• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.21-24
• /
• 2000

Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
• /
• pp.2163-2165
• /
• 2005

A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

• Bulletin of the Korean Chemical Society
• /
• 제15권8호
• /
• pp.663-669
• /
• 1994

Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

• 한국표면공학회지
• /
• 제55권6호
• /
• pp.376-382
• /
• 2022

Yb₂Si₂O₇ has a coefficient of thermal expansion similar to that of the base material of SiC and has excellent corrosion resistance in a high-temperature oxidizing atmosphere including water vapor, so it is being studied as one of the materials for environmental barrier coatings (EBCs). In this study, Yb₂Si₂O₇ powder granule is deposited using atmospheric plasma spraying (APS) with different Ar/He ratios. Phase formation and microstructural characteristics are investigated with the coated specimens. In the coating layer, the crystallinity decreased, and the amorphous content increased from an increase in the ratio of Ar. In addition, the various types of particles involved by local volatilization of Si according to the Ar/He ratios were identified.

• 한국분무공학회지
• /
• 제4권2호
• /
• pp.40-46
• /
• 1999

Experimental investigation of unsteady impinging diesel spray on the flat plate have been carried out using high speed camera and Malvern system. The density ratios of ambient gas to diesel fuel were varied using $N_2$ and Ar gas in the case of 14.9, 21.2, 28.4, 35.1, 40.4, and 50.1. With the increase of gas density ratio, the radial penetration is decreased due to the resistance of the ambient gas. With the increase of the gas density ratio and the distance between nozzle tip and flat plate, the height of spray is increased due to the entrance and circulation. With the increase of gas density ratio, SMD is decreased on the nearby position at the center of flat plate, but SMD is increased on the far position. As the distance between nozzle tip and flat plate is increased, SMD is always decreased.

• 한국전기전자재료학회논문지
• /
• 제19권5호
• /
• pp.405-410
• /
• 2006

We fabricated gas sensors using carbon nanotubes (CNTs) as electron emitters for the purpose of detecting inert gases. By using the silicon-glass anodic bonding and glass patterning technologies with the typical Si process, we improved the compactness of the sensors and the reliability in process. The proposed sensor, based on, an electrical discharge theory known as Paschen's law in principle, works by figuring the variation of the discharge current depending on gas concentration. In the experiment, the initial breakdown characteristics were measured for air and Ar as a function of gas pressure. As the result, even though it should be realized that there are many other factors which have an effect on the breakdown of a gap, the sensors led to similar result as predicted by Paschen's law, and they showed a possibility as gas sensors which enable to detect the gas density ranged to the vacuum pressure from 1 to $10^{-3}$ Torr.

• 분석과학
• /
• 제12권2호
• /
• pp.94-98
• /
• 1999

Quadrupole Mass Spectrometer를 이용하여 핵연료봉으로부터 포집된 1기업이하 소량의 기체들로부터 그들의 조성과 동위원소비를 구하는 방법을 검토하였다. He, $N_2$, $O_2$, Ar, Kr, Xe의 개별기체와 혼합기체를 이용하여 기체압력과 조성비에 따른 검정곡선의 직선성을 조사하였다. Sample chamber와 analyser chamber 사이에 부착된 molecular leak의 영향을 조사하였으며, 시료와 유사한 조성을 갖는 혼합표준기체로부터 각 기체의 감도를 얻은 후 동일조건에서 시료를 분석하였다. 측정압력 범위에서 Kr과 Xe의 동위원소간 감도차는 크게 나타나지 않았다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1433-1435
• /
• 1997

ZnO shows the properties of wide conductivity variation, high optical transmittance, and excellent piezoelectricity. Using these properties of ZnO, the material applications were extended to sensors, SAW filters, solar cells, and display devices. This paper investigated transmittance influencing factors for thin film ZnO grown by RF magnetron sputtering. The growth rate and structural investigation were carried out in conjunction with optical transmittance characteristics of thin film ZnO. The glass substrate temperature of $175^{\circ}C$ exhibited a preferential crystallization along (002) orientation. Transmittance of ZnO film deposited at the substrate temperature of $175^{\circ}C$ showed higher than 92%. An active sputter gas was investigated with a variation of $O_2$ partial pressure from 0 to 10% in an Ar atmosphere. ZnO film grown in 100% Ar gas shows that a reduced transmittance of 82% at the short wavelengths and decreased resistivity value. As the partial pressure of $O_2$ gas increased, the optical transmittance was increased above 90% at the short wavelengths, however, resistivity was drastically increased to higher than $10^4{\Omega}$-cm.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.759-762
• /
• 2010

In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.

• 한국항공우주학회지
• /
• 제33권12호
• /
• pp.68-75
• /
• 2005

주유동 기체의 물리적 특성이 초음속 이젝터 성능에 미치는 영향에 관한 연구를 수행하였다. 기체의 분자량과 정압 비열 변화에 따른 성능 변화에 관한 연구는 축대칭 환형 분사 초음속 이젝터를 사용하였다. 주유동 기체로는 공기, $CO_{2}$, Ar, $C_{3}H_{8}$, $CCl_{2}F_{2}$를 사용하였다. 주유동 기체의 분자량과 정압 비열이 증가함에 따라 일정 주유동 압력에 대한 부유동 압력은 증가하였고 이러한 경향은 몰비열이나 비열비의 형태로 통합되어 확인되었다.