• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.447-447
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• 2010

일찍이 $SiO_2$ (Silicon dioxide) 박막은 다양한 분야에서 유전층, 부식 방지층, passivation층 등의 역할을 해왔다. 그리고 이러한 박막 공정은 대부분 진공의 환경에서 그 공정이 이루어지고 있다. 하지만 이러한 진공 system은 chamber, loadlock 그리고 펌프 등의 다양한 진공장비로 인한 생산 비용 증가, 공정의 복잡성뿐만 아니라 공정의 대면적화에 어려움을 지니고 있다. 그리고 최근 flexible display의 제조 공정에서 polymer 혹은 plastic 기판을 제조 공정에 적용시키기 위해 저온 공정이 필수적으로 요구 되고 있다. 이러한 기술적 한계를 뛰어 넘기 위해 최근 많은 연구가들은 atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD)에 대해 지속적으로 다양한 연구를 하고 있다. 본 연구에서는 remote-type의 modified pin-to-plate dielectric barrier discharge (DBD) 시스템을 이용한 $SiO_2$ 무기 박막 증착에 관해 연구하였다. $O_2$/He/Ar의 gas와 5 kV AC power (30 kHz)의 전원장치를 통해 고밀도 대기압 플라즈마를 발생시켰고, silicon precursor로는 hexamethyldisilazane (HMSD)를 사용하였다. 먼저 HMDS와 $O_2$ gas의 flow rate 변화에 따른 증착률을 조사하였고 그 다음으로 박막의 조성 및 표면 특성을 조사하였다. HMDS의 유량이 100 ~ 300 sccm으로 증가함에 따라 증착속도는 증가했다. 하지만 FT-IR을 통해 HMDS의 유량이 증가하면 반응에 참여할 산소 분자의 부족으로 인해 $-(CH_3)_X$의 peak intensity가 증가하고, -OH의 peak intensity가 점차 감소함을 관찰 할 수 있었다. 또한 증착된 박막의 표면에 particle과 불균일한 surface morphology 등을 SEM image를 통해 관찰 하였다. 산소 유량이 탄소와 관련된 많은 불순물들의 제거에 도움이 됨에도 불구하고 14 slm 이상의 산소가 반응기 내로 주입되게 되면 대기압 플라즈마의 discharge가 불안정하게 되어 공정효율을 저하시키는 요소가 되었다. 결과적으로 HMDS (150 sccm)/$O_2$ (14 slm)/He (5 slm)/Ar (3 slm)의 조건에서 약 42.7 nm/min 증착률을 가지며, 불순물이 적고 surface morphology가 깨끗한 $SiO_2$ 박막을 증착할 수 있었다.

• Polymer(Korea)
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• v.36 no.1
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• pp.65-70
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• 2012

Glycidyl methacrylate (GMA) was used to introduce epoxy groups on the surface of polypropylene (PP) plate, used as a substrate, through plasma-induced graft copolymerization. Emulsion polymerization was applied for graft copolymerization of GMA and was compared with conventional solution polymerization to confirm its effect. Plasma treatment conditions under one atmospheric pressure were fixed as follows; the RF power of 200 W, the treatment time of 30 sec, the Ar gas flow rate of 6 LPM, and the exposure time of treated PP samples in air of 5 min. For graft-copolymerization, GMA concentration, reaction temperature, and reaction time was optimized to maximize the grafting degree of GMA. The maximum grafting degree of GMA was obtained at the condition of 12%-GMA concentration, $90^{\circ}C$ reaction temperature, and 5 hr-reaction time. Analysis results supported that the emulsion polymerization was more effective than the solution polymerization for grafting more GMAs on the surface of PP plate under the same reaction conditions.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.67-70
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• 2022

In order to prevent water vapor and oxygen permeation in the organic light emitting diodes (OLED), Al₂O₃ thin-film encapsulation (TFE) technology were investigated. Atomic layer deposition (ALD) method was used for making the Al₂O₃ TFE layer because it has superior barrier performance with advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the thickness of the Al₂O₃ layer was varied by controlling the numbers of the unit pulse cycle including Tri Methyl Aluminum(Al(CH₃)₃) injection, Ar purge, and H₂O injection. In this case, several process parameters such as injection pulse times, Ar flow rate, precursor temperature, and substrate temperatures were fixed for analysis of the effect only on the thickness of the Al₂O₃ layer. As results, at least the thickness of 39 nm was required in order to obtain the minimum WVTR of 9.04 mg/m²day per one Al₂O₃ layer and a good transmittance of 90.94 % at 550 nm wavelength.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.11
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• pp.1535-1539
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• 2000

A sonic nozzle is used as a reference flow meter in the area of gas flow rate measurement. The critical pressure ratio of sonic nozzle is an important factor in maintaining its operating condition. ISO9300 suggested the critical pressure ratio of sonic nozzle as a function of area ratio. In this study, 13 sonic nozzles were made by the design of ISC9300 with different half diffuser angles of 2。 to 8。 and throat diameters of 0.28 to 4.48 mm. The test results of half diffuser angles below 8。 ar quite similar to those of ISO9300. On the other hand, the critical pressure ratio for the nozzle of 8。 decreases by 5.5% in comparison with ISO9300. However, ISO9300 does not predict the critical pressure ratio at lower Reynolds numbers than 10(sup)5. Therefore, it is found that it is a better way for the flow of low Reynolds number to express the critical pressure ratio of sonic nozzle as a function of Reynolds number than area ratios. A correlation equation of critical pressure is introduced with uncertainty $\pm$3.2 % at 95% confidence level.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.2
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• pp.94-100
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• 2013

