• 한국진공학회지
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• 제16권2호
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• pp.141-144
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• 2007

n-GaAs의 시료를 furnace annealing 처리와 laser annealing 처리를 한 후, PR 방법으로 비교 조사하였다. 시료는 Furnace annealing을 5 분간 $400{\sim}800^{\circ}C$에서 처리한 시료와 ArF excimer laser($30{\sim}50\;W$)로 5 분간 Laser annealing 처리 한 시료로 준비하였다. Furnace로 annealing을 한 경우에 주 신호(정점)는 1.43 eV에서 관측되었는데 비해 laser로 annealing 한 샘플은 1.42 eV로 0.01 eV가 더 작게 관측되었다. 이는 laser annealing이 furnace annealing 보다 표면과 내면에서 일어나는 열처리 효과가 더 고르게 일어나가 때문이다.

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.26-26
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• 1996

• 한국광학회지
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• 제13권4호
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• pp.332-335
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• 2002

가류고무의 접착력을 향상시키기 위해서 엑시머 펄스 레이저 광으로 표면처리를 하였다. 레이저 광 조사 수의 증가에 따라, 접착력은 크게 향상되어, 100회의 조사 수에서 1500 N/m의 가장 큰 값을 얻었다. 또한 에너지 밀도 증가에 대해서도 접착력은 증가하여 에너지 밀도 176 mJ/$cm^{2}$에서 가장 큰 접착력 1500 N/m를 얻게 되었다. 에너지 밀도의 증가에 따라 접착력이 증가하는 것은 표면적의 증가와 관련이 있음을 알았다.

• 한국연소학회:학술대회논문집
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• 한국연소학회 1997년도 제15회 KOSCO SYMPOSIUM 논문집
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• pp.13-21
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• 1997

Excitations of eight pumping transitions for nitric oxide fluorescence imaging are analyzed under equivalent experimental conditions to determine the detection. Frequency mixed dye laser pumping, 1st anti-Stokes $H_2$ Raman of KrF excimer laser pumping and ArF excimer laser pumping show good sensitivities.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.43-47
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• 1999

Instead of using KrF excimer lasers( ${\lambda}$ = 248 nm) in depositing oxide thin films, as in the most of the laboratories in Korea, we have used an ArF excimer laser( ${\lambda}$ = 197 nm) which has a shorter wavelength. By using a beam which has a shorter wavelength, we could obtain higher quality and smoother surface YBCO thin films. We fabricated YBCO thin films with the various substrate temperature conditions and analyzed the characteristics of these films. We also studied the charateristics of the films fabricated under the various conditions of the power of laser and the oxygen pressure. The characterization tools used in this work were a transport measurement setup, an XRD , and a SEM. We also fabricated STO/YBCO multilayers to use in SFQ devices fabrication. XRD patterns of the multilayers showed that the multilayer films were grown epitaxially.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1999년도 학술대회논문집-국제 전기방전 및 플라즈마 심포지엄 Proceedings of 1999 KIIEE Annual Conference-International Symposium of Electrical Discharge and Plasma
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• pp.58-63
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• 1999

In order to analyze the discharge-pumped KrF excimer laser, computer simulation code is developed. On the other hand, the electron velocity distribution in a discharge plasma, measured by the Thomson scattering method, showed the Maxwellian, while the code predicted non-Maxwellian. This disagreement was solved by introducing the electron-electron collision into the simulation code. We also developed a simulation code on the CO2 laser-heated plasma in high-pressure Ar gas, and estimated the formation process of Ar2 excimer. The code predicted the possibility of the Ar2 laser action at 126 nm.

• 한국결정성장학회지
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• 제13권2호
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• pp.79-82
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• 2003

ArF(193nm) 엑시머 레이저를 이용한 펄스레이저증착법(PLD)에 의해 GaN 소결체를 타겟 재료로 하여 $SiO_2$기판위에 GaN nanoparticles를 합성하였다. PLD 공정 중에는 100Pa, 50Pa, 10Pa및 1 Pa의 Ar gas 압력과 100mJ 및 200mJ의 레이저 에너지를 가하였다. 합성된 GaN nanoparticles는 XRD, SEM, TEM, XPS 및 optical absorption spectra 등에 의해 분석되었다. 합성된 GaN nanoparticles는 대체적으로 20~30nm의 입경을 갖는 균일한 분포를 하고 있었다. 또한, Ar 기체 압력이 낮아짐에 따라 합성된 GaN nanoparticles의 stoichiometry가 향상되고 optical band edge가 blueshift 경향을 나타내었다.

• 한국광과학회:학술대회논문집
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• 한국광과학회 1999년도 학술대회지
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• pp.91-91
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• 1999

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.80-84
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• 2000

High temperature superconductor shows a good electric and magnetic properties and is known as a good candidate in various electronic device application. At present the technique to construct multilayers composed of HTS films and insulator films has not been fully studied in domestic research institutes. Since the construction of any reasonable eletronic devices require the use of multilayers, the development of HTS eletronic devices has been limited. To manufacture multiplayer, several processing steps which involve deposition and ion millings are required. To manufacture a good quality multilayerd structure, not only the deposition techniques but also the proper patterning have to be developed. In this work, we have fabricated a YBCO/STO/YBCO multiplayer and studied the electronic properties of it.