PC isotherms were measured. By adopting Park-Flanagan model for ternary thermodynamics the Gibbs free energy change for Pd-Co-H solid solution was calculated and subsequently with this the HIPS in Pd-Co alloy was explained fairly.

Effect of deposition parameters on structure of ZnO films deposited by an DC Arc Plasmatron

  • Penkov, Oleksiy V.;Chun, Se-Min;Kang, In-Jae;Lee, Heon-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.255-255
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    • 2011
  • Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

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Electrode Properties of Thin Film Battery with LiCoO2 Cathode Deposited by R.F. Magnetron Sputtering at Various Ar Partial Pressures (R.F. 마그네트론 스퍼터링을 이용한 LiCoO2 양극활물질의 Ar 증착분압에 따른 박막전지 전극 특성)

  • Park, H.Y.;Lim, Y.C.;Choi, K.G.;Lee, K.C.;Park, G.B.;Kwon, M.Y.;Cho, S.B.;Nam, S.C.
    • Journal of the Korean Electrochemical Society
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    • v.8 no.1
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    • pp.37-41
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    • 2005
  • We investigated the electrochemical properties and microstructure on the various argon deposition pressure $(P_{Ar})$ and the low annealing temperature $(400^{\circ}C)$ of $LiCoO_2$ cathodes, which deposited by R.F. magnetron sputtering. The microsuucture and composition of Lico02 thin film was changed as a function of $P_{Ar}$. The capacity and electrochemical properties were improved with Ph of $LiCoO_2$ thin films. The cycling reversibility and stability of thin film batteries were measured by cyclic voltammetry and the constant current charge-discharge. The physical properties of cathode films were analyzed by ICP-AES, XRD, SEM and AFM for composition, crystallization and surface morphology.

Depositon of Transparent Conductive Films by a DC arc Plasmatron

  • Penkov, O.V.;Plaksin, V. Yu.;Joa, S.B.;Kim, J.H.;LEE, H.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.480-480
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    • 2010
  • In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

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