A convergent-divergent nozzle or venturi nozzle has been used to accelerate the wind speed at its throat. The wind speed at the throat is inversely proportional to its area according to the continuity equation. In this numerical study, an airflow phenomena in the venturi system placed at a vertical structure was investigated to understand the vortex effect occurred at the rear-side of the vertical structure on the air speed increment at the throat of the venturi system. For this study, a venturi system sized by $20(m){\times}20(m){\times}6(m)$ was modelled and the area ratio(AR) of the model venturi was 2.86. To see the vortex effect on the air flow acceleration in the venturi throat, two different boundary conditions was defined From the study, it was found that the pressure coefficient(CP) of the venturi system with the vortex formed at the exit of the venturi was about 2.5times of the CP of the venturi system without the vortex effect. The velocity increment rate of the venturi system with the vortex was 61% but 9.5% only at the venturi system without the vortex. Conclusively, it can be said that the venturi system installed in a vertical structure has very positive effect on the flow acceleration at its throat due to the vortex formed at the rear-side of the vertical structure.

• KEPCO Journal on Electric Power and Energy
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• v.5 no.3
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• pp.173-179
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• 2019

Cryogenic air separation unit produces various gases such as $N_2$, $O_2$, and Ar by liquefying air. The process also varies with diverse production conditions. The one for SNG production among them has lower efficiency compared to other air separation unit because it requires ultrapure $O_2$ with purity not lower than 99.5%. Among factors that reduce the efficiency of air separation unit, power consumption due to compress air and heat duty of double column were representatives. In this study, simulation of the air separation unit for SNG production was carry out by using ASEPN PLUS. In the results of the simulation, 18.21 kg/s of at least 99.5% pure $O_2$ was produced and 33.26 MW of power was consumed. To improve the energy efficiency of air separation unit for SNG production, the sensitivity analysis for power consumption, purities and flow rate of $N_2$, $O_2$ production in the air separation unit was performed by change of air boosting ratios. The simulated model has three types of air with different pressure levels and two air boosting ratio. The air boosting ratio means flow rate ratio of air by recompressing in the process. As increasing the first air boosting ratio, $N_2$ flow rate which has purity of 99.9 mol% over increase and $O_2$ flow rate and purity decrease. As increasing the second air boosting ratio, $N_2$ flow rate which has purity of 99.9 mol% over decreases and $O_2$ flow rate increases but the purity of $O_2$ decreases. In addition, power consumption of compressing to increase in the two cases but results of heat duty in double column were different. The heat duty in double column decreases as increasing the first air boosting ratio but increases as increasing the second air boosting ratio. According to the results of the sensitivity analysis, the optimum air boosting ratios were 0.48 and 0.50 respectively and after adjusting the air boosting ratios, power consumption decreased by approximately 7% from $0.51kWh/O_2kg$ to $0.47kWh/O_2kg$.

• Journal of the Korean Chemical Society
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• v.54 no.6
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• pp.696-700
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• 2010

Yeast is immobilized upon $100{\mu}m$ CPG(controlled pore glass bead) to separate $Sb^{3+}$ and $Sb^{5+}$. Continuous hydride generation is performed after the bio-column. The optimum conditions are 0.8 M nitric acid as an eluent with the flow rate of 1.0 mL $min^{-1}$ and the optimum conditions for the generation of hydride are 2 M HCl, 3% (w/v) $NaBH_4$ with the flow rate of 0.83 mL $min^{-1}$, Ar carrier gas flow rate of 50 mL $min^{-1}$. Two species are separated at 112 and 354 seconds each. The sensitivity is enhanced by 10 times for $200{\mu}L$ of sample and the detection limits are 3.0 ppb and 7.0 ppb for $Sb^{3+}$ and $Sb^{5+}$, respectively. When compared with the standard samples, this method showed accurate results.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.12
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• pp.1047-1053
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• 2016

In this study, welding of pure titanium was carried out by using a continuous wave fiber laser with a maximum output of 6.3 kW. Because brittle regions form easily in titanium as a result of oxidation or nitriding, the weld must be protected from the atmosphere by using an appropriate shielding gas. Experiments were performed by changing the type and the flow rate of shielding gases to obtain the optimal shielding condition, and the weldability was then evaluated. The degree of oxidation and nitriding was distinguished by observing the color of beads, and weld microstructure was observed by using an optical microscope and a scanning electron microscope. The mechanical properties of the weld were examined by measuring hardness. When the weld was oxidized or nitrified, the bead color was gray or yellow, and the oxygen or nitrogen content in the bead surface and overall weld tended to be high, as a result of which the hardness of the weld was thrice that of the base metal. A sound silvery white bead was obtained by using Ar as the shielding gas.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.47-53
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• 2014

Three kinds of crystalline silicon have been used for the solar cell grade. First of all, single crystalline silicon is the main subject to enhance the production yield. Most of the efforts are focused on the control of the melt-crystal interface shape affected by the crystal-crucible rotation rate. The main subject in the multi-crystalline silicon ingot is the contamination control. Faster Ar gas flow above the melt surface will lower the carbon contamination in the crystal. And also, twin boundary electrically inactive is found to be more effective than grain boundary for the improvement of the MCLT. In the case of mono-like silicon material, propagation of the multi-crystalline silicon growing from the inner side crucible is the problem lowering the portion of the single crystalline part at the center of the ingot. Crystal growing apparatus giving higher cooling rate at the bottom and lower cooling rate at the side crucible was suggested as the optimum solution obtaining higher quality of the mono-like silicon ingot. Proper application of the seeds at the bottom of the crucible would be one of the solutions.