• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.51-57
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• 2019

구리 표면을 대기 중의 산화로부터 보호하기 위해서 아르곤(Ar)과 질소($N_2$) 가스를 이용하는 two-step플라즈마 공정으로 산화 방지층인 구리 질화물 패시베이션 형성을 연구하였다. Ar 플라즈마는 구리 표면에 존재하는 이물질을 제거하는 동시에 표면을 활성화시켜 다음 단계에서 진행되는 $N_2$ 플라즈마 공정 시 질소 원자와 구리의 반응을 촉진시키는 역할을 수행한다. 본 연구에서는 two-step 플라즈마 공정 중 Ar 플라즈마 공정 조건이 구리 질화물 패시베이션 형성에 미치는 영향을 실험계획법의 완전요인설계를 통하여 분석하였다. XPS 분석에 의하면 Ar 플라즈마 공정 시 낮은 RF 파워와 압력을 사용할 경우 구리 산화물 피크(peak) 면적은 감소하고, 반대로 구리 질화물(Cu4N, Cu3N) 피크 면적은 증가하였다. Ar 플라즈마 공정 시 구리 질화물 형성의 주 효과는 RF 파워로 나타났으며 플라즈마 공정 변수간 교호작용은 거의 없었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.121-121
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• 2011

Graphene formed by chemical vapor deposition was exposed to the various plasmas of Ar, O2, N2, and H2 to examine its effects on the bonding properties of graphene to metal. Upon the Ar plasma exposure of patterned graphene, the subsequently deposited metal electrodes remained intact, enabling successful fabrication of field effect transistor (FET) arrays. The effects of enhancing adhesion between graphene and metals were more evident from O2 plasmas than Ar, N2, and H2 plasmas, suggesting that chemical reaction of O radicals induces hydrophilic property of graphene more effectively than chemical reaction of H and N radicals and physical bombardment of Ar ions. From the electrical measurements (drain current vs. gate voltage) of field effect transistors before and after Ar plasma exposure, it was confirmed that the plasma treatment is very effective in controlling bonding properties of graphene to metals accurately without requiring buffer layers.

• 폴리머
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• 제36권2호
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• pp.137-144
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• 2012

대기압 플라즈마 처리 및 글리시딜 메타크릴레이트(glycidyl methacrylate, GMA) 그래프트 공중합을 통해 폴리에틸렌(polyethylene, PE)의 표면을 개질하였다. 우선 RF-power, 플라즈마 처리시간, Ar의 유량, 처리 시편의 이동속도를 변화시켜 PE의 표면을 플라즈마 처리하고, 처리된 각 시편들의 접촉각 측정과 표면자유에너지 계산을 통하여 최적의 플라즈마 표면처리 조건을 구하였다. 그 결과 최적 표면처리 조건은 RF-power 200W, 플라즈마 처리시간 600 sec, Ar 유량 5 LPM, 처리 시편의 이동속도 20 mm/sec 이었다. 이 조건하에서 처리된 PE 표면에 GMA를 최대한 많이 도입하기 위하여 GMA 농도와 반응온도, 반응시간을 변수로 그래프트 공중합을 수행하였다. 반응전후 시편의 질량차이 분석을 통하여 각 시편들의 그래프트도(grafting degree, GD)를 측정하고, 가장 높은 GD를 얻을 수 있는 그래프트 공중합 반응조건을 결정하였다. 그 결과 GMA 최대 도입 조건은 GMA 농도 20 vol%, 반응온도 $80^{\circ}C$, 반응시간 4 hr 이었다.

• Macromolecular Research
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• 제12권1호
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.101-103
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• 2009

Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.

