• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.248-251
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• 2002

We measured the electron drift velocity, W, in 0.5% $SF_{6}$-Ar mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 8 Torr by the double shutter drift tube with a variable drift distance. This coefficient in the mixture was calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. And the measured and calculated values at different gas number density at each E/N was appreciable dependence in the results on the gas number density,

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.816-820
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• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.

• Journal of Photoscience
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• v.12 no.2
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• pp.101-107
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• 2005

Infrared multiphoton dissociation of $CHCl_2F$ was studied using $CO_2$ laser excitation. Three products, $C_2Cl_2F_2$, $C_2ClF_3$, and $C_2HClF_2$, were identified by the analysis of the gas mixture from the photoreaction of $CHCl_2F$. The dependence of the reaction probability on added Ar gas pressure and excitation laser pulse energy was investigated. At low pressure (< 10 torr), the reaction probability increased as Ar pressure increased due to the rotational hole-filling effect, while it diminished with the increase of Ar pressure at high pressure (> > 20 torr) due to the collisional deactivation. The ratio of two products $(C_2ClF_3/C_2Cl_2F_2)$ decreased at low pressure (< 10 torr) and increased at high pressure (> 20 torr) with the increase of Ar pressure. The log-log plot of the reaction probability vs. laser pulse energy (${\\phi}$) was found to have a linear relationship, and its slope decreased as the added Ar pressure was increased. The reaction mechanisms for product formation have been suggested and validated by experimental evidences and considering the energetics. Fluorine-chlorine exchange reaction in the intermediate complex has been suggested to explain the formation of $C_2ClF_3$.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.2
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• pp.252-257
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• 2011

Magnesium thin films for marine engine parts such as the engine block and the cylinder head cover etc. were prepared on the magnesium alloy(AZ91D) substrate by Thermo-electron activated Ion-plating method. The influence of gas pressure and substrate bias voltages on the crystal orientation and morphology of the films was investigated with X-ray diffraction and field emission scanning electron microscope(FE-SEM), respectively. Moreover, the effect of crystal orientation and morphology of the magnesium films on the its hardness property was investigated as well. From the results, the hardness of the films was increased in Ar gas pressure due to the grain boundary strengthening and occlusion effects.

• Journal of Magnetics
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• v.15 no.3
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.652-658
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• 1991

The effect of intermolecular collisions in the infrared multiphoton dissociation (IRMPD) of difluorochloromethane was investigated using He, Ar, and $N_2$ as buffer gases. The reaction probability for IRMPD of difluorochloromethane was measured as a function of laser fluence and the buffer gas pressure under unfocused beam geometry. It was observed that the reaction probability was initially enhanced with the increase of buffer gas pressure up to about 20 torr, but showed a decline at higher pressures. The reaction probability increases monotonically with the laser fluence, but the rate of increase diminishes at higher fluences. An attempt was made to simulate the experimental results by the method of energy grained master equation (EGME). From the parameters that fit the experimental data, the average energy loss per collision, $<{\Delta}E>_d$, was estimated for the He, Ar, and $N_2$ buffer gases.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.68-74
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• 2002

The lead has to be removed for the recycling of copper alloy. The lead cannot be removed from the copper alloy by oxidation. It can be removed by the evaporation because of its high vapor pressure. However, rare information is found on removal of lead from copper alloy. The purpose of present work is to provide a fundamental knowledges on the removal of lead from the copper alloy by evaporation. Gas injection was made in molten copper alloy, and the evaporation rate of lead was measured. The influence of Ar gas flow rata(2~4 L/min), initial contents of lead(2~4wt%Pb), temperature(1200~140$0^{\circ}C$) was investigated based on the thermodynamic and the kinetics. The rate constant is increased with increasing flow rate of Ar and temperature. Though amount of lead removed is increased with higher initial lead concentration, the rate constant is not changed significantly. The activation energy is estimated from the temperature dependence of the rate constant. Also removal of lead from the copper by adding chloride was made for the comparison.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.387-390
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• 1999

Electron swarm parameterdthe drift velocity and longitudinal diffusion coefficienthn $SiH_4-Ar$ mixtures containing 0.5% and 5% monosilane were measured using over the range of E/N from 0.01 to 300 Td at room temperature. Electron swarm parameters in argon were drastically changed by adding a small amount of monosilane. The electron drift velocity in both mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tern approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.