• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.141-144
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• 2007

We investigated variation of the photoreflectance(PR) signals for n-GaAs furnace and laser annealed. The samples were annealed by using ArF excimer laser(5 min, $30{\sim}50\;W$) and furnace(5 min $400{\sim}700^{\circ}C$). The PR signals(top point) measured from the ArF excimer laser annealed sample showed 1.42 eV and furnace annealed sample showed 1.43 eV. This result is ArF excimer laser annealed sample was uniform annealed surface and inter state.

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.26-26
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• 1996

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.332-335
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• 2002

Surface treatment was carried out by an Excimer Pulse laser beam in order to increase the adhesive strength of vulcanized rubber. With increasing number of laser beam irradiations, the adhesive strength was greatly increased; the adhesive strength was 1,500 N/m after irradiation 100 times. The energy density increase was in direct proportion to the adhesive strength increase; the maximum value of the adhesive strength was 1,500 N/m at the energy density of 176 mJ/$cm^{2}$. It was concluded that the increase of surface area was relevant to that of both energy density and adhesive strength

• 한국연소학회:학술대회논문집
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• 1997.06a
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• pp.13-21
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• 1997

Excitations of eight pumping transitions for nitric oxide fluorescence imaging are analyzed under equivalent experimental conditions to determine the detection. Frequency mixed dye laser pumping, 1st anti-Stokes $H_2$ Raman of KrF excimer laser pumping and ArF excimer laser pumping show good sensitivities.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.33-37
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• 2003

This study was performed to investigate the deposition mechanism of SiO$_2$ by ArF excimer laser(l93nm) CVD with Si$_2$H$\_$6/ and N$_2$O gas mixture and evaluate laser CVD quantitatively by modeling. With ArF excimer laser CVD, thin films can be deposited at low temperature(below 300$^{\circ}C$), with less damage and good uniformity owing to generation of conformal reaction species by singular wavelength of the laser beam. In this study, new model of SiO$_2$ deposition process by laser CVD was introduced and deposition rate was simulated by computer with the basis on this modeling. And simulation results were compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.43-47
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• 1999

Instead of using KrF excimer lasers( ${\lambda}$ = 248 nm) in depositing oxide thin films, as in the most of the laboratories in Korea, we have used an ArF excimer laser( ${\lambda}$ = 197 nm) which has a shorter wavelength. By using a beam which has a shorter wavelength, we could obtain higher quality and smoother surface YBCO thin films. We fabricated YBCO thin films with the various substrate temperature conditions and analyzed the characteristics of these films. We also studied the charateristics of the films fabricated under the various conditions of the power of laser and the oxygen pressure. The characterization tools used in this work were a transport measurement setup, an XRD , and a SEM. We also fabricated STO/YBCO multilayers to use in SFQ devices fabrication. XRD patterns of the multilayers showed that the multilayer films were grown epitaxially.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.58-63
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• 1999

In order to analyze the discharge-pumped KrF excimer laser, computer simulation code is developed. On the other hand, the electron velocity distribution in a discharge plasma, measured by the Thomson scattering method, showed the Maxwellian, while the code predicted non-Maxwellian. This disagreement was solved by introducing the electron-electron collision into the simulation code. We also developed a simulation code on the CO2 laser-heated plasma in high-pressure Ar gas, and estimated the formation process of Ar2 excimer. The code predicted the possibility of the Ar2 laser action at 126 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.91-91
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• 1999

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.80-84
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• 2000

High temperature superconductor shows a good electric and magnetic properties and is known as a good candidate in various electronic device application. At present the technique to construct multilayers composed of HTS films and insulator films has not been fully studied in domestic research institutes. Since the construction of any reasonable eletronic devices require the use of multilayers, the development of HTS eletronic devices has been limited. To manufacture multiplayer, several processing steps which involve deposition and ion millings are required. To manufacture a good quality multilayerd structure, not only the deposition techniques but also the proper patterning have to be developed. In this work, we have fabricated a YBCO/STO/YBCO multiplayer and studied the electronic properties of it.