• 한국표면공학회지
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• 제48권6호
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• pp.269-274
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• 2015

In this experiment, post-nitriding treatment was performed at $400^{\circ}C$ on AISI 316 stainless steel which was plasma carburized previously at $430^{\circ}C$ for 15 hours. Plasma nitriding was implemented on AISI 316 stainless steel at various gas compositions (25% $N_2$, 50% $N_2$ and 75% $N_2$) for 4 hours. Additionally, during post nitriding Ar gas was used with $H_2$ and $N_2$ to observe the improvement of surface properties. After treatment, the behavior of the hybrid layer was investigated by optical microscopy, X-ray diffraction, and micro-hardness testing. Potentiodynamic polarization test was also used to evaluate the corrosion resistance of the samples. Meanwhile, it was found that the surface hardness increased with increasing the nitrogen gas content. Also small percentage of Ar gas was introduced in the post nitriding process which improved the hardness of the hardened layer but reduced the corrosion resistance compared with the carburized sample. The experiment revealed that AISI 316L stainless steel showed better hardness and excellent corrosion resistance compared with the carburized sample, when 75% $N_2$ gas was used during the post nitriding treatment. Also addition of Ar gas during post nitriding treatment degraded the corrosion resistance of the sample compared with the carburized sample.

• 멤브레인
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• 제13권2호
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• pp.73-80
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• 2003

폴리메틸펜텐 막(polymethylpentene membrane, PMP)을 Ar, NH_3$ 플라즈마로 표면 처리하고, 처리 전후의 투과 도와 선택도의 변화를 관찰하였다. Ar 플라즈마로 처리하였을 때 O/C의 비율이 증가하며 친수성기 (OH, COOH, C=O)의 도입이 확인되었고 $NH_3$ 플라즈마로 처리하였을 때 아민, 아미노기가 도입되었다. 플라즈마 처리된 폴리메틸펜텐막에서 $CO_2$의 투과도와 $N_2$,에 대한 선택도 (Actual Separation Factor)의 최적조건은 Ar 플라즈마 처리 (30 W-6 min)의 경우 각각 182 Barrer ［$10^{-10}\;cm^3(STP)cm/cm^2$.s.cmHg］와 6.17이며, $NH_3$, 플라즈마 처리 (30 W-8 min)의 경우 각각 144 Barrer [$10^{-10}/cm^2(STP)cm/cm^2$.s.cmHg] 와 6.13을 얻었다.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.456-461
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• 2007

In this study, a surface treatment method using accelerated Ar ions was experimented for exposing the carbon nanotubes (CNT) from the screen-printed CNT paste. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposed by UV light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy, bombardment time, and the power of RF plasma ion source. When Ar ions accelerated with 100 eV energy from the 100 W RF plasma source are bombarded on the CNT paste surface for 10 min, the emission level and the uniformity were best.

• Korean Chemical Engineering Research
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• 제40권6호
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• pp.687-693
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• 2002

폴리이써설폰 막(polyethersulfone membrane, PES)을 Ar, $NH_3$ 플라즈마로 표면 처리하고, 처리 전후의 변화를 관찰하였다. Ar 플라즈마로 처리하였을 때 O/C의 비율이 증가하며 친수성기의 도입이 확인되었고 $NH_3$ 플라즈마로 처리하였을 때 아민, 아미노기가 도입되었다. 또한 폴리이써설폰 막의 흡습성이 유지될 경우, 플라즈마 처리에 의해 표면에 형성된 극성 작용기들과 $CO_2$와의 내부반응이 증가하였다. 이로 인해 $N_2$에 비하여 $CO_2$의 용해 선택성이 증가하였고 투과도와 선택도가 동시에 향상되는 효과를 나타내었다. 플라즈마 처리된 폴리이써설폰 막에서 $CO_2$의 투과도와 ${\gamma}$(actual separation factor)에 대한 최적조건은 Ar 플라즈마 처리의 경우 10 W-2 min에서 각각 $13.19{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$와 20.12이며, $NH_3$ 플라즈마 처리의 경우 50 W-2 min에서 $15.40{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$와 20.06를 얻었다.

• 환경위생공학
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• 제13권2호
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• pp.147-155
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• 1998

In this study, we prepared non-porous plasma membrane for having high permeability and selectivity and this membrane was deposited on the $Al_{2}O_{3}$ membrane by using $CHF_{3}$ & $SiH_{4}$ monomer. Also, we investigated for the permeation characteristics of the plasma polymer membrane by Ar plasma treatment. When the position of substrate was near cathode, the selectivity was increased with Ar plasma treatment time and rf-power. The pore size of $Al_{2}O_{3}$ membrane had an effect on the permeability and the position of substrate affected selectivity.