• 대한전기학회논문지
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• 제43권5호
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• 한국재료학회지
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• 제20권3호
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• pp.111-116
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• 2010

Chloride-based fluxes such as NaCl-KCl are used in the refining of Al melt. The vapor pressure of the chloride is one of the fundamental pieces of information required for such processes, and is generally high at elevated temperatures. In order to measure the vapor pressure for chlorides, the apparatus for the transpiration method was assembled in the present study. The vapor pressure of $ZnCl_2$ and $FeCl_2$, which is related with the process of aluminum refining and the recovery of useful elements from iron and steel industry by-products, was also measured. In the measurement of vapor pressure by the transpiration method, the powder of $ZnCl_2$ or $FeCl_2$ in a alumina boat was loaded in the uniform zone of the furnace with a stream of Ar. The weight loss of $ZnCl_2$ and $FeCl_2$ after holding was measured by changing the flow rate of Ar gas (10 sccm -230 sccm), and the partial pressures of $ZnCl_2$ and $FeCl_2$ were calculated. The partial pressures within a certain range were found to be independent of the flow rate of Ar at different temperatures. The vapor pressures were measured in the temperature range of 758-901K for $ZnCl_2$ and 963-983K for $FeCl_2$. The measured results agreed well with those in the literature.

• Korean Membrane Journal
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• 제4권1호
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• pp.25-35
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• 2002

The gas permeation properties have been studied on carbon molecular sieve (CMS) membranes prepared by pyrolysis of P84 polyimide under various conditions. P84 polyimide shows high permselectivities (O$_2$/N$_2$= 9.17 and CO$_2$/N$_2$= 35) for various gas pairs and has a good processibility because it is easily soluble in high polar solvents such as N-methylpyrrolidinone (NMP), dimethylformamide (DMF), and N,N-dimethylacetamide (DMAc). After pyrolysis under Ar flow, the change in the heating rate was found to affect the gas permeation properties to some extent. The permeabilities of the selected gases were shown to be in the order He ＞ CO$_2$＞ O$_2$＞ N$_2$for all the CMS membranes, whose order was in accordance with the order of kinetic gas diameters. It also revealed that the pyrolysis temperature considerably influenced the gas permeation properties of the CMS membranes derived from P84 polyimide. The CMS membranes pyrolized at 700$\^{C}$ temperature exhibited the highest permeability with relatively targe loss in permselectivity. This means that the pyrolysis temperature should be varied in accordance with target gases to be separated.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국재료학회지
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• 제9권5호
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.

• 한국터널지하공간학회 논문집
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• 제19권3호
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• pp.375-388
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• 2017

교통난 해소와 녹지공간의 확보를 위해서 도심지 소형차 전용 소단면 터널이 증가하는 추세이나 소단면 터널에 대한 방재시설 설치를 위한 기준은 미비한 실정이다. 이에 본 연구에서는 대배기구 방식을 적용한 소단면 터널에서 화재가 발생하는 경우 열환경 및 유해가스(CO)의 농도 특성을 고찰하기 위해 A86터널, 서울시에서 계획한 바 있는 U-Smartway터널, 서부간선터널을 모델로 하여 터널 단면적, 화재강도 및 배연풍량에 따른 화재시 터널내 온도 및 유해가스농도를 수치해석적인 방법으로 해석하고 비교 검토하였으며, 다음과 같은 결과를 얻었다. 터널 단면적이 감소하면 화원부의 온도는 증가하나 온도 상승률이 화재강도변화에 미치는 영향은 적다. 그러나 배연풍량 변화에 따라 큰 차이가 발생한다. 대배 기구 방식의 배연풍량으로 Q3+2.5Ar을 적용하는 경우, 화원부 온도는 서부간선터널($Ar=46.67m^2$)을 기준으로 하는 경우, A86($Ar=25.3m^2$)은 7.1배, U-smartway($Ar=37.32m^2$)는 5.4배가 증가하는 것으로 나타났다. 또한 화원부의 CO농도도 동일한 경향을 보이고 있으며, 서부간선터널 대비 A86터널은 10.7배 U-Smartway는 9.5배로 나타났다. 따라서 소단면 터널의 경우, 단면적감소에 따른 열환경 및 유해가스농도는 단면적 감소율 보다 상당히 크게 증가할 것으로 예상된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.284-284
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• 2011

Recently, the increasing degree of device integration in the fabrication of Si semiconductor devices, etching processes of nano-scale materials and high aspect-ratio (HAR) structures become more important. Due to this reason, etch selectivity control during etching of HAR contact holes and trenches is very important. In this study, The etch selectivity and etch rate of TEOS oxide layer using ACL (amorphous carbon layer) mask are investigated various process parameters in CH2F2/C4F8/O2/Ar plasma during etching TEOS oxide layer using ArF/BARC/SiOx/ACL multilevel resist (MLR) structures. The deformation and etch characteristics of TEOS oxide layer using ACL hard mask was investigated in a dual-frequency superimposed capacitively coupled plasma (DFS-CCP) etcher by different fHF/ fLF combinations by varying the CH2F2/ C4F8 gas flow ratio plasmas. The etch characteristics were measured by on scanning electron microscopy (SEM) And X-ray photoelectron spectroscopy (XPS) analyses and Fourier transform infrared spectroscopy (FT-IR). A process window for very high selective etching of TEOS oxide using ACL mask could be determined by controlling the process parameters and in turn degree of polymerization. Mechanisms for high etch selectivity will discussed in detail.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1428-1430
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• 1996

Thin Silicon oxynitride(SiON) films have been chemically deposited using 193nm ArF Excimer Laser CVD, with $Si_{2}H_{8}$, $N_{2}O$, and $NH_3$ as the reactive gases and $N_2$ as the carrier gas. Experimental results show that deposition rate and refractive index have a strong dependence on substrate temperature, chamber pressure, gas ratio, laser power and laser beam height. Electrical characterization of oxynitride films demonstrates that for $NH_{3}/N_{2}O$ flow ratios ranging from 0.25 to 1, the leakage currents, the interface trap density and the capacitances (dielect ric constant) increase and the dielectric breakdown fields decrease

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.83-88
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• 2004

Micro wires manufactured by the straightening progress are widely used in bio-medical and semi-conductor fields. In this study, we have developed a novel straightener which uses the direct heating method for straightening. In order to avoid the surface oxidization, during the heating process, we supplied the inert gas(Ar) and examined the effect of the gas flow rate. The effect of the tension and the current applied to the tungsten micro wires were thoroughly studied. From various experiments, it was found that when the tension is $500{\sim}600gf$ and the current is about 1.5A, we obtained higher straightness(${\approx}1{\mu}m/1000{\mu}m$) and roundness ($<{\pm}2{\mu}m/100{\mu}m$).