• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.727-732
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• 2008

In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• 한국결정성장학회지
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• 제13권2호
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• pp.79-82
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• 2003

ArF(193nm) 엑시머 레이저를 이용한 펄스레이저증착법(PLD)에 의해 GaN 소결체를 타겟 재료로 하여 $SiO_2$기판위에 GaN nanoparticles를 합성하였다. PLD 공정 중에는 100Pa, 50Pa, 10Pa및 1 Pa의 Ar gas 압력과 100mJ 및 200mJ의 레이저 에너지를 가하였다. 합성된 GaN nanoparticles는 XRD, SEM, TEM, XPS 및 optical absorption spectra 등에 의해 분석되었다. 합성된 GaN nanoparticles는 대체적으로 20~30nm의 입경을 갖는 균일한 분포를 하고 있었다. 또한, Ar 기체 압력이 낮아짐에 따라 합성된 GaN nanoparticles의 stoichiometry가 향상되고 optical band edge가 blueshift 경향을 나타내었다.

• 한국식품저장유통학회지
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• 제21권2호
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• pp.163-169
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• 2014

본 연구에서는 argon 가스포장과 기존의 갈변저해물질 중 그 효과가 입증된 ascorbic acid와 저온 blanching 처리 등의 병용처리를 통해 신선편이 감자의 저장 중 품질에 미치는 효과에 대하여 조사하였다. 감자는 박피 후 cube 형태($1.5{\times}1.5{\times}1.5$ cm)로 절단하여 증류수에 1분간 세척 후 물기를 제거하여 argon 가스포장(AR), 1% ascorbic acid에 1분간 침지(AA), 1% ascorbic acid에 1분간 침지 후 argon 가스포장(AAR), $35^{\circ}C$에서 30분간 blanching처리(BA), $35^{\circ}C$ 에서 30분간 blanching처리 후 argon 가스포장(BAR), 아무 처리도 하지 않은 것을 대조구(Cont)로 하여 OPP film에 열접합 포장 후 $5^{\circ}C$에 저장하였다. Cont, AA, BA구의 $O_2$ 농도는 저장기간이 지남에 따라 감소하였으나, argon 가스 포장처리구인 AR, AAR, BAR구에서 $O_2$ 농도는 저장기간이 지남에 따라 조금씩 증가하였다. $CO_2$ 농도는 저장기간이 지남에 따라 모두 증가하였다. 색도 분석 결과 argon 가스포장한 AR, AAR, BAR구에서 Cont, AA, BL구에 비해 높은 $L^*$값과 낮은 갈변도 값을 나타내었으며, 총균수를 분석한 결과 Cont구에서 눈에 띄게 높은 총균수를 나타내었고, argon 가스포장처리구인 AR, AAR, BAR구에서 AA, BL구보다 비교적 낮은 총균수를 나타내어 argon 가스포장이 항갈변 뿐만 아니라 호기성미생물의 생육 저해에 효과가 있음을 알 수 있었다. Polyphenol oxidase(PPO) 활성은 Cont 구에서 눈에 띄게 높은 PPO 활성을 나타내었고 AR처리구에서 가장 낮은 PPO 활성을 나타내었다. DPPH 라디칼 소거능을 이용하여 항산화 활성을 분석해 본 결과 AA, AAR구에서 눈에 띄게 높은 항산화 활성을 나타내었으며, 나머지 구간에는 큰 차이가 없었다. 따라서 argon 가스포장과 병용처리는 신선편이 감자의 갈변 저해, PPO 활성 저해, 항균 효과 등 품질저하를 방지하는데 효과가 있는 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.192-192
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• 2009

AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1997년도 추계학술대회 논문집
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• pp.37-42
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• 1997

This paper describes result of experiment of parameters affecting the micro hole drilling time, kind of assisting gas and it's pressure. The result reveals that parameter value of 0.08J, 20Hz, dwell time of 300 microseconds can be a good machining condition to make micro hole diameter range of 50-70${\mu}{\textrm}{m}$, Assistant gas such air, O2, Ar, N2 was adapted. Assistant gas of air makes heat affected zone enlarge due to burning of material, also it makes hole irregular and damage because of refusion stick to caused by chemical reaction with Al2O3 ceramic material. O2(99.9%) has good characteristic to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$, but it is expensive. Ar, N2 makes material burn and crack severely and proved to be an appropriate but, Ar was better than N2.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.384-384
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• 2010

The surface reaction characteristics of Zinc Oxide (ZnO) in $Cl_2/BCl_3$/Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2$(3 sccm)/$BCl_3$(16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS).

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 춘계학술발표대회 개요집
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• pp.346-348
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• 2005

TIG welding can produce high quality of weld, but has the disadvantage of low productivity and high possibility of lack-of-fusion especially on heavy wall groove welding. In order to overcome such demerits of TIG welding, the hot-wire method which provides pre-heated wire and the use of He-Ar mixture gas as shielding gas were adopted. Through this study, both methods were turned out to be beneficial to the prevention of lack-of-fusion and the increase of productivity and welding speed.

• Mass Spectrometry Letters
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• 제10권1호
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• pp.27-31
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• 2019

In this article, the properties of ${CO_2}^+(CO_2)_n$ clusters in a Paul ion trap have been investigated using mass-selective instability mode which conducted by chosen precursor ions, mainly $Ar^+$ and ${CO_2}^+$ produced by a mixture of Ar and $CO_2$. Exposure of ${CO_2}^+$ ions to $CO_2$ molecules, lead to the formation of ${CO_2}^+(CO_2)_n$ clusters. Here, Ar gas react as a buffer gas and lead to form ${CO_2}^+(CO_2)_n$ cluster by collisional effect.

• 한국생산제조학회지
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• 제8권5호
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• pp.115-120
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• 1999

This research is a described result of experimental for the parameter's effecting the microhole machining by Nd-Yag laser, The parameters are energy, pulse interval time a kin of assisting gas and its pressure. The result reveals that parameter value of energy 0.08J, pulse 20Hz, interval time of 300 microseconds could be a good machining condition to make upper microhoel that is the diameter range of 50-70${\mu}{\textrm}{m}$. At tat time the assistant gas such air, $O_2$, Ar $N_2$, was appelied. Assistant gas of air makes heat affected zone enlarge due to burning of material surface. Also it makes microhole irregular and damageable. Because of refusion caused by chemical reaction with $Al_2O_3$ ceramic material . The $O_2$(99.9%) has good characteristics to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$ but it is expensive. Ar, $N_2$ make material crack and burnning and proved that to be unappropriate but, Ar was a better than $N_2$.