• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.21-23
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• 2005

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ in $C_{3}F_{8}-Ar$ mixture gases were measured by Double shutter drift tube and calculated by multi-term approximation of the Boltzmann equation over the wide E/N range from 0.03 to 100 Td. And an inelastic collision cross sections for $C_{3}F_{8}$ molecular gas were redetermined for quantitative characteristic analysis.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.599-606
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• 2001

In this paper, the ac breakdown characteristics of pure Ar, Kr and $N_2$ gas with gas pressure range of 58.8-137.3[kPa] under uniform and non-uniform fields were investigated, and the measured values were compared with those In Ar/$N_2$ and Kr/$N_2$ gas mixtures with pressure varying. Summarizing the experimental results, the breakdown voltages of Pure $N_2$gas, under uniform and non-uniform fields, were increased about 4.8 and 1.1 times than those of pure Ar gas, and about 4.4 and 1.2 times than those of pure Kr gas, and the ac breakdown voltage increased with the pressure increasing. The breakdown voltages of Ar/$N_2$ gas mixtures were decreased with decreasing the mixture ratio of Pure $N_2$ gas. In case of Ar(85%)/$N_2$ (15%) and Ar(70%)/$N_2$ (30%) gas mixtures comparing to the pure Ar gas, the breakdown voltages under uniform field were increased about 1.8 and 2.2 times, and under non-uniform field were increased about 1.1 and 1.3 times at the pressure of 101.3[kPa]. Also, in case of Kr(85%)/$N_2$ (15%) and Kr(70%)/$N_2$ (30%) gas mixtures comparing to the pure Kr gas, the breakdown voltages under uniform field were increased about 1.7 and 2.0 times, and under non-uniform field were increased about 1.0 and 1.2 times. Corona inception voltage of Kr(70%)/$N_2$(30%) gas mixtures under non-uniform fields were increased about 1.28 times than those of Ar(70%)/$N_2$ (30%) gas mixtures. In case of practical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$ (30%) gas mixtures were increased about 1.15 and 1.21 times than those of Ar(70%)/$N_2$ (30%) gas mixtures.

• Journal of Powder Materials
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• v.19 no.2
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• pp.110-116
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• 2012

This study investigated the effects of annealing environment for the densification and purification properties of pure titanium coating layer manufactured by cold spraying. The annealing was conducted at $600^{\circ}C$/1 h and three kinds of environments of vacuum, Ar gas, and $5%H_2+Ar$ mixture gas were controlled. Cold sprayed Ti coating layer (as sprayed) represented 6.7% of porosity and 228 HV of hardness, showing elongated particle shapes (severe plastic deformation) perpendicular to injection direction. Regardless of gas environments, all thermally heat treated coating layers consisted of pure ${\alpha}$-Ti and minimal oxide. Vacuum environment during heat treatment represented superior densification properties (3.8% porosity, 156.7 HV) to those of Ar gas (5.3%, 144.5 HV) and $5%H_2+Ar$ mixture gas (5.5%, 153.1 HV). From the results of phase analysis (XRD, EPMA, SEM, EDS), it was found that the vacuum environment during heat treatment could be effective for reducing oxide contents (purification) in the Ti coating layer. The characteristic of microstructural evolution with heat treatment was found to be different at three different gas environments. The controlling method for improving densification and purification in the cold sprayed Ti coating material was also discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.748-751
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• 2009

This paper provides a novel scheme to enhance luminous efficiency within Plasma Display Panels (PDPs). The He-Xe or Ne-Xe mixtures are mainly used in conventional PDP cells, where their discharge characteristics exemplify different behavior. Significantly, the excitation efficiency in He-Xe is lower than that of the Ne-Xe mixture. This paper demonstrates that by adding a small quantity of Ar or Kr gas in Ne-Xe mixture increases cell efficiency, while for the He-Xe mixtures their cell efficiency is reduced.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.809-812
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• 2008

Structural parameter variation effects (changing the coplanar gap under different discharge dimensions) and use of complex gas mixtures (He, Ne, Ar and Xe) in mercury-free fluorescent lamps are studied in this paper. Pure Neon gas is the best buffer gas for obtaining high luminous efficiency in mercury-free fluorescent lamps. It is shown that with a shorter coplanar gap (30mm), a high luminous efficiency can be obtained at low operating voltage, as well as high luminance uniformity and stable discharge with a Ne-Xe 20% gas mixture.

• Journal of Welding and Joining
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• v.30 no.5
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• pp.46-50
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• 2012

This study was carried out to investigate the effect of welding parameters such as shielding gas compositions welding voltage and welding current on the pore formation in the weld beads of galvanized steel pipes produced with gas metal arc welding. The porosity was evaluated and rated by metallography and radiographic test in terms of weight percentage, number and distribution of pores in weld beads. The porosity increased with increasing welding voltage and current, in which Ar gas produced the most porosity while $Ar+5%O_2$ generated the least porosity. It was found that the porosity could be reduced by selection of the proper gas mixture composition such as $Ar+5%O_2$ and $Ar+10%CO_2$ and by using current (130~150A) and voltage(16~20V).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• Korean Journal of Materials Research
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• v.30 no.4
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• pp.169-175
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• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.