• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.248-251
• /
• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• 한국세라믹학회지
• /
• 제31권8호
• /
• pp.886-892
• /
• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• 한국전기전자재료학회논문지
• /
• 제20권9호
• /
• pp.816-820
• /
• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

• Journal of Photoscience
• /
• 제12권2호
• /
• pp.101-107
• /
• 2005

Infrared multiphoton dissociation of $CHCl_2F$ was studied using $CO_2$ laser excitation. Three products, $C_2Cl_2F_2$, $C_2ClF_3$, and $C_2HClF_2$, were identified by the analysis of the gas mixture from the photoreaction of $CHCl_2F$. The dependence of the reaction probability on added Ar gas pressure and excitation laser pulse energy was investigated. At low pressure (< 10 torr), the reaction probability increased as Ar pressure increased due to the rotational hole-filling effect, while it diminished with the increase of Ar pressure at high pressure (> > 20 torr) due to the collisional deactivation. The ratio of two products $(C_2ClF_3/C_2Cl_2F_2)$ decreased at low pressure (< 10 torr) and increased at high pressure (> 20 torr) with the increase of Ar pressure. The log-log plot of the reaction probability vs. laser pulse energy (${\\phi}$) was found to have a linear relationship, and its slope decreased as the added Ar pressure was increased. The reaction mechanisms for product formation have been suggested and validated by experimental evidences and considering the energetics. Fluorine-chlorine exchange reaction in the intermediate complex has been suggested to explain the formation of $C_2ClF_3$.

• 반도체디스플레이기술학회지
• /
• 제8권4호
• /
• pp.59-63
• /
• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• Journal of Advanced Marine Engineering and Technology
• /
• 제35권2호
• /
• pp.252-257
• /
• 2011

본 연구에서는 초경량성 마그네슘 재료를 엔진 블록, 실린더 헤드커버 등과 같은 박용기관에 적용하기 위한 환경 친화적 표면처리의 개발에 대하여 고찰하였다. 또한 이온플레이팅법에 의해 마그네슘 박막을 제작하고, 그 제작조건에 따라 변화하는 막의 결정배향성과 몰포로지가 경도특성에 미치는 영향을 해명하고자 하였다. 마그네슘 박막의 경도측정 결과, 아르곤 가스압의 증가에 따라 그 경도값이 상승하였 는데, 그 원인은 결정립계에 의한 강화와 성분 외 가스입자의 흡장효과에 의한 것으로 사료된다.

• Journal of Magnetics
• /
• 제15권3호
• /
• pp.132-137
• /
• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• Bulletin of the Korean Chemical Society
• /
• 제12권6호
• /
• pp.652-658
• /
• 1991

The effect of intermolecular collisions in the infrared multiphoton dissociation (IRMPD) of difluorochloromethane was investigated using He, Ar, and $N_2$ as buffer gases. The reaction probability for IRMPD of difluorochloromethane was measured as a function of laser fluence and the buffer gas pressure under unfocused beam geometry. It was observed that the reaction probability was initially enhanced with the increase of buffer gas pressure up to about 20 torr, but showed a decline at higher pressures. The reaction probability increases monotonically with the laser fluence, but the rate of increase diminishes at higher fluences. An attempt was made to simulate the experimental results by the method of energy grained master equation (EGME). From the parameters that fit the experimental data, the average energy loss per collision, $<{\Delta}E>_d$, was estimated for the He, Ar, and $N_2$ buffer gases.

• 한국재료학회지
• /
• 제12권1호
• /
• pp.68-74
• /
• 2002

The lead has to be removed for the recycling of copper alloy. The lead cannot be removed from the copper alloy by oxidation. It can be removed by the evaporation because of its high vapor pressure. However, rare information is found on removal of lead from copper alloy. The purpose of present work is to provide a fundamental knowledges on the removal of lead from the copper alloy by evaporation. Gas injection was made in molten copper alloy, and the evaporation rate of lead was measured. The influence of Ar gas flow rata(2~4 L/min), initial contents of lead(2~4wt%Pb), temperature(1200~140$0^{\circ}C$) was investigated based on the thermodynamic and the kinetics. The rate constant is increased with increasing flow rate of Ar and temperature. Though amount of lead removed is increased with higher initial lead concentration, the rate constant is not changed significantly. The activation energy is estimated from the temperature dependence of the rate constant. Also removal of lead from the copper by adding chloride was made for the comparison.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.387-390
• /
• 1999

Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn $SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.