• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.194-196
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• 2010

A study is presented of improved road light design for drivers and pedestrians with the use of a ray- or reverse ray-tracing method. Many existing road lights are unsuitable for drivers and pedestrians because of serious problems such as glare effect or randomicity of illuminated areas. This situation has arisen because in customary design methods the emphasis has been on simple factors such as luminance or electrical power. However a high luminance or electrical power consumption, alone, do not guarantee bright and good road lighting. So we have applied a ray-tracing method to the design of a road light reflector with the goals of ensuring that illuminated objects on the road can be seen more clearly and that the illuminating light is more comfortable for the eyes of drivers and pedestrians. We have set design targets for factors such as the uniformity of lighting on the road area per road light, the shading angles and the continuous luminance uniformity on long lengths of road. For set heights of the eyes of drivers and pedestrians eyes we have calculated a design guideline for the achievement of the above design targets. Then we designed a road light reflector using the reverse ray-tracing approach. Also we have achieved the same luminance on the road with almost half the power consumption, through the reduction of lighty loss. In an ideal design optimum parameters are suggested to be a shading angle of 75 degrees and a luminance uniformity of 0.5 on the road area. This reflector performance is achievable with a 250 watt power consumption ceramic discharge metal light source.

• Journal of Information Display
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• v.3 no.2
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• pp.26-30
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• 2002

Large area plasma source has been built for LCD etcher by an array of $2{\times}2$ ICP sources. Since only one RF power supply and one impedance matching network is used in this configuration, any difference in impedances of unit RF antennas causes unbalanced power delivery to the unit ICP. In order to solve this unavoidable unbalance, unit antenna is designed to have a movable tap, with which the inductance of each unit can be adjusted individually. The plasma density becomes symmetric and etch rate becomes more uniform with the impedance adjustment. The concept of adding axial time-varying magnetic field to the single ICP source is applied to the array ICP source, and is found to be effective in terms of etch rate and uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.550-551
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• 2013

Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.82-85
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• 2006

As a display becomes large recently, Acquisition of high luminance and Luminance uniformity is becoming difficult in the existing CCFL or EEFL backlight system. So, study for a performance enhancement has enforced. but lamp development of flat type is asked for high luminance and a luminance uniformity security in of LCD and area anger trend ultimately. In this paper, we changed a tip shape of an electrode for production by the most suitable LCD backlight surface light source, and confirmed discharge characteristic along discharge gas pressure and voltage, and confirmed electric field distribution and discharge energy characteristic through a Maxwell 2D simulation. Therefore the discharge firing voltage characteristic showed a low characteristic than a rectangular type and round type in case of electrode which used tip of a triangle type, and displayed a discharge electric current as a same voltage was low.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.274-281
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• 2010

This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12MHz and 400kHz.

• ETRI Journal
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• v.42 no.6
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• pp.837-845
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• 2020

The objective of this study was to implement an in vitro exposure system for 28 GHz to investigate the biological effects of fifth-generation (5G) communication. A signal source of 28 GHz for 5G millimeter-wave (MMW) deployment was developed, followed by a variable attenuator for antenna input power control. A power amplifier was also customized to ensure a maximum output power of 10 W for high-power 28-GHz exposure. A 3-dB uniformity over the 80 mm × 80 mm area that corresponds to four Petri dishes of three-dimensional cell cultures can be obtained using a customized choke-ring-type antenna. An infrared camera is employed for temperature regulation during exposure by adjusting the airflow cooling rate via real-time feedback to the incubator. The reported measurement results confirm that the input power control, uniformity, and temperature regulation for 28-GHz exposure were successfully accomplished, indicating the possibility of a wide application of the implemented in vitro exposure system in the fields of various MMW dose-response studies.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.544-547
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• 2006

In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.478-478
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• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.1-6
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• 2012

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, $56^{\circ}$, and $16^{\circ}$, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ${\pm}1.62%$ and ${\pm}4.13%$, and the resistivity was $2.79{\times}10^{-3}W{\cdot}cm$.