• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.135-136
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• 2009

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2$ in $BCl_3/Ar/Cl_2$ plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $BCl_3$(16 sccm)/Ar(4 sccm)/$Cl_2$(3 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data, the suggestions on the ZnO etch mechanism were made.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 공업화학
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• 제10권4호
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• pp.502-508
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• 1999

서로 다른 기공크기를 가진 $Al_2O_3$막을 기질로 사용하여 단량체인 $CHF_3$로 플라즈마 중합시키고, 플라즈마 중합된 막을 Ar 플라즈마로 처리하여 표면을 개질시켜 $O_2/N_2$에 대한 투과도와 선택도를 비교하여 그 특성을 검토하고 기질의 기공크기가 투과메카니즘에 미치는 영향을 살펴보았다. 중합된 고분자 막을 cathode에 근접한 위치에서 Ar 플라즈마의 처리 시간과 rf-power 출력에 따라 표면 처리하였을 때 질소에 대한 산소의 선택도는 크게 향상된, 반면 투과도는 저하됨을 확인하였다. 또한 동일한 증착조건에서 서로 다른 기공크기를 갖는 기질에 플라즈마 중합시켰을 때, 증착된 비 다공성막인 고분자막에서는 동일하게 용해-확산 모델이 적용되나, 비 다공성층을 통과한 분자들은 Knudsen 확산모델에 의해 기질의 크기와 투과도와의 상관관계를 나타냈으며, 이로부터 투과메카니즘은 중합된 고분자막의 기능기와 기질의 기공크기에 지배적인 영향을 받음을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• 대한화학회지
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• 제46권2호
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• pp.164-168
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• 2002

$SrGa_2S_4$:Eu는 녹색을 발광하는 형광체로 전계 방출 디스플레이, 음극선 발광 분야에 널리 응용되고 있다. 일반적으로 $SrGa_2S_4$:Eu의 합성은 $SrCO_3$,$Ga_2O_3$, 그리고 $Eu_2O_3$를 $H_2S$ 와 Ar 가스를 흘려주면서 고온에서 소송하는 고상반응법으로 합성하였다. 본 연구에서는 SrS, Eu 착물, 그리고 Ga 착물의 분해 반응을 통해서 $SrGa_2S_4$:Eu 형광체를 합성하였다. 이 방법의 장점은 Ar 가스 뿐 만 아니라 독성의 $H_2S$를 사용하지 않는 것이다. $SrGa_2S_4$:Eu 형광체의 합성 조건과 발광 특성을 검토하였다.

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.34-41
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• 2017

A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has $TE_{10}-TEM$ waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, $Ar/CH_4$ gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform $Ar/CH_4$ plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at $Ar:CH_4=25:25$ sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from $43.9^{\circ}$ to $93.2^{\circ}$.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.319-324
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• 2002

In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• 한국재료학회지
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• 제4권7호
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• pp.783-791
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• 1994

rf 마그네트론 스퍼터링법을 이용하여 7059 유리기판 위에 ZnO압전박막을 증착하고, 공정변수인 rf 인가전력, 반응기 압력, $O_{2}$/Ar의 조성비등이 증착되는 박막의 결정성 및 전기적 특성에 미치는 영향을 고찰하였다. 증착된 ZnO박막은 문헌에 보고된 증착속도보다 높은 값(200-1000$\AA$/min)을 가졌으며, XRD(002)피크의 rocking curve 표준편차가 SAW 필터로의 응용이 가능한 $6^{\circ}$미만의 값을 가졌다. $O_{2}$Ar 유입비가 25%이상의 경우에는 매우 높은 저항치를 가짐을 알 수 있었다. ZnO박막의 두께와 파장의 비, $\frac{h}{\lambda}$=0.25인 조건에서 필터를 제조하였다. 측정한 주파수 응답특성과 이론치에 의해 계산한 주파수응답특성은 비교적 잘 일치함을 알 수 있었다. 이때 중심주파수는 39.08MHz였으며, 상속도는 \ulcorner 2501m/sec, 삽입손실은 약 29dB였